OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

2N6490G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 16
1 Publication Order Number:
2N6487/D
2N6487, 2N6488 (NPN),
2N6490, 2N6491 (PNP)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and
switching applications.
Features
• High DC Current Gain
• High Current Gain − Bandwidth Product
• TO−220 Compact Package
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS (Note 1)
Rating
Symbol Value Unit
Collector−Emitter Voltage
2N6487, 2N6490
2N6488, 2N6491
V
CEO
60
80
Vdc
Collector−Base Voltage
2N6487, 2N6490
2N6488, 2N6491
V
CB
70
90
Vdc
Emitter−Base Voltage V
EB
5.0 Vdc
Collector Current − Continuous I
C
15 Adc
Base Current I
B
5.0 Adc
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
P
D
75
0.6
W
W/°C
Total Power Dissipation
@ T
A
= 25_C
Derate above 25_C
P
D
1.8
0.014
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Indicates JEDEC Registered Data.
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
1.67
_C/W
Thermal Resistance, Junction−to−Ambient
R
q
JA
70
_C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
15 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−80 VOLTS, 75 WATTS
www.onsemi.com
MARKING DIAGRAM
2N64xxG
AYWW
2N64xx = Specific Device Code
xx = See Table on Page 5
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
TO−220
CASE 221A
STYLE 1
1
2
3
4
1
BASE
EMITTER 3
COLLECTOR 2, 4
1
BASE
EMITTER 3
COLLECTOR 2, 4
PNP NPN
See detailed ordering, marking, and shipping information in
the package dimensions section on page 5 of this data sheet
.
ORDERING INFORMATION
2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted) (Note 2)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(I
C
= 200 mAdc, I
B
= 0)
2N6487, 2N6490
2N6488, 2N6491
V
CEO(sus)
60
80
−
−
Vdc
Collector−Emitter Sustaining Voltage (Note 3)
(I
C
= 200 mAdc, V
BE
= 1.5 Vdc)
2N6487, 2N6490
2N6488, 2N6491
V
CEX
70
90
−
−
Vdc
Collector Cutoff Current
(V
CE
= 30 Vdc, I
B
= 0)
2N6487, 2N6490
(V
CE
= 40 Vdc, I
B
= 0)
2N6488, 2N6491
I
CEO
−
−
1.0
1.0
mAdc
Collector Cutoff Current
(V
CE
= 65 Vdc, V
EB(off)
= 1.5 Vdc)
2N6487, 2N6490
(V
CE
= 85 Vdc, V
EB(off)
= 1.5 Vdc)
2N6488, 2N6491
(V
CE
= 60 Vdc, V
EB(off)
= 1.5 Vdc, T
C
= 150_C)
2N6487, 2N6490
(V
CE
= 80 Vdc, V
EB(off)
= 1.5 Vdc, T
C
= 150_C)
2N6488, 2N6491
I
CEX
−
−
−
−
500
500
5.0
5.0
mAdc
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
I
EBO
− 1.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 5.0 Adc, V
CE
= 4.0 Vdc)
(I
C
= 15 Adc, V
CE
= 4.0 Vdc)
h
FE
20
5.0
150
−
−
Collector−Emitter Saturation Voltage
(I
C
= 5.0 Adc, I
B
= 0.5 Adc)
(I
C
= 15 Adc, I
B
= 5.0 Adc)
V
CE(sat)
−
−
1.3
3.5
Vdc
Base−Emitter On Voltage
(I
C
= 5.0 Adc, V
CE
= 4.0 Vdc)
(I
C
= 15 Adc, V
CE
= 4.0 Vdc)
V
BE(on)
−
−
1.3
3.5
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 4)
(I
C
= 1.0 Adc, V
CE
= 4.0 Vdc, f
test
= 1.0 MHz)
f
T
5.0 −
MHz
Small−Signal Current Gain
(I
C
= 1.0 Adc, V
CE
= 4.0 Vdc, f = 1.0 kHz)
h
fe
25 −
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Indicates JEDEC Registered Data.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
4. f
T
= |h
fe
| • f
test
2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP)
http://onsemi.com
3
80
40
20
0
20 40 80 100 120 160
Figure 1. Power Derating
T
C
, CASE TEMPERATURE (°C)
P
D
, POWER DISSIPATION (WATTS)
60
T
A
T
C
4.0
2.0
1.0
3.0
0 60 140
T
A
T
C
0
Figure 2. Switching Time Test Circuit
1000
Figure 3. Turn−On Time
I
C
, COLLECTOR CURRENT (AMP)
t, TIME (ns)
500
50
20
0.2 20
T
C
= 25°C
V
CC
= 30 V
I
C
/I
B
= 10
10
1.0 5.0
t
r
0.5 2.0 10
200
100
t
d
@ V
BE(off)
[ 5.0 V
NPN
PNP
+ 10 V
0
SCOPE
R
B
- 4 V
t
r
, t
f
v 10 ns
DUTY CYCLE = 1.0%
R
C
D
1
MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE I
B
[ 100 mA
MSD6100 USED BELOW I
B
[ 100 mA
25 ms
- 10 V
D
1
51
R
B
AND R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS.
FOR PNP, REVERSE ALL POLARITIES.
V
CC
+ 30 V
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500
Z
q
JC
(t) = r(t) R
q
JC
R
q
JC
= 1.67°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
Z
q
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
P1-P3P4-P6

2N6490G

Mfr. #:
Buy 2N6490G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 15A 60V 75W PNP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet