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NLV27WZ86USG

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2013
March, 2013 − Rev. 7
1 Publication Order Number:
NL27WZ86/D
NL27WZ86
Dual 2-Input Exclusive-OR
Gate
The NL27WZ86 is a high performance dual 2−input Exclusive−OR
Gate operating from a 1.65 V to 5.5 V supply.
Features
• Extremely High Speed: t
PD
2.4 ns (typical) at V
CC
= 5.0 V
• Designed for 1.65 V to 5.5 V V
CC
Operation
• Over Voltage Tolerant Inputs and Outputs
• LVTTL Compatible − Interface Capability With 5.0 V TTL Logic
with V
CC
= 3.0 V
• LVCMOS Compatible
• 24 mA Balanced Output Sink and Source Capability
• Near Zero Static Supply Current Substantially Reduces System
Power Requirements
• Replacement for NC7WZ86
• These Devices are Pb−Free and are RoHS Compliant
A2
Y2
Figure 1. Pinout (Top View)
Figure 2. Logic Symbol
= 1
Y1
A1
B2
B1
V
CC
A1
B1
GND
1
2
3
8
7
6
45
Y2
Y1
B2
A2
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
MARKING
DIAGRAM
http://onsemi.com
US8
US SUFFIX
CASE 493
1
8
L8 M G
G
L8 = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
PIN ASSIGNMENT
Pin
1
2
3
4
5
6
7
8
Function
A1
B1
Y2
GND
A2
B2
Y1
V
CC
Input
FUNCTION TABLE
B
L
H
L
H
Output
Y = A + B
Y
L
H
H
L
A
L
L
H
H
NL27WZ86
http://onsemi.com
2
MAXIMUM RATINGS
Symbol Parameter Value Units
V
CC
DC Supply Voltage −0.5 to +7.0 V
V
I
DC Input Voltage −0.5 to +7.0 V
V
O
DC Output Voltage −0.5 to +7.0 V
I
IK
DC Input Diode Current
V
I
< GND
−50 mA
I
OK
DC Output Diode Current
V
O
< GND
−50 mA
I
O
DC Output Sink Current ±50 mA
I
CC
DC Supply Current per Supply Pin ±100 mA
I
GND
DC Ground Current per Ground Pin ±100 mA
T
STG
Storage Temperature Range −65 to +150
_C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds 260
_C
T
J
Junction Temperature under Bias +150
_C
q
JA
Thermal Resistance (Note 1) 250
_C/W
P
D
Power Dissipation in Still Air at 85_C
250 mW
MSL Moisture Sensitivity Level 1
F
R
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
V
ESD
ESD Withstand Voltage
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
> 2000
> 200
N/A
V
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 125°C (Note 5) ±100 mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Units
V
CC
Supply Voltage
Operating
Data Retention Only
1.65
1.5
5.5
5.5
V
V
I
Input Voltage (Note 6) 0 5.5 V
V
O
Output Voltage (HIGH or LOW State) 0 5.5 V
T
A
Operating Free−Air Temperature −40 +125
_C
Dt/DV
Input Transition Rise or Fall Rate
V
CC
= 1.8 V ±0.15 V
V
CC
= 2.5 V ±0.2 V
V
CC
= 3.0 V ±0.3 V
V
CC
= 5.0 V ±0.5 V
0
0
0
0
20
20
10
5
ns/V
6. Unused inputs may not be left open. All inputs must be tied to a high− or low−logic input voltage level.
NL27WZ86
http://onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
Symbol Parameter Condition
V
CC
(V)
T
A
= 255C −405C 3 T
A
3 855C
Units
Min Typ Max Min Max
V
IH
High−Level Input
Voltage
1.65 to 1.95
2.3 to 5.5
0.75 V
CC
0.7 V
CC
0.75 V
CC
0.7 V
CC
V
V
IL
Low−Level Input
Voltage
1.65 to 1.95
2.3 to 5.5
0.25 V
CC
0.3 V
CC
0.25 V
CC
0.3 V
CC
V
V
OH
High−Level Output
Voltage
V
IN
= V
IH
I
OH
= −100 mA
1.65
1.8
2.3
3.0
4.5
1.55
1.7
2.2
2.9
4.4
1.65
1.8
2.3
3.0
4.5
1.55
1.7
2.2
2.9
4.4
V
I
OH
= −4 mA
I
OH
= −8 mA
I
OH
= −16 mA
I
OH
= −24 mA
I
OH
= −32 mA
1.65
2.3
3.0
3.0
4.5
1.29
1.9
2.4
2.3
3.8
1.52
2.15
2.80
2.68
4.20
1.29
1.9
2.4
2.3
3.8
V
V
OL
Low−Level Output
Voltage
V
IN
= V
IL
I
OL
= 100 mA
1.65
1.8
2.3
3.0
4.5
0.0
0.0
0.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
I
OL
= 4 mA
I
OL
= 8 mA
I
OL
= 16 mA
I
OL
= 24 mA
I
OL
= 32 mA
1.65
2.3
3.0
3.0
4.5
0.08
0.10
0.15
0.22
0.22
0.24
0.30
0.40
0.55
0.55
0.24
0.30
0.40
0.55
0.55
V
I
IN
Input Leakage Current V
IN
= 5.5 V or GND 0 to 5.5 ±0.1 ±1.0
mA
I
OFF
Power Off Leakage
Current
V
IN
= 5.5 V or
V
OUT
= 5.5 V
0 1.0 10
mA
I
CC
Quiescent Supply
Current
V
IN
= 5.5 V or GND 5.5 1.0 10
mA
AC ELECTRICAL CHARACTERISTICS t
R
= t
F
= 3.0 ns
V
CC
T
A
= 25_C *40_C 3 T
A
3 125_C
Symbol Parameter Condition (V) Min Typ Max Min Max Units
t
PLH
t
PHL
Propagation Delay
(Figure 3 and 4)
R
L
= 1 MW, C
L
= 15 pF
1.8 ± 0.15 2.0 7.9 9.0 2.0 10.5
ns
R
L
= 1 MW, C
L
= 15 pF
2.5 ± 0.2 1.2 4.1 7.0 1.2 7.5
R
L
= 1 MW, C
L
= 15 pF
R
L
= 500 W, C
L
= 50 pF
3.3 ± 0.3 0.8
1.2
3.0
3.8
4.8
5.4
0.8
1.2
5.2
5.9
R
L
= 1 MW, C
L
= 15 pF
R
L
= 500 W, C
L
= 50 pF
5.0 ± 0.5 0.5
0.8
2.2
2.9
3.5
4.2
0.5
1.0
3.8
4.6
CAPACITIVE CHARACTERISTICS
Symbol Parameter Condition Typical Units
C
IN
Input Capacitance V
CC
= 5.5 V, V
I
= 0 V or V
CC
2.5 pF
C
PD
Power Dissipation Capacitance
(Note 7)
10 MHz, V
CC
= 3.3 V, V
I
= 0 V or V
CC
10 MHz, V
CC
= 5.5 V, V
I
= 0 V or V
CC
9
11
pF
7. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
. C
PD
is used to determine the no−load dynamic
power consumption; P
D
= C
PD
V
CC
2
f
in
+ I
CC
V
CC
.
P1-P3P4-P5

NLV27WZ86USG

Mfr. #:
Buy NLV27WZ86USG
Manufacturer:
ON Semiconductor
Description:
Logic Gates LOG DUAL 2 INPUT AND
Lifecycle:
New from this manufacturer.
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