SPA15N65C3
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous diode forward current
2)
I
S
A
Diode pulse current
3)
I
S,pulse
45
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
- - 3.7 K/W
R
thJA
leaded - - 62
Soldering temperature,
wavesoldering only allowed at leads
T
sold
1.6 mm (0.063 in.)
from case for 10 s
- - 260 °C
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
=250 µA
650 - - V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
,
I
D
=0.675 mA
2.1 3 3.9
Zero gate voltage drain current
I
DSS
V
DS
=600 V, V
GS
=0 V,
T
j
=25 °C
- 0.5 25 µA
V
DS
=600 V, V
GS
=0 V,
T
j
=150 °C
-25-
Gate-source leakage current
I
GSS
V
GS
=20 V, V
DS
=0 V
- - 100 nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10 V, I
D
=9.4 A,
T
j
=25 °C
- 0.25 0.28
Ω
V
GS
=10 V, I
D
=9.4 A,
T
j
=150 °C
- 0.68 -
Gate resistance
R
G
f =1 MHz, open drain - 1.4 -
Ω
Values
Thermal resistance, junction -
ambient
Value
T
C
=25 °C
15
Rev. 2.0 page 2 2008-03-12