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BS170RLRP

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2011
November, 2017 − Rev. 7
1 Publication Order Number:
BS170/D
BS170
Small Signal MOSFET
500 mA, 60 Volts
N−Channel TO−92 (TO−226)
Features
• This is a Pb−Free Device*
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain−Source Voltage V
DS
60 Vdc
Gate−Source Voltage
− Continuous
− Non−repetitive (t
p
≤ 50 ms)
V
GS
V
GSM
± 20
± 40
Vdc
Vpk
Drain Current (Note) I
D
0.5 Adc
Total Device Dissipation @ T
A
= 25°C P
D
350 mW
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
NOTE: The Power Dissipation of the package may result in a lower continuous
drain current.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
BS170
AYWWG
G
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING DIAGRAM
& PIN ASSIGNMENT
D
G
TO−92 (TO−226)
CASE 29
STYLE 30
N−Channel
S
1
2
3
1
Drain
3
Source
2
Gate
500 mA, 60 Volts
R
DS(on)
= 5.0 W
www.onsemi.com
(Note: Microdot may be in either location)
BS170
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate Reverse Current
(V
GS
= 15 Vdc, V
DS
= 0)
I
GSS
− 0.01 10 nAdc
Drain−Source Breakdown Voltage
(V
GS
= 0, I
D
= 100 mAdc)
V
(BR)DSS
60 90 − Vdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.0 mAdc)
V
GS(Th)
0.8 2.0 3.0 Vdc
Static Drain−Source On Resistance
(V
GS
= 10 Vdc, I
D
= 200 mAdc)
r
DS(on)
− 1.8 5.0
W
Drain Cutoff Current
(V
DS
= 25 Vdc, V
GS
= 0 Vdc)
I
D(off)
− − 0.5
mA
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 250 mAdc)
g
fs
− 200 − mmhos
SMALL−SIGNAL CHARACTERISTICS
Input Capacitance
(V
DS
= 10 Vdc, V
GS
= 0, f = 1.0 MHz)
C
iss
− − 60 pF
SWITCHING CHARACTERISTICS
Turn−On Time
(I
D
= 0.2 Adc) See Figure 1
t
on
− 4.0 10 ns
Turn−Off Time
(I
D
= 0.2 Adc) See Figure 1
t
off
− 4.0 10 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
Device
Package Shipping
†
BS170 TO−92 (TO−226)
(Pb−Free)
1000 Unit/Tube
BS170RLRAG TO−92 (TO−226)
(Pb−Free)
2000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
BS170
www.onsemi.com
3
, DRAIN CURRENT (AMPS)
D(on)
I
, DRAIN CURRENT (AMPS)
D(on)
I
Figure 1. Switching Test Circuit
20 dB
50 W ATTENUATOR
PULSE GENERATOR
+25 V
V
in
40 pF
1.0 MW
50 W
125 W
50 W
V
out
TO SAMPLING SCOPE
50 W INPUT
OUTPUT
INVERTED
INPUT
PULSE
WIDTH
10%
50%
10%
90%
90%
t
off
t
on
Figure 2. Switching Waveforms
RESISTIVE SWITCHING
(V
in
Amplitude 10 Volts)
V
in
V
out
2.0
1.6
1.2
0.8
0.4
0
, THRESHOLD VOLTAGE
50
150
050
100
T
J
, JUNCTION TEMPERATURE (°C)
V
GS(th)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
0.8
0.4
1.2
2.0
1.6
1.0 2.0 3.0 4.00
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
0.8
0.4
1.2
1.6
2.0
010
20
30
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
0 10 2030 4050
60
40
20
80
100
40 60
Figure 3. V
GS(th)
Normalized versus Temperature Figure 4. On−Region Characteristics
Figure 5. Output Characteristics Figure 6. Capacitance versus
Drain−To−Source Voltage
V
GS
= 10 V
V
GS
= 0 V
C
iss
C
oss
C
rss
9.0 V
8.0 V
7.0 V
6.0 V
5.0 V
4.0 V
V
DS
= V
GS
I
D
= 1.0 mA
V
GS
= 10 V
9.0 V
8.0 V
7.0 V
6.0 V
5.0 V
4.0 V
P1-P3P4-P4

BS170RLRP

Mfr. #:
Buy BS170RLRP
Manufacturer:
ON Semiconductor
Description:
MOSFET 60V 500mA N-Channel
Lifecycle:
New from this manufacturer.
Delivery:
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