MMBT6515

©2003 Fairchild Semiconductor Corporation Rev. A. February 2003
MPS6515/MMBT6515
Absolute Maximum Ratings* T
C
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
T
C
=25°C unless otherwise noted
* Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
Thermal Characteristics
T
A
=25°C unless otherwise noted
* Device mounted on FR-4 PCB 1.6” × 0.06"
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 25 V
V
CBO
Collector-Base Voltage 40 V
V
EBO
Emitter-Base Voltage 4.0 V
I
C
Collector current - Continuous 200 mA
T
J
, T
stg
Junction and Storage Temperature -55 ~ +150 °C
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage I
C
= 0.5mA, I
B
= 0 25 V
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
=10µA, I
E
= 0 40 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
C
= 10µA, I
C
= 0 4.0 V
I
CBO
Collector Cutoff Current V
CE
= 30V, I
E
= 0 50 nA
I
CBO
Collector Cutoff Current V
CB
= 30V, I
E
= 0, T = 60°C1.0µA
On Characteristics *
h
FE
DC Current Gain I
C
= 2.0mA, V
CE
= 10V
I
C
= 100mA, V
CE
= 10V
250
150
500
V
CE(sat)
Collector-Emitter Saturation Voltage I
C
= 50mA, I
B
= 5.0mA 0.5 V
Small Signal Characteristics
C
obo
Output Capacitance V
CB
= 10V, I
E
= 0, f = 100kHz 3.5 pF
Symbol Parameter
Max.
Units
MPS6515 *MMBT6515
P
D
Total Device Dissipation
Derate above 25°C
625
5.0
350
2.8
mW
mW/°C
R
θJC
Thermal Resistance, Junction to Case 83.3 °C/W
R
θJA
Thermal Resistance, Junction to Ambient 200 357 °C/W
MPS6515/MMBT6515
NPN General Purpose Amplifier
This device is designed as a general purpose
amplifier and switch.
The useful dynamic range extends to 100mA as a
switch and to 100MHz as an amplifier.
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
Mark: 3J
TO-92
1
1. Emitter 2. Base 3. Collector
Package Dimensions
MPS6515/MMBT6515
Dimensions in Millimeters
Rev. A. February 2003©2003 Fairchild Semiconductor Corporation
TO-92
©2003 Fairchild Semiconductor Corporation Rev. A. February 2003
MPS6515/MMBT6515
Package Dimensions
(Continued)
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
SOT-23

MMBT6515

Mfr. #:
Manufacturer:
ON Semiconductor / Fairchild
Description:
Bipolar Transistors - BJT NPN Transistor General Purpose
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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