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IRFP4321PBF

P1-P3P4-P6P7-P9
6/23/06
PD - 97106
www.irf.com 1
HEXFET
®
Power MOSFET
IRFP4321PbF
Benefits
l Low R
DSON
Reduces Losses
l Low Gate Charge Improves the Switching
Performance
l Improved Diode Recovery Improves Switching &
EMI Performance
l 30V Gate Voltage Rating Improves Robustness
l Fully Characterized Avalanche SOA
Applications
l Motion Control Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l Hard Switched and High Frequency Circuits
S
D
G
GDS
Gate Drain Source
TO-247AC
S
D
G
D
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current d
P
D
@T
C
= 25°C
Maximum Power Dissipation W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage V
E
AS (Thermally limited)
Single Pulse Avalanche Energy e
mJ
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case g
––– 0.49
R
θCS
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
R
θJA
Junction-to-Ambient g
––– 40
310
Max.
78 c
55
330
-55 to + 175
2.0
10lbxin (1.1Nxm)
300
±30
210
V
DSS
150V
R
DS(on)
typ.
12m
:
max.
15.5m
:
I
D
78A
IRFP4321PbF
2 www.irf.com
S
D
G
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 75A
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.17mH
R
G
= 25Ω, I
AS
= 50A, V
GS
=10V. Part not recommended for use
above this value.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R
θ
is measured at T
J
approximately 90°C
Static @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 150 ––– ––– V
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 150 ––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 12 15.5
mΩ
V
GS(th)
Gate Threshold Voltage 3.0 ––– 5.0 V
I
DSS
Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 1.0 mA
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
R
G(int)
Internal Gate Resistance ––– 0.8 ––– Ω
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
gfs Forward Transconductance 130 ––– ––– S
Q
g
Total Gate Charge ––– 71 110 nC
Q
gs
Gate-to-Source Charge ––– 24 –––
Q
gd
Gate-to-Drain ("Miller") Charge ––– 21 –––
t
d(on)
Turn-On Delay Time ––– 18 ––– ns
t
r
Rise Time ––– 60 –––
t
d(off)
Turn-Off Delay Time ––– 25 –––
t
f
Fall Time ––– 35 –––
C
iss
Input Capacitance –––
4460
––– pF
C
oss
Output Capacitance –––
390
–––
C
rss
Reverse Transfer Capacitance –––
82
–––
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– –––
78c
A
(Body Diode)
I
SM
Pulsed Source Current ––– ––– 330 A
(Body Diode)d
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 89 130 ns
I
D
= 50A
Q
rr
Reverse Recovery Charge ––– 300 450 nC
V
R
= 128V,
I
RRM
Reverse Recovery Current ––– 6.5 ––– A
di/dt = 100A/µs f
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
GS
= 10V f
V
DD
= 75V
T
J
= 25°C, I
S
= 50A, V
GS
= 0V f
integral reverse
p-n junction diode.
showing the
I
D
= 50A
R
G
= 2.5Ω
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mAd
V
GS
= 10V, I
D
= 33A f
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 150V, V
GS
= 0V
V
DS
= 150V, V
GS
= 0V, T
J
= 125°C
MOSFET symbol
V
DS
= 75V
Conditions
V
GS
= 10V f
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
Conditions
V
DS
= 25V, I
D
= 50A
I
D
= 50A
V
GS
= 20V
V
GS
= -20V
IRFP4321PbF
www.irf.com 3
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 6. Typical Gate Charge vs. Gate-to-Source VoltageFig 5. Typical Capacitance vs. Drain-to-Source Voltage
3.0 4.0 5.0 6.0 7.0 8.0 9.0
V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
V
DS
= 25V
≤
60µs PULSE WIDTH
T
J
= 25°C
T
J
= 175°C
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 50A
V
GS
= 10V
1 10 100
V
DS
, Drain-to-Source Voltage (V)
0
1000
2000
3000
4000
5000
6000
7000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0 20406080100120
Q
G
Total Gate Charge (nC)
0
4
8
12
16
20
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 120V
VDS= 75V
VDS= 30V
I
D
= 50A
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤
60µs PULSE WIDTH
Tj = 25°C
5.0V
VGS
TOP 15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
BOTTOM 5.0V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤
60µs PULSE WIDTH
Tj = 175°C
5.0V
VGS
TOP 15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
BOTTOM 5.0V
P1-P3P4-P6P7-P9

IRFP4321PBF

Mfr. #:
Buy IRFP4321PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 150V 78A 15.5mOhm 71nC Qg
Lifecycle:
New from this manufacturer.
Delivery:
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