SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 OCTOBER 1995 ✪
FEATURES
* 100 Volt V
DS
*R
DS(on)
=20Ω
COMPLEMENTARY TYPE - ZVN3310F
PARTMARKING DETAIL - MR
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
-100 V
Continuous Drain Current at T
amb
=25°C I
D
75 mA
Pulsed Drain Current I
DM
-1.2 A
Gate Source Voltage V
GS
± 20
V
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
-100 V I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1.5 -3.5 V I
D
=-1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
-20 nA
V
GS
=± 20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-1
-50
µA
µA
V
DS
=-100V, V
GS
=0
V
DS
=-80V, V
GS
=0V, T=125°C(2)
On-State Drain Current(1) I
D(on)
-300 mA V
DS
=-25 V, V
GS
=-10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
20
Ω
V
GS
=-10V, I
D
=-150mA
Forward Transconductance
(1)(2)
g
fs
50 mS V
DS
=-25V, I
D
=-150mA
Input Capacitance (2) C
iss
50 pF
Common Source Output
Capacitance (2)
C
oss
15 pF V
DS
=-25V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
5pF
Turn-On Delay Time (2)(3) t
d(on)
8ns
V
DD
≈-25V, I
D
=-150mA
Rise Time (2)(3) t
r
8ns
Turn-Off Delay Time (2)(3) t
d(off)
8ns
Fall Time (2)(3) t
f
8ns
(1) Measured under pulsed conditions. Width=300
µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50
Ω source impedance and <5ns rise time on a pulse generator
D
TYPICAL CHARACTERISTICS
V Drain Source
Voltage Saturation Characteristics
V
Gate Source Voltage
(Volts)
I
-0.3A
-0.15A
-0.075A
Saturation Characteristics
V - Drain Source
Voltage (Volts)
I
-
Dra
i
n C
u
rre
n
t
(Am
p
s)
-5V
-4V
-10V
-8V
-6V
-9V
-7V
V
-20V
-12V
-16V
-14V
Normalised R
DS(on)
and V
GS(th)
v Temperature
T -Junction Temperature (°C)
N
or
m
al
i
sed
R
a
n
d
V
I -150mA
V -10V
I -1mA
V V
Transconductance v drain current
I - Drain Current (Amps
)
g
-Tra
n
sco
n
d
ucta
n
ce
(mS)
V -10VV -10V
V -Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C
-Ca
p
a
ci
ta
n
ce
(
p
F
)
C
C
C
V 0V
=1MHz
Q-Charge (nC)
V
-Ga
te S
ou
r
ce
Vol
ta
g
e
(
V
o
l
ts
)
Gate charge v gate-source voltage
V =
-25V
I
0.2A
-50V
-100V
ZVP3310F
3 - 4363 - 437
