Obsolete Product(s) - Obsolete Product(s)
BTA04 T/D/S/A BTB04 T/D/S/A
2/6
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 60 °C/W
Rth (j-c) DC Junction to case for DC BTA 4.4 °C/W
BTB 3.2
Rth (j-c) AC Junction to case for 360° conduction angle (F = 50Hz) BTA 3.3 °C/W
BTB 2.4
GATE CHARACTERISTICS (maximum values)
P
G(AV)
=1W P
GM
= 40W (tp = 20µs) I
GM
= 4A (tp = 20µs) V
GM
= 16V (tp = 20µs)
THERMAL RESISTANCE
Symbol Test conditions Quadrant
BTA / BTB04
Unit
TDSA
I
GT
V
D
= 12V (DC) R
L
=33Ω Tj = 25°C I - II - III MAX. 5 5 10 10 mA
IV MAX. 5 10 10 25
V
GT
V
D
= 12V (DC) R
L
=33Ω Tj = 25°C I - II - III - IV MAX. 1.5 V
V
GD
V
D
=V
DRM
R
L
= 3.3kΩ Tj =110°C I - II - III - IV MIN. 0.2 V
tgt V
D
=V
DRM
I
G
= 40mA
dI
G
/dt = 0.5A/µs
Tj = 25°C I - II - III - IV TYP. 2 µs
I
L
I
G
= 1.2I
GT
Tj = 25°C I - III - IV TYP. 10 10 20 20 mA
II 20 20 40 40
I
H
*I
T
= 100mA Gate open Tj = 25°C MAX. 15 15 25 25 mA
V
TM
*I
TM
= 5.5A tp = 380µs Tj = 25°C MAX. 1.65 V
I
DRM
I
RRM
V
DRM
rated
V
RRM
rated
Tj = 25°C MAX. 0.01 mA
Tj = 110°C MAX. 0.75
dV/dt * Linear slope up to
V
D
= 67% V
DRM
gate open
Tj = 110°C TYP. 10 10 - - V/µs
MIN. - - 10 10
(dI/dt)c* (dI/dt)c = 1.8A/ms Tj = 110°C TYP. 1 1 5 5 V/µs
* For either polarity of electrode A
2
voltage with reference to electrode A
1
ELECTRICAL CHARACTERISTICS