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NTB75N06LT4

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 1
1 Publication Order Number:
NTP75N06L/D
NTP75N06L, NTB75N06L
Power MOSFET
75 Amps, 60 Volts, Logic
Level
N−Channel TO−220 and D
2
PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
• Pb−Free Packages are Available
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage V
DSS
60 Vdc
Drain−to−Gate Voltage (R
GS
= 10 MW)
V
DGR
60 Vdc
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (t
p
v10 ms)
V
GS
V
GS
"20
"15
Vdc
Drain Current
− Continuous @ T
A
= 25°C
− Continuous @ T
A
= 100°C
− Single Pulse (t
p
v10 ms)
I
D
I
D
I
DM
75
50
225
Adc
Apk
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
Total Power Dissipation @ T
A
= 25°C (Note 1)
P
D
214
1.4
2.4
W
W/°C
W
Operating and Storage Temperature Range T
J
, T
stg
−55 to
+175
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 50 Vdc, V
GS
= 5.0 Vdc, L = 0.3 mH
I
L(pk)
= 75 A, V
DS
= 60 Vdc)
E
AS
844 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
R
q
JC
R
q
JA
0.7
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
L
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in
2
).
75 AMPERES, 60 VOLTS
R
DS(on)
= 11 mW
N−Channel
D
S
G
TO−220AB
CASE 221A
STYLE 5
1
2
3
4
MARKING DIAGRAMS
& PIN ASSIGNMENTS
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
NTP75N06L
AYWW
1
Gate
3
Source
4
Drain
2
Drain
75N06LG
AYWW
1
Gate
3
Sourc
e
4
Drain
2
Drain
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
1
2
3
4
D
2
PAK
CASE 418B
STYLE 2
http://onsemi.com
NTP75N06L, NTB75N06L
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 2)
(V
GS
= 0 Vdc, I
D
= 250 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
−
72
74
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
I
DSS
−
−
−
−
10
100
mAdc
Gate−Body Leakage Current (V
GS
= ± 15 Vdc, V
DS
= 0 Vdc) I
GSS
− − ±100 nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (Note 2)
(V
DS
= V
GS
, I
D
= 250 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
−
1.58
6.0
2.0
−
Vdc
mV/°C
Static Drain−to−Source On−Resistance (Note 2)
(V
GS
= 5.0 Vdc, I
D
= 37.5 Adc)
R
DS(on)
− 9.0 11
mW
Static Drain−to−Source On−Voltage (Note 2)
(V
GS
= 5.0 Vdc, I
D
= 75 Adc)
(V
GS
= 5.0 Vdc, I
D
= 37.5 Adc, T
J
= 150°C)
V
DS(on)
−
−
0.75
0.61
0.99
−
Vdc
Forward Transconductance (Note 2) (V
DS
= 15 Vdc, I
D
= 37.5 Adc) g
FS
− 55 − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
− 3122 4370 pF
Output Capacitance
C
oss
− 1029 1440
Transfer Capacitance C
rss
− 276 390
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
(V
DD
= 30 Vdc, I
D
= 75 Adc,
V
GS
= 5.0 Vdc, R
G
= 9.1 W) (Note 2)
t
d(on)
− 22 32 ns
Rise Time t
r
− 265 370
Turn−Off Delay Time t
d(off)
− 113 160
Fall Time t
f
− 170 240
Gate Charge
(V
DS
= 48 Vdc, I
D
= 75 Adc,
V
GS
= 5.0 Vdc) (Note 2)
Q
T
− 66 92 nC
Q
1
− 9.0 −
Q
2
− 47 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (I
S
= 75 Adc, V
GS
= 0 Vdc) (Note 2)
(I
S
= 75 Adc, V
GS
= 0 Vdc, T
J
= 150°C)
V
SD
−
−
1.0
0.9
1.15
−
Vdc
Reverse Recovery Time
(I
S
= 75 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms) (Note 2)
t
rr
− 70 −
ns
t
a
− 43 −
t
b
− 27 −
Reverse Recovery Stored Charge Q
RR
− 0.16 −
mC
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
NTP75N06L, NTB75N06L
http://onsemi.com
3
0
120
3
60
21
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (
W
)
160
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
20
40
80
100
140
4
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
2
1.8
1.4
1.6
1.2
1
0.6
100
10
1000
10000
100000
0.008
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
080604020 100 120
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
I
D
, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
DSS
, LEAKAGE (nA)
−50 50250−25 75 100
1.4 1.8 5
0.012
0.004
0.016
0.02
04050302010 60
120
60
0
160
20
40
80
100
140
2.2 2.6 3 3.4 3.8 4.2 4.6
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
0.8
175150125
0.008
0.012
0.004
0.016
0.02
080604020 100 12
0
V
GS
= 5 V
T
J
= 25°C
T
J
= 100°C
T
J
= −55°C
I
D
= 37.5 A
V
GS
= 5 V
V
DS
w 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
T
J
= 100°C
T
J
= 125°C
T
J
= 150°C
V
GS
= 0 V
T
J
= 25°C
T
J
= 100°C
T
J
= −55°C
V
GS
= 10 V
V
GS
= 6 V
V
GS
= 5 V
V
GS
= 4.5 V
V
GS
= 4 V
V
GS
= 3.5 V
V
GS
= 3 V
V
GS
= 8 V
V
GS
= 7 V
V
GS
= 10 V
P1-P3P4-P6P7-P7

NTB75N06LT4

Mfr. #:
Buy NTB75N06LT4
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 60V 75A D2PAK
Lifecycle:
New from this manufacturer.
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