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RCLAMP2451ZATFT

P1-P3P4-P6P7-P8
RClamp2451ZA
Final Datasheet Rev 3.1
Revision Date 5/17/2017
www.semtech.com
1 of 8
Semtech
PROTECTION PRODUCTS
Features
• High ESD withstand voltage: +/-14kV (contact) and
+/-18kV (air) per IEC 61000-4-2
• Able to withstand over 1000 ESD strikes per IEC
61000-4-2 Level 4
• Ultra-small 0201 package
• Protects one high speed data line
• Low ESD clamping voltage
• Working voltage: +/- 24V
• Low capacitance: 0.35pF Typical
• Low leakage current
• Low dynamic resistance: 0.16 Ohms Typical
• Solid-state silicon-avalanche technology
Mechanical Characteristics
• SLP0603P2X3F package
• Pb-Free, Halogen Free, RoHS/WEEE compliant
• Nominal Dimensions: 0.6 x 0.3 x 0.25 mm
• Lead Finish: NiAu
• Marking: Marking code
• Packaging: Tape and Reel
Applications
• Near Field Communication (NFC) lines
• RF signal lines
• FM Antenna
RClamp2451ZA
Ultra Small RClamp®
1-Line, 24V ESD Protection
Description
RailClamp® TVS diodes are ultra low capacitance devices
designed to protect sensitive electronics from damage
or latch-up due to ESD, EFT, and EOS. They are designed
for use on high speed ports in applications such as cell
phones, notebook computers, and other portable elec-
tronics. These devices oer desirable characteristics for
board level protection including fast response time, low
operating and clamping voltage, and no device degrada-
tion.
RClamp®2451ZA is specically designed for protection
of Near Field Communications (NFC) interfaces. It fea-
tures extremely good ESD protection characteristics
including a low typical dynamic resistance of 0.16 Ohms
(typical), low peak ESD clamping voltage, and high ESD
withstand voltage (+/-14kV contact per IEC 61000-4-2).
Low typical capacitance (0.35pF at V
R
=0V) means that
RClamp2451ZA will not create harmonic distortion in the
RF signal. This device is bidirectional and has a working
voltage of 24V for use on NFC resonator circuits without
signal clipping.
RClamp2451ZA is in a 2-pin SLP0603P2X3F package
measuring 0.6 x 0.3 mm with a nominal height of
0.25mm. Leads are nished with lead-free NiAu. The
combination of working voltage, low dynamic resistance,
and low capacitance makes this device ideal for
use on NFC antenna ciruits, RF signal lines, and FM
antennas in portable devices.
0.300
0.600
0.250
0.160
0.355 BSC
0.220
1
2
Package Dimension Schematic & Pin Conguration
SLP0603P2X3F (Bottom View)
RClamp2451ZA
Final Datasheet Rev 3.1
Revision Date 5/17/2017
www.semtech.com
2 of 8
Semtech
Absolute Maximum Rating
Rating Symbol Value Units
Peak Pulse Power (tp = 8/20µs) P
PK
32 W
Peak Pulse Current (tp = 8/20µs) I
PP
4 A
ESD per IEC 61000-4-2 (Air)
(1)
ESD per IEC 61000-4-2 (Contact)
(1)
V
ESD
±18
±14
kV
Operating Temperature T
J
-40 to +85
O
C
Storage Temperature T
STG
-55 to +150
O
C
Electrical Characteristics (T=25
O
C unless otherwise specied)
Parameter Symbol Conditions Min. Typ. Max. Units
Reverse Stand-O Voltage V
RWM
Pin 1 to 2 or Pin 2 to 1 24 V
Breakdown Voltage V
BR
I
BR
= 10 μA 25.5 27.5 31 V
Reverse Leakage Current I
R
V
RWM
= 24V <1 50 nA
Clamping Voltage
2
V
C
I
PP
= 1A, tp = 1.2/50µs (Voltage), 8/20µs
(Current) Combination Waveform, R
S
= 12 Ω
4.5 7
V
Clamping Voltage
2
V
C
I
PP
= 4A, tp = 1.2/50µs (Voltage), 8/20µs
(Current) Combination Waveform, R
S
= 12 Ω
5.5 8
ESD Clamping Voltage
3
V
C
I = 4A, tp = 0.2/100ns 5
V
I = 16A, tp = 0.2/100ns 7
Dynamic Resistance
3,4
R
DYN
tp = 0.2/100ns 0.16 Ω
Junction Capacitance C
J
V
R
= 0V, f = 1MHz 0.35 0.45 pF
Notes:
(1) ESD gun return path connected to Ground Reference Plane (GRP)
(2) Measured using a 1.2/50μs voltage, 8/20μs current combination waveform, R
S
= 12 Ω. Clamping is dened as the peak voltage across the
device after the device snaps back to a conducting state.
(3) Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, I
TLP
and V
TLP
averaging window: t
1
= 70ns to t
2
= 90ns.
(4) Dynamic resistance calculated from I
TLP
= 4A to I
TLP
= 16A.
RClamp2451ZA
Final Datasheet Rev 3.1
Revision Date 5/17/2017
www.semtech.com
3 of 8
Semtech
Typical Characteristics
ESD Clamping (8kV Contact per IEC 61000-4-2)
ESD Clamping (-8kV Contact per IEC 61000-4-2)
TLP Characteristic (Positive Pulse)
Junction Capacitance vs. Reverse Voltage
-5
0
5
10
15
20
25
30
0 5 10 15 20 25 30
TLP Current (A)
Clamping Voltage (V)
Transmission Line Pulse Test
(TLP) Settings:
t
p
= 100ns, t
r
= 0.2ns,
I
TLP
and V
TLP
averaging window:
t
1
= 70ns to t
2
= 90ns
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0 5 10 15 20 25 30
Junction Capacitance
- C
J
(pF)
Reverse Voltage - V
R
(V)
f = 1 MHz
-30
-25
-20
-15
-10
-5
0
5
-30 -25 -20 -15 -10 -5 0
TLP Current (A)
Clamping Voltage (V)
Transmission Line Pulse Test
(TLP) Settings:
t
p
= 100ns, t
r
= 0.2ns,
I
TLP
and V
TLP
averaging window:
t
1
= 70ns to t
2
= 90ns
-15
-12
-9
-6
-3
0
0.01 0.1 1 10
Insertion Loss (dB)
Frequency (GHz)
RClamp2451ZA_IL_SPCD
-20
0
20
40
60
80
100
-10 0 10 20 30 40 50 60 70 80
Clamping Voltage (V)
Time (ns)
T
A
= 25
O
C.
Waveform IEC61000-4-2 8kV contact discharge.
Measured with and corrected for 50Ω, 40dB Attenuator.
50Ω Scope Input Impedance, ≥2GHz BW.
ESD Gun Return connected to ESD Ground Plane.
-100
-80
-60
-40
-20
0
20
-10 0 10 20 30 40 50 60 70 80
Clamping Voltage (V)
Time (ns)
T
A
= 25
O
C.
Waveform IEC61000-4-2 8kV contact discharge.
Measured with and corrected for 50Ω, 40dB Attenuator.
50Ω Scope Input Impedance, ≥2GHz BW.
ESD Gun Return connected to ESD Ground Plane.
TLP Characteristic (Negative Pulse)
Typical Insertion Loss -S21
P1-P3P4-P6P7-P8

RCLAMP2451ZATFT

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Manufacturer:
Semtech
Description:
TVS Diodes / ESD Suppressors RCLAMP2451ZATFT in Z1A
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