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MMBTA28-7-F

P1-P3P4-P6
MMBTA28
Document number: DS30367 Rev. 10 - 2
1 of 6
www.diodes.com
February 2014
© Diodes Incorporated
MMBTA28
A Product Line o
f
Diodes Incorporated
80V NPN DARLINGTON TRANSISTOR IN SOT23
Features
BV
CES
> 80V
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
High Current Gain
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: molded plastic, “Green” molding compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight 0.008 grams (approximate)
Ordering Information (Note 4)
Part Number Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
MMBTA28-7-F AEC-Q101 K6R 7 8 3,000
MMBTA28-13-F AEC-Q101 K6R 13 8 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016 2017
Code X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View
Pin-Out
C
E
B
Top View Device Symbol
SOT23
C
E
B
K6R
YM
K6R = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: B = 2014)
M or M = Month (ex: 9 = September)
MMBTA28
Document number: DS30367 Rev. 10 - 2
2 of 6
www.diodes.com
February 2014
© Diodes Incorporated
MMBTA28
A Product Line o
f
Diodes Incorporated
Absolute Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
80 V
Collector-Emitter Voltage
V
CES
80 V
Emitter-Base Voltage
V
EBO
12 V
Continuous Collector Current
I
C
500 mA
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
(Note 5)
P
D
310
mW
(Note 6) 350
Thermal Resistance, Junction to Ambient
(Note 5)
R
θJA
403
C/W
(Note 6) 357
Thermal Resistance, Junction to Leads (Note 7)
R
θJL
350
C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
C
Notes: 5. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Same as note (5), except the device is mounted on 15 mm x 15mm 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of the leads).
0 25 50 75 100 125 150
0.0
0.1
0.2
0.3
0.4
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
50
100
150
200
250
300
350
400
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
10m 100m 1 10 100 1k
0.1
1
10
Single Pulse. T
amb
=25°C
Pulse Power Dissipation
Pulse Width (s)
Max Power Dissipation (W)
MMBTA28
Document number: DS30367 Rev. 10 - 2
3 of 6
www.diodes.com
February 2014
© Diodes Incorporated
MMBTA28
A Product Line o
f
Diodes Incorporated
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
80 — — V
I
C
= 100µA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 8)
BV
CES
80 — — V
I
C
= 100µA, V
BE
= 0
Emitter-Base Breakdown Voltage
BV
EBO
12 — — V
I
E
= 100µA, I
C
= 0
Collector cut-off current
I
CBO
— — 100 nA
V
CB
= 60V, I
E
= 0
I
CES
— — 500 nA
V
CE
= 60V, V
BE
= 0
Emitter-base Cut-off Current
I
EBO
— — 100 nA
V
EB
= 10V, I
C
= 0
ON CHARACTERISTICS (Note 8)
Static Forward Current Transfer Ratio
h
FE
10,000
10,000
— —
—
I
C
= 10mA, V
CE
= 5V
I
C
= 100mA, V
CE
= 5V
Collector-Emitter Saturation Voltage
V
CE(sat)
— —
1.2
1.5
V
I
C
= 10mA, I
B
= 10µA
I
C
= 100mA, I
B
= 100µA
Base-Emitter Turn-On Voltage
V
BE
(
on
)
— — 2.0 V
I
C
= 100mA, V
CE
= 5V
SMALL SIGNAL CHARACTERISTICS (Note 8)
Current Gain-Bandwidth Product
f
T
125 — — MHz
I
C
= 10mA, V
CE
= 5V,
f = 100MHz
Output Capacitance
C
obo
— 8.0 — pF
V
CB
= 10V, f = 1MHz, I
E
= 0
Input Capacitance
C
ibo
— 15.0 — pF
V
EB
= 0.5V, f = 1MHz, I
C
= 0
Note: 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
P1-P3P4-P6

MMBTA28-7-F

Mfr. #:
Buy MMBTA28-7-F
Manufacturer:
Diodes Incorporated
Description:
Darlington Transistors 80V 300mW
Lifecycle:
New from this manufacturer.
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