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MRF6S19100HSR5

P1-P3P4-P6P7-P9P10-P11
4
RF Device Data
Freescale Semiconductor
MRF6S19100HR3 MRF6S19100HSR3
Figure 2. MRF6S19100HR3(HSR3) Test Circuit Component Layout
V
DD
V
GG
B1
R1
R2
C5
C4
C1 C2 C3
C7
C8 C9
C1
1
C10
C12
C6
CUT OUT AREA
MRF6S19100H/HS
Rev 2
-
+
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
MRF6S19100HR3 MRF6S19100HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
−20
−5
−10
−15
η
D
, DRAIN
EFFICIENCY (%)
IRL, INPUT RETURN LOSS (dB)
IM3 (dBc), ACPR (dBc)
19901930
IRL
G
ps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2- Carrier N- CDMA Broadband Performance @ P
out
= 22 Watts Avg.
−20
−5
−10
−15
V
DD
= 28 Vdc, P
out
= 22 W (Avg.), I
DQ
= 900 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
197019601940
15.4
16.6
−53
29
27
25
−35
−41
−47
IRL
G
ps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 4. 2- Carrier N- CDMA Broadband Performance @ P
out
= 44 Watts Avg.
V
DD
= 28 Vdc, P
out
= 44 W (Avg.), I
DQ
= 900 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
14.8
16.2
16
−45
42
40
38
−25
−30
−35
Figure 5. Two- Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
100
13
18
1
I
DQ
= 1300 mA
1125 mA
V
DD
= 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
17
16
15
10 300
−30
−15
1
I
DQ
= 450 mA
900 mA
100
−20
−25
300
−55
−50
V
DD
= 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
10
19901930
1970
19601940
η
D
, DRAIN
EFFICIENCY (%)
η
D
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IM3 (dBc), ACPR (dBc)
G
ps
, POWER GAIN (dB)
P
out
, OUTPUT POWER (WATTS) PEP P
out
, OUTPUT POWER (WATTS) PEP
G
ps
, POWER GAIN (dB)
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
16.4
16.2
16
15.8
15.6
1950 1980
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
15.8
15.6
15.4
15.2
15
1950 1980
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
14
900 mA
675 mA
450 mA
1300 mA
1125 mA
−35
−40
−45
675 mA
−40
η
D
6
RF Device Data
Freescale Semiconductor
MRF6S19100HR3 MRF6S19100HSR3
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
10
−60
0
0.1
7th Order
TWO−TONE SPACING (MHz)
V
DD
= 28 Vdc, P
out
= 100 W (PEP), I
DQ
= 900 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
5th Order
3rd Order
−10
−30
−40
−50
1 100
Figure 8. Pulsed CW Output Power versus
Input Power
Figure 9. 2- Carrier N- CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
0 −70
P
out
, OUTPUT POWER (WATTS) AVG.
60
−10
50
−20
40
−30
30
−40
10
−60
10 100
−50
20
V
DD
= 28 Vdc, I
DQ
= 900 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2−Carrier N−CDMA, 2.5 MHz Carrier
Spacing, 1.2288 MHz Channel
Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
40
56
31
P3dB = 51.56 dBm (143.2 W)
P
in
, INPUT POWER (dBm)
V
DD
= 28 Vdc, I
DQ
= 900 mA
Pulsed CW, 8 µsec(on), 1
msec(off)
f = 1960 MHz
54
53
52
46
32 33 36 37
Actual
Ideal
P1dB = 50.9 dBm (124.2 W)
55
48
30
10
17
0
70
P
out
, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
V
DD
= 28 Vdc
I
DQ
= 900 mA
f = 1960 MHz
10010
16
15
13
12
11
60
40
30
20
10
Figure 11. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS) CW
V
DD
= 32 V
IM3
η
D
G
ps
ACPR
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
IM3 (dBc), ACPR (dBc)
η
D
, DRAIN EFFICIENCY (%)
G
ps
η
D
G
ps
, POWER GAIN (dB)
20
0
6
18
0
16.5
10.5
9
25
12
15
28 V
I
DQ
= 900 mA
f = 1960 MHz
P
out
, OUTPUT POWER (dBm)
G
ps
, POWER GAIN (dB)
−20
51
24 V
50
47
49
34 35 38 39
14
50
13.5
7.5
50 75 100 125 150 175
4 200
3 200
P1-P3P4-P6P7-P9P10-P11

MRF6S19100HSR5

Mfr. #:
Buy MRF6S19100HSR5
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors HV6 WCDMA 22W NI780HS
Lifecycle:
New from this manufacturer.
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