RN1412,RN1413
2014-03-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1412, RN1413
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
z With built-in bias resistors
z Simplified circuit design
z Reduce a quantity of parts and manufacturing process
z Complementary to RN2412, RN2413
Equivalent Circuit
Absolute Maximum Ratings
(Ta = 25
°
C)
Characteristic Symbol Rating Unit
Collector-base voltage V
CBO
50 V
Collector-emitter voltage V
CEO
50 V
Emitter-base voltage V
EBO
5 V
Collector current I
C
100 mA
Collector power dissipation P
C
200 mW
Junction temperature T
j
150 °C
Storage temperature range T
stg
−55 to 125 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25
°
C)
Characteristic Symbol
Test
Circuit
Test Condition Min Typ. Max Unit
Collector cut-off current I
CBO
― V
CB
= 50 V, I
E
= 0 ― ― 100 nA
Emitter cut-off current I
EBO
― V
EB
= 5 V, I
C
= 0 ― ― 100 nA
DC current gain h
FE (note)
― V
CE
= 5 V, I
C
= 1 mA 120 ― 700
Collector-emitter saturation voltage V
CE (sat)
― I
C
= 5 mA, I
B
= 0.25 mA ― 0.1 0.3 V
Transition frequency f
T
―
V
CE
= 10 V, I
C
= 5 mA ―
250
―
MHz
Collector output capacitance C
ob
―
V
CB
= 10 V, I
E
= 0, f = 1 MHz ― 3 6
pF
RN1412 15.4 22 28.6
Input resistor
RN1413
R1
― ―
32.9 47 61.1
kΩ
JEDEC TO-236MOD
JEITA SC-59
TOSHIBA 2-3F1A
Weight: 0.012g (typ.)
Unit: mm
Start of commercial production
1994-01
