OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

PXT2222A,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
NXP Semiconductors
PXT2222A
NPN switching transistors
PXT2222A All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 2 April 2014 6 / 15
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
CB
= 60 V; I
E
= 0 A; T
amb
= 25 °C - - 10 nAI
CBO
collector-base cut-off
current
V
CB
= 60 V; I
E
= 0 A; T
j
= 125 °C - - 10 µA
I
EBO
emitter-base cut-off
current
V
EB
= 5 V; I
C
= 0 A; T
amb
= 25 °C - - 10 nA
V
CE
= 10 V; I
C
= 0.1 mA; T
amb
= 25 °C 35 - -
V
CE
= 10 V; I
C
= 1 mA; T
amb
= 25 °C 50 - -
V
CE
= 10 V; I
C
= 10 mA; T
amb
= 25 °C 75 - -
V
CE
= 10 V; I
C
= 10 mA; T
j
= -55 °C 35 - -
V
CE
= 1 V; I
C
= 150 mA; t
p
≤ 300 µs;
δ ≤ 0.02; T
amb
= 25 °C; pulsed
50 - -
V
CE
= 10 V; I
C
= 150 mA; t
p
≤ 300 µs;
δ ≤ 0.02; T
amb
= 25 °C; pulsed
100 - 300
h
FE
DC current gain
V
CE
= 10 V; I
C
= 500 mA; t
p
≤ 300 µs;
δ ≤ 0.02; T
amb
= 25 °C; pulsed
40 - -
I
C
= 150 mA; I
B
= 15 mA; T
amb
= 25 °C - - 300 mVV
CEsat
collector-emitter
saturation voltage
I
C
= 500 mA; I
B
= 50 mA; T
amb
= 25 °C - - 1 V
I
C
= 150 mA; I
B
= 15 mA; T
amb
= 25 °C 0.6 - 1.2 VV
BEsat
base-emitter saturation
voltage
I
C
= 500 mA; I
B
= 50 mA; T
amb
= 25 °C - - 2 V
t
d
delay time - - 15 ns
t
r
rise time - - 20 ns
t
on
turn-on time - - 35 ns
t
s
storage time - - 200 ns
t
f
fall time - - 60 ns
t
off
turn-off time
I
C
= 150 mA; I
Bon
= 15 mA;
I
Boff
= -15 mA; T
amb
= 25 °C
- - 250 ns
C
C
collector capacitance V
CB
= 10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
- - 8 pF
C
E
emitter capacitance V
EB
= 500 mV; I
C
= 0 A; i
c
= 0 A;
f = 1 MHz; T
amb
= 25 °C
- - 25 pF
f
T
transition frequency V
CE
= 10 V; I
C
= 20 mA; f = 100 MHz;
T
amb
= 25 °C
300 - - MHz
NF noise figure V
CE
= 5 V; I
C
= 200 µA; R
S
= 2 kΩ;
f = 1 kHz; B = 200 Hz; T
amb
= 25 °C
- - 4 dB
NXP Semiconductors
PXT2222A
NPN switching transistors
PXT2222A All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 2 April 2014 7 / 15
aaa-011462
200
400
600
h
FE
0
I
C
(mA)
10
-1
10
3
10
2
1 10
(1)
(2)
(3)
V
CE
= 10 V
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 5. DC current gain as a function of collector
current; typical values
V
CE
(V)
0 1084 62
aaa-011463
0.4
0.2
0.6
0.8
I
C
(A)
0
I
B
= 13 mA
1.3
2.6
3.9
5.2
6.5
7.8
9.1
11.7
10.4
T
amb
= 25 °C
Fig. 6. Collector current as a function of collector-
emitter voltage; typical values
aaa-011464
0.4
0.8
1.2
V
BE
(V)
0
I
C
(mA)
10
-1
10
3
10
2
1 10
(1)
(2)
(3)
V
CE
= 1 V
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 150 °C
Fig. 7. Base-emitter voltage as a function of collector
current; typical values
aaa-011465
0.6
0.8
0.4
1.0
1.2
V
BEsat
(V)
0.2
I
C
(mA)
10
-1
10
3
10
2
1 10
(1)
(2)
(3)
I
C
/I
B
= 10
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 150 °C
Fig. 8. Base-emitter saturation voltage as a function of
collector current; typical values
NXP Semiconductors
PXT2222A
NPN switching transistors
PXT2222A All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 2 April 2014 8 / 15
aaa-011466
I
C
(mA)
10
-1
10
3
10
2
1 10
10
-1
1
V
CEsat
(V)
10
-2
(1)
(2)
(3)
I
C
/I
B
= 10
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 9. Collector-emitter saturation voltage as a function of collector current; typical values
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

PXT2222A,115

Mfr. #:
Buy PXT2222A,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT NPN SW 40V 100MA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet