MMT05B230T3

© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 9
1 Publication Order Number:
MMT05B230T3/D
MMT05B230T3,
MMT05B260T3,
MMT05B310T3
Preferred Devices
Thyristor Surge Protectors
High Voltage Bidirectional TSPD
These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakover−triggered crowbar
protectors. Turn−off occurs when the surge current falls below the
holding current value.
Secondary protection applications for electronic telecom equipment
at customer premises.
Features
High Surge Current Capability: 50 A 10 x 1000 msec, for Controlled
Temperature Environments
The MMT05B230T3 Series is used to help equipment meet various
regulatory requirements including: Bellcore 1089, ITU K.20 & K.21,
IEC 950, UL 1459 & 1950 and FCC Part 68
Bidirectional Protection in a Single Device
Little Change of Voltage Limit with Transient Amplitude or Rate
Freedom from Wearout Mechanisms Present in Non−Semiconductor
Devices
Fail−Safe, Shorts When Overstressed, Preventing Continued
Unprotected Operation
Surface Mount Technology (SMT)
Indicates UL Registered − File #E210057
Pb−Free Packages are Available
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Off−State Voltage − Maximum
MMT05B230T3
MMT05B260T3
MMT05B310T3
V
DM
"170
"200
"270
V
Maximum Pulse Surge Short Circuit Current
Non−Repetitive Double Exponential Decay
Waveform (Notes 1 and 2)
(−25°C Initial Temperature)
8 x 20 msec
10 x 160 msec
10 x 560 msec
10 x 1000 msec
I
PPS1
I
PPS2
I
PPS3
I
PPS4
"150
"100
"70
"50
A(pk)
Maximum Non−Repetitive Rate of Change of
On−State Current Double Exponential Waveform,
R = 1.0, L = 1.5 mH, C = 1.67 mF, I
pk
= 110A
di/dt "150
A/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
BIDIRECTIONAL TSPD
50 AMPERE SURGE
265 thru 365 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
MT1 MT2
SMB
(No Polarity)
(Essentially JEDEC DO−214AA)
CASE 403C
(
)
RPBx = Device Code
x = G or J
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING DIAGRAMS
AYWW
RPBx G
G
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
MMT05B230T3, MMT05B260T3, MMT05B310T3
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Operating Temperature Range Blocking or Conducting State T
J1
40 to +125 °C
Overload Junction Temperature − Maximum Conducting State Only T
J2
+175 °C
Instantaneous Peak Power Dissipation (I
pk
= 50 A, 10x1000 msec @ 25°C)
P
PK
2000 W
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T
L
260 °C
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted) Devices are bidirectional. All electrical parameters apply to
forward and reverse polarities.
Characteristics Symbol Min Typ Max Unit
Breakover Voltage (Both polarities)
(dv/dt = 100 V/ms, I
SC
= 1.0 A, Vdc = 1000 V) MMT05B230T3
MMT05B260T3
MMT05B310T3
(+65°C)
MMT05B230T3
MMT05B260T3
MMT05B310T3
V
(BO)
265
320
365
280
340
400
V
Breakover Voltage (Both polarities)
(f = 60 Hz, I
SC
= 1.0 A(rms), V
OC
= 1000 V(rms), MMT05B230T3
R
I
= 1.0 kW, t = 0.5 cycle) (Note 3) MMT05B260T3
MMT05B310T3
(+65°C)
MMT05B230T3
MMT05B260T3
MMT05B310T3
V
(BO)
265
320
365
280
340
400
V
Breakover Voltage Temperature Coefficient dV
(BO)
/dT
J
0.08 %/°C
Breakdown Voltage (I
(BR)
= 1.0 mA) Both polarities
MMT05B230T3
MMT05B260T3
MMT05B310T3
V
(BR)
190
240
280
V
Off State Current (V
D1
= 50 V) Both polarities
Off State Current (V
D2
= V
DM
) Both polarities
I
D1
I
D2
2.0
5.0
mA
On−State Voltage (I
T
= 1.0 A)
(PW 300 ms, Duty Cycle 2%) (Note 3)
V
T
1.53 3.0 V
Breakover Current (f = 60 Hz, V
DM
= 1000 V(rms), R
S
= 1.0 kW) − Both polarities
I
BO
230 mA
Holding Current (Both polarities) (Note 3)
V
S
= 500 V; I
T
(Initiating Current) = "1.0 A
I
H
150 340 mA
Critical Rate of Rise of Off−State Voltage
(Linear waveform, V
D
= Rated V
BR
, T
J
= 25°C)
dv/dt 2000
V/ms
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)
Capacitance (f = 1.0 MHz, 2.0 Vdc, 15 mV rms Signal)
C
O
22
53
75
pF
3. Measured under pulse conditions to reduce heating.
MMT05B230T3, MMT05B260T3, MMT05B310T3
http://onsemi.com
3
+ Current
+ Voltage
V
TM
V
(BO)
I
(BO)
I
D2
I
D1
V
D1
V
D2
V
(BR)
I
H
Symbol Parameter
I
D1
, I
D2
Off State Leakage Current
V
D1
, V
D2
Off State Blocking Voltage
V
BR
Breakdown Voltage
V
BO
Breakover Voltage
I
BO
Breakover Current
I
H
Holding Current
V
TM
On State Voltage
Voltage Current Characteristic of TSPD
(Bidirectional Device)
Figure 1. Off−State Current versus Temperature
TEMPERATURE (°C)
140120100806040200
100
10
1
0.1
0.01
I
D1
, OFF−STATE CURRENT ( A)
Figure 2. Breakdown Voltage versus Temperatur
e
TEMPERATURE (°C)
V
BR
, BREAKDOWN VOLTAGE (VOLTS)
V
D1
= 50V
100500−50 125
320
300
280
260
240
220
200
180
160
340
MMT05B230T3
MMT05B260T3
MMT05B310T3
μ
75−25 25

MMT05B230T3

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
THYRISTOR 170V 150A DO214AA
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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