ADCMP600BRJZ-R2 Datasheet ADCMP600BRJZ-R2, DMP2022LSS-13 | P1-P3

DMP2022LSS

Document number: DS31373 Rev. 5 - 2

1 of 5

www.diodes.com

June 2010

DMP2022LSS

SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• 13m @ V

GS

= -10V

• 16m @ V

GS

= -4.5V

• 22m @ V

GS

= -2.5V

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 2)

• "Green" Device (Note 4)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.072g (approximate)

Maximum Ratings @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Units

Drain-Source Voltage

V

DSS

-20 V

Gate-Source Voltage

V

GSS

±12

V

Drain Current (Note 1) Steady

State

T

A

= 25°C

T

A

= 70°C

I

D

-10

-8

A

Pulsed Drain Current (Note 3)

I

DM

-35 A

Thermal Characteristics

Characteristic Symbol Value Unit

Total Power Dissipation (Note 1)

P

D

2.5 W

Thermal Resistance, Junction to Ambient

R

θ

JA

50 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150 °C

Notes: 1. Device mounted on 2 oz. Copper pads on FR-4 PCB.

2. No purposefully added lead.

3. Pulse width ≤10μS, Duty Cycle ≤1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

SO-8

TOP VIEW

Internal Schematic

TOP VIEW

S

D

G

D

S

DMP2022LSS

Document number: DS31373 Rev. 5 - 2

2 of 5

www.diodes.com

June 2010

DMP2022LSS

Electrical Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

BV

DSS

-20

⎯ ⎯

V

GS

= 0V, I

D

= -250μA

Zero Gate Voltage Drain Current

I

DSS

⎯ ⎯

-1

μA

V

DS

= -20V, V

GS

= 0V

Gate-Source Leakage

I

GSS

⎯ ⎯

±100

nA

V

GS

= ±12V, V

DS

= 0V

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

V

GS

(

th

)

-0.6 0.77 -1.1 V

V

DS

= V

GS

, I

D

= -250μA

Static Drain-Source On-Resistance

R

DS (ON)

⎯

8 13

mΩ

V

GS

= -10V, I

D

= -10A

⎯

11 16

V

GS

= -4.5V, I

D

= -9A

⎯

17 22

V

GS

= -2.5V, I

D

= -8A

Forward Transconductance

g

fs

⎯

28

⎯

S

V

DS

= -10V, I

D

= -10A

Diode Forward Voltage (Note 5)

V

SD

-0.5 0.68 -1.2 V

V

GS

= 0V, I

S

= -3A

DYNAMIC CHARACTERISTICS (Note 6)

Input Capacitance

C

iss

⎯

2444

⎯

pF

V

DS

= -10V, V

GS

= 0V

f = 1.0MHz

Output Capacitance

C

oss

⎯

594

⎯

pF

Reverse Transfer Capacitance

C

rss

⎯

556

⎯

pF

Gate Resistance

R

G

⎯

2.0

⎯ Ω V

GS

= 0V V

DS

= 0V, f = 1MHz

SWITCHING CHARACTERISTICS (Note 6)

Total Gate Charge

Q

g

⎯

28.1

56.9

⎯

nC

V

DS

= -10V, V

GS

= -4.5V, I

D

= -10A

V

DS

= -10V, V

GS

= -10V, I

D

= -10A

Gate-Source Charge

Q

g

s

⎯

3.4

⎯ V

DS

= -10V, V

GS

= -10V, I

D

= -10A

Gate-Drain Charge

Q

g

d

⎯

11.9

⎯ V

DS

= -10V, V

GS

= -10V, I

D

= -10A

Turn-On Delay Time

t

D

(

on

)

⎯

7.5 15

ns

V

DD

= -15V, I

D

= -1A, V

GS

= -10V,

R

GEN

= 6

Turn-On Rise Time

t

r

⎯

9.9 20

Turn-Off Delay Time

t

D

(

off

)

⎯

108.0 216

Turn-Off Fall Time

t

f

⎯

76.5 153

Notes: 5. Short duration pulse test used to minimize self-heating effect.

6. Guaranteed by design. Not subject to product testing.

0 0.5 1.0 1.5 2.0

Fig. 1 Typical Output Characteristic

-V , DRAIN-SOURCE VOLTAGE (V)

DS

0

5

10

15

20

25

30

-I , D

R

AI

N

C

U

R

E

N

T

(A)

D

Fig. 2 Typical Transfer Characteristics

0

5

10

15

20

25

30

0.5 1 1.5 2 2.5

-V , GATE SOURCE VOLTAGE (V)

GS

-I , D

R

AIN

C

U

R

EN

T

(A)

D

V = -5V

Pulsed

DS

DMP2022LSS

Document number: DS31373 Rev. 5 - 2

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www.diodes.com

June 2010

DMP2022LSS

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

-50 0 50 100 150

T , AMBIENT TEMPERATURE (C)

A

R , STATIC DRAIN-SOURCE

ON-RESISTANCE (NORMALIZED)

DS(ON)

Fig. 3 Normalized Static Drain-Source On-Resistance

vs. Ambient Temperature

V = -2.5V

I = -8.0A

GS

D

V = -4.5V

I = -9.0A

GS

D

V = -10V

I = -10A

GS

D

-25 25 75 125

-I , DRAIN CURRENT (A)

Fig. 4

D

On-Resistance vs. Drain Current and Gate Voltage

R , STATIC DRAIN-SOURCE ON-RESISTANCE ( )

DS(on)

Ω

0.001

0.01

0.1

0.1 1 10 100

V = -2.5V

GS

V = -3.0V

GS

V = -4.5V

GS

Fig. 5 Typical Total Capacitance

100

1,000

10,000

048121620

-V , DRAIN-SOURCE VOLTAGE (V)

DS

C

,

C

A

P

A

C

I

T

AN

C

E (p

F

)

C

iss

C

oss

C

rss

f = 1MHz

V = 0V

GS

Fig. 6 Gate Threshold Variation vs. Ambient Temperature

0

0.2

0.4

0.6

0.8

1.0

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

-V , GATE THRESHOLD VOLTAGE (V)

GS(TH)

I = -250µA

D

Fig. 7 Reverse Drain Current vs. Source-Drain Voltage

0.0001

0.001

0.01

0.1

1

10

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

-V , SOURCE-DRAIN VOLTAGE (V)

SD

-I , S

O

U

R

C

E

C

U

R

EN

T

(A)

S

ADCMP600BRJZ-R2

ADCMP600BRJZ-R2

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