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BCX19LT1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 1994
November, 2016 − Rev. 9
1 Publication Order Number:
BCX17LT1/D
BCX17LT1G, PNP
BCX18LT1G, PNP
BCX19LT1G, NPN
SBCX19LT1G, NPN
General Purpose
Transistors
Voltage and Current are Negative for
PNP Transistors
Features
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage
BCX17, BCX19
BCX18
V
CEO
45
25
Vdc
Collector − Base Voltage
BCX17, BCX19
BCX18
V
CBO
50
30
Vdc
Emitter − Base Voltage V
EBO
5.0 Vdc
Collector Current − Continuous I
C
500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1), T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
SOT−23
(TO−236)
CASE 318−08
STYLE 6
MARKING DIAGRAM
COLLECTOR
3
1
BASE
2
EMITTER
PNP NPN
1
XX M G
G
(Note: Microdot may be in either location)
XX = T1, T2 or U1
M = Date Code*
G = Pb−Free Package
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
COLLECTOR
3
1
BASE
2
EMITTER
www.onsemi.com
BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0)
BCX17, BCX19, SBCX19
BCX18
V
(BR)CEO
45
25
−
−
−
−
Vdc
Collector−Emitter Breakdown Voltage
(I
C
= 10 mAdc, I
C
= 0)
BCX17, BCX19, SBCX19
BCX18
V
(BR)CES
50
30
−
−
−
−
Vdc
Collector Cutoff Current
(V
CB
= 20 Vdc, I
E
= 0)
(V
CB
= 20 Vdc, I
E
= 0, T
A
= 150°C)
I
CBO
−
−
−
−
100
5.0
nAdc
mAdc
Emitter Cutoff Current
(V
EB
= 5.0 Vdc, I
C
= 0)
I
EBO
− − 10
mAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 300 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 500 mAdc, V
CE
= 1.0 Vdc)
h
FE
100
70
40
−
−
−
600
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
CE(sat)
− − 0.62
Vdc
Base−Emitter On Voltage
(I
C
= 500 mAdc, V
CE
= 1.0 Vdc)
V
BE(on)
− − 1.2
Vdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device Specific Marking Package Shipping
†
BCX17LT1G
T1
SOT−23
(Pb−Free)
3,000 / Tape & Reel
NSVBCX17LT1G*
T1
SOT−23
(Pb−Free)
3,000 / Tape & Reel
BCX18LT1G
T2
SOT−23
(Pb−Free)
3,000 / Tape & Reel
BCX19LT1G
U1
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SBCX19LT1G*
U1
SOT−23
(Pb−Free)
3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable.
BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN
www.onsemi.com
3
I
C
, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
h
FE
, DC CURRENT GAIN
1000
10
10000.1 10 100
100
1.0
V
CE
= 1 V
T
J
= 25°C
I
B
, BASE CURRENT (mA)
Figure 2. Saturation Region
I
C
, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
100
10
1
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Temperature Coefficients
+1
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Capacitances
0.1 11 10 100 1000
-2
-1
0
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
V
, TEMPERATURE COEFFICIENTS (mV/ C)°θ
C, CAPACITANCE (pF)
1.0
0.8
0.6
0.4
0.2
0
0.01 0.1 10 1001
1.0
0.8
0.6
0.4
0.2
0
1 10 1000100
10 100
T
J
= 25°C
I
C
= 10 mA
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 1 V
V
CE(sat)
@ I
C
/I
B
= 10
q
VC
for V
CE(sat)
q
VB
for V
BE
C
ob
C
ib
100 mA 300 mA 500 mA
P1-P3P4-P4

BCX19LT1G

Mfr. #:
Buy BCX19LT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 500mA 50V NPN
Lifecycle:
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