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MIXA20W1200TMH
P1-P3
P4-P6
© 2009 IXYS All rights reser
ved
4 - 6
20091127a
MIXA20W1200TMH
IXYS reserves the right to change limits, test conditions and dimensions.
Part number
M
= Module
I
= IGBT
X
= XPT
A
= standard
20
= Current Rating [A]
W
= 6-P
ack
1200
= Rev
erse V
oltage [V]
T
= NTC
MH
= MiniP
ack2
Ordering
Part Name
Marking on Product
Delivering Mode
Base Qty
Ordering Code
Standard
MIXA 20
W 1200 TMH
MIXA20W1200TMH
Box
20
508388
Circuit Dia
gram
Outline Drawing
Dimensions in mm (1 mm = 0.0394“)
G1
G3
G5
G2
G4
G6
U
V
W
NTC1
EU
EV
EW
NTC2
D1
D3
D5
D2
D4
D6
T1
T3
T5
T2
T4
T6
P
© 2009 IXYS All rights reser
ved
5 - 6
20091127a
MIXA20W1200TMH
IXYS reserves the right to change limits, test conditions and dimensions.
0
1
2
3
0
5
10
15
20
25
30
0
5
10
1
5
20
25
30
35
0
1
2
3
4
0
1
2
3
4
5
0
5
1
0
1
5
2
0
2
5
3
0
V
CE
[V]
I
C
[A]
Q
G
[nC]
V
GE
[V]
9 V
11 V
5
6
7
8
9
10
11
12
13
0
5
10
15
20
25
30
0
1
0
20
3
0
40
5
0
60
0
5
10
15
20
13 V
4
0
60
8
0
10
0
12
0
14
0
16
0
1
.2
1
.6
2
.0
2
.4
2
.8
E
[mJ]
E
on
Fig. 1 Typ. output characteris
tics
V
CE
[V]
I
C
[A]
V
GE
= 15 V
17 V
19 V
Fig. 2 Typ. output characteris
tics
I
C
[A]
Fig. 3 Typ. tranfer characteristic
s
V
GE
[V]
Fig. 4
Typ. turn-on gate charge
Fig. 5 Typ. sw
itching ene
rgy vs. coll
ector current
E
off
Fig. 6 Typ. sw
itching ene
rgy vs. gate resis
tance
R
G
[
Ω
]
E
[mJ]
I
C
[A]
R
G
=
56
Ω
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
E
on
E
off
I
C
=
1
5 A
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
I
C
=
15 A
V
CE
= 600 V
T
VJ
= 125°C
T
VJ
= 25°C
V
GE
= 15 V
T
VJ
= 125°C
T
VJ
= 125°C
T
VJ
= 25°C
IGBT
T1 -
T6
© 2009 IXYS All rights reser
ved
6 - 6
20091127a
MIXA20W1200TMH
IXYS reserves the right to change limits, test conditions and dimensions.
200
300
400
500
6
00
700
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
10
20
30
40
Q
rr
[µC]
I
F
[A]
V
F
[V]
di
F
/dt
[A/µs]
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
V
R
= 600 V
10 A
20 A
40 A
Fig. 7 Typ. Forw
ard current versus V
F
Fig. 8 Typ. reverse recov.ch
arge Q
rr
vs. di/dt
200
300
400
500
60
0
700
0
5
10
15
20
25
30
35
I
RR
[A]
di
F
/dt
[A/µs]
T
VJ
= 125°C
V
R
= 600 V
10 A
20 A
40 A
Fig. 9 Typ. peak reverse current I
RM
vs. di/dt
200
3
00
400
500
60
0
700
0
100
200
300
400
500
600
700
t
rr
[ns]
di
F
/dt
[A/µs]
10 A
20 A
40 A
T
VJ
= 125°C
V
R
= 600 V
Fig. 10 Typ. recovery time
t
rr
versus di/dt
Fig. 11 Typ. recovery e
nergy E
rec
versus di/dt
200
300
400
500
60
0
700
0.2
0.4
0.6
0.8
1.0
1.2
1.4
E
rec
[mJ]
di
F
/dt
[A/µs]
T
VJ
= 125°C
V
R
= 600 V
10 A
20 A
40 A
0.001
0.01
0.1
1
10
0.01
0.1
1
10
t
p
[s]
Z
thJC
[K/W]
Fig. 12 Typ. transi
ent thermal imped
ance
Diode
IGBT
Diode
T1 -
T6
IGBT
FRD
R
i
t
i
R
i
t
i
1
0.252
0.0015
0.461
0.0015
2
0.209
0.03
0.291
0.03
3
0.541
0.03
0.423
0.03
4
0.258
0.08
0.326
0.08
P1-P3
P4-P6
MIXA20W1200TMH
Mfr. #:
Buy MIXA20W1200TMH
Manufacturer:
Littelfuse
Description:
IGBT Modules Six-Pack XPT IGBT
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
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