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IPB80N08S406ATMA1

P1-P3P4-P6P7-P9
IPB80N08S4-06
IPI80N08S4-06, IPP80N08S4-06
OptiMOS
™
-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
C
=25°C, V
GS
=10V
1)
80 A
T
C
=100°C, V
GS
=10V
2)
80
Pulsed drain current
2)
I
D,pulse
T
C
=25°C
320
Avalanche energy, single pulse
2)
E
AS
I
D
=40A
270 mJ
Avalanche current, single pulse
I
AS
-
75 A
Gate source voltage
V
GS
- ±20 V
Power dissipation
P
tot
T
C
=25°C
150 W
Operating and storage temperature
T
j
, T
stg
- -55 ... +175 °C
Value
V
DS
80
V
R
DS(on),max
(SMD version) 5.5
mW
I
D
80 A
Product Summary
Type Package Marking
IPB80N08S4-06 PG-TO263-3-2 4N0806
IPI80N08S4-06 PG-TO262-3-1 4N0806
IPP80N08S4-06 PG-TO220-3-1 4N0806
PG-TO220-3-1
PG-TO262-3-1
PG-TO263-3-2
Rev. 1.0 page 1 2014-06-20
IPB80N08S4-06
IPI80N08S4-06, IPP80N08S4-06
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
2)
Thermal resistance, junction - case
R
thJC
- - - 1.0 K/W
Thermal resistance, junction -
ambient, leaded
R
thJA
- - - 62
SMD version, device on PCB
R
thJA
minimal footprint - - 62
6 cm
2
cooling area
3)
- - 40
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0V, I
D
= 1mA
80 - - V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=90µA
2.0 3.0 4.0
Zero gate voltage drain current
I
DSS
V
DS
=80V, V
GS
=0V
- 0.01 1 µA
V
DS
=80V, V
GS
=0V,
T
j
=125°C
2)
- 5 100
Gate-source leakage current
I
GSS
V
GS
=20V, V
DS
=0V
- - 100 nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10V, I
D
=80A
- 5.0 5.8
mW
V
GS
=10V, I
D
=80A,
SMD version
- 4.7 5.5
Values
Rev. 1.0 page 2 2014-06-20
IPB80N08S4-06
IPI80N08S4-06, IPP80N08S4-06
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
2)
Input capacitance
C
iss
- 3600 4800 pF
Output capacitance
C
oss
- 1400 1860
Reverse transfer capacitance
C
rss
- 75 150
Turn-on delay time
t
d(on)
- 12 - ns
Rise time
t
r
- 7 -
Turn-off delay time
t
d(off)
- 20 -
Fall time
t
f
- 25 -
Gate Charge Characteristics
2)
Gate to source charge
Q
gs
- 18 24 nC
Gate to drain charge
Q
gd
- 12 24
Gate charge total
Q
g
- 52 70
Gate plateau voltage
V
plateau
- 5.2 - V
Reverse Diode
Diode continous forward current
2)
I
S
- - 80 A
Diode pulse current
2)
I
S,pulse
- - 320
Diode forward voltage
V
SD
V
GS
=0V, I
F
=80A,
T
j
=25°C
- 0.9 1.3 V
Reverse recovery time
2)
t
rr
V
R
=40V, I
F
=50A,
di
F
/dt=100A/µs
- 90 - ns
Reverse recovery charge
2)
Q
rr
- 60 - nC
T
C
=25°C
Values
V
GS
=0V, V
DS
=25V,
f=1MHz
V
DD
=40V, V
GS
=10V,
I
D
=80A, R
G
=3.5W
V
DD
=64V, I
D
=80A,
V
GS
=0 to 10V
2)
Specified by design. Not subject to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
1)
Current is limited by bondwire; with an R
thJC
= 1.0K/W the chip is able to carry 118A at 25°C.
Rev. 1.0 page 3 2014-06-20
P1-P3P4-P6P7-P9

IPB80N08S406ATMA1

Mfr. #:
Buy IPB80N08S406ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CHANNEL 75/80V
Lifecycle:
New from this manufacturer.
Delivery:
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