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SS34HE3_A/H

P1-P3P4-P4
SS32, SS33, SS34, SS35, SS36
www.vishay.com
Vishay General Semiconductor
Revision: 04-Aug-15
1
Document Number: 88751
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Schottky Barrier Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
3.0 A
V
RRM
20 V, 30 V, 40 V, 50 V, 60 V
I
FSM
100 A
EAS 20 mJ
V
F
0.5 V, 0.75 V
T
J
max. 150 °C
Package DO-214AB (SMC)
Diode variations Single
DO-214AB (SMC)
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOLSS32SS33SS34SS35SS36UNIT
Device marking code S2 S3 S4 S5 S6
Maximum repetitive peak reverse voltage V
RRM
20 30 40 50 60 V
Maximum RMS voltage V
RMS
14 21 28 35 42 V
Maximum DC blocking voltage V
DC
20 30 40 50 60 V
Maximum average forward rectified current at T
L
(fig. 1) I
F(AV)
3.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
100 A
Non-repetitive avalanche energy at T
A
= 25 °C,
I
AS
= 2.0 A, L = 10 mH
E
AS
20 mJ
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction temperature range T
J
-55 to +150 °C
Storage temperature range T
STG
-55 to +150 °C
SS32, SS33, SS34, SS35, SS36
www.vishay.com
Vishay General Semiconductor
Revision: 04-Aug-15
2
Document Number: 88751
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Note
(1)
PCB. mounted 0.55" x 0.55" (14 mm x 14 mm) copper pad areas
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONSSYMBOLSS32SS33SS34SS35SS36UNIT
Maximum instantaneous
forward voltage
(1)
3.0 A V
F
0.5 0.75 V
Maximum DC reverse current
at rated DC blocking voltage
(1)
T
A
= 25 °C
I
R
0.5
mA
T
A
= 100 °C 20 10
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOLSS32SS33SS34SS35SS36UNIT
Typical thermal resistance
(1)
R
JA
55
°C/W
R
JL
17
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SS34-E3/57T 0.235 57T 850 7" diameter plastic tape and reel
SS34-E3/9AT 0.235 9AT 3500 13" diameter plastic tape and reel
SS34HE3_A/H
(1)
0.235 H 850 7" diameter plastic tape and reel
SS34HE3_A/I
(1)
0.235 I 3500 13" diameter plastic tape and reel
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0255075100125150
Average Forward Rectied Current (A)
Lead Temperature (°C)
PCB Mounted on 0.55" x 0.55"
(14 mm x 14 mm) Copper Pad Area
SS32 thru SS36
1
10
100
0
20
40
60
80
100
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
At Rated T
L
8.3 ms Single Half Sine-Wave
SS32, SS33, SS34, SS35, SS36
www.vishay.com
Vishay General Semiconductor
Revision: 04-Aug-15
3
Document Number: 88751
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Current Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
J
= 25 °C
SS32 thru SS34
SS35 and SS36
PulseWidth = 300˩s
1% Duty Cycle
T
J
= 150 °C
0.001
0.01
0.1
1
10
100
1000
0 20406080100
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
T
J
= 125 °C
SS32 thru SS34
SS35 and SS36
T
J
= 25 °C
T
J
= 75 °C
T
J
= 150 °C
0.1
1
10
100
10
1000
Reverse Voltage (V)
Junction Capacitance (pF)
100
SS32 thru SS34
SS35 and SS36
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
0.01
0.1
1
10
100
0.1
1
10
100
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
Cathode Band
DO-214AB (SMC)
0.126 (3.20)
0.114 (2.90)
0.246 (6.22)
0.220 (5.59)
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
0.060 (1.52)
0.030 (0.76)
0.103 (2.62)
0.079 (2.06)
Mounting Pad Layout
0.126 (3.20) MIN.
0.060 (1.52) MIN.
0.185 (4.69) MAX.
0.320 (8.13) REF.
P1-P3P4-P4

SS34HE3_A/H

Mfr. #:
Buy SS34HE3_A/H
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 40 Volt 3.0 Amp 100 Amp IFSM
Lifecycle:
New from this manufacturer.
Delivery:
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