OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

DDA143TH-7

P1-P3P4-P6
DDA (xxxx) H
Document number: DS30420 Rev. 6 - 2
1 of 6
www.diodes.com
June 2016
© Diodes Incorporated
DDA (xxxx) H
PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary NPN Types Available (DDC)
Built-In Biasing Resistors
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
P/N
R1 (NOM)
R2 (NOM)
DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
DDA143TH
DDA114TH DDA114TH
22kΩ
47kΩ
4.7kΩ
10kΩ
2.2kΩ
10kΩ
4.7kΩ
10kΩ
22kΩ
47kΩ
4.7kΩ
47kΩ
47kΩ
10kΩ
Mechanical Data
Case: SOT563
Case Material: Molded Plastic UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.005 grams (Approximate)
Ordering Information (Note 4)
Product
Compliance
Marking
Reel Size (inches)
Tape Width (mm)
Quantity per Reel
DDA124EH-7
AEC-Q101
P17
7
8
3,000
DDA144EH-7
AEC-Q101
P20
7
8
3,000
DDA143EH-7
AEC-Q101
P08
7
8
3,000
DDA114YH-7
AEC-Q101
P14
7
8
3,000
DDA123JH-7
AEC-Q101
P06
7
8
3,000
DDA114EH-7
AEC-Q101
P13
7
8
3,000
DDA143TH-7
AEC-Q101
P07
7
8
3,000
DDA114TH-7
AEC-Q101
P12
7
8
3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2015
2016
2017
2018
2019
2020
2021
2022
2023
2024
Code
C
D
E
F
G
H
I
J
K
L
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
R
1
, R
2
Device Schematic
R
1
Only
Device Schematic
R
1
R
1
R
2
6 5
4
3
2
1
R
2
R
1
R
1
6 5
4
3
2
1
SCHEMATIC DIAGRAM, TOP VIEW
PXX = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: C = 2015
M = Month ex: 9 = September
PXXYM
SOT563
DDA (xxxx) H
Document number: DS30420 Rev. 6 - 2
2 of 6
www.diodes.com
June 2016
© Diodes Incorporated
DDA (xxxx) H
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Supply Voltage
V
CC
-50
V
Input Voltage DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
DDA143TH
DDA114TH
V
IN
+10 to -40
+10 to -40
+10 to -30
+6 to -40
+5 to -12
+10 to -40
+5V Max
+5V Max
V
Output Current DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
DDA143TH
DDA114TH
I
O
-30
-30
-100
-70
-100
-50
-100
-100
mA
Output Current All
I
C
(Max)
-100
mA
Power Dissipation
P
D
150
mW
Thermal Resistance, Junction to Ambient Air (Note 5)
R
θJA
833
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Note: 5. Mounted on FR4 Board with recommended pad layout at http://www.diodes.com/package-outlines.html.
DDA (xxxx) H
Document number: DS30420 Rev. 6 - 2
3 of 6
www.diodes.com
June 2016
© Diodes Incorporated
DDA (xxxx) H
Electrical Characteristics (@T
A
= +25°C unless otherwise specified.)
Characteristic (DDA143TH & DDA114TH only)
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BV
CBO
-50
V
I
C
= -50µA
Collector-Emitter Breakdown Voltage
BV
CEO
-50
V
I
C
= -1mA
Emitter-Base Breakdown Voltage
BV
EBO
-5
V
I
E
= -50µA
Collector Cut-Off Current
I
CBO
-0.5
µA
V
CB
= -50V
Emitter Cut-Off Current
I
EBO
-0.5
µA
V
EB
= -4V
Collector-Emitter Saturation Voltage
V
CE(SAT)
-0.3
V
I
C
/I
B
= -2.5mA / -0.25mA DDA143TH
I
C
/I
B
= -1mA / -0.1mA DDA114TH
DC Current Transfer Ratio
h
FE
100
250
600
I
C
= -1mA, V
CE
= -5V
Gain-Bandwidth Product*
f
T
250
MHz
V
CE
= -10V, I
E
= 5mA, f = 100MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Input Voltage
DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
V
L(OFF)
-0.5
-0.5
-0.5
-0.3
-0.5
-0.5
-1.1
-1.1
-1.1


-1.1
V
V
CC
= -5V, I
O
= -100µA
DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
V
L(ON)
-1.9
-1.9
-1.9


1.9
-3.0
-3.0
-3.0
-1.4
-1.1
-3.0
V
O
= -0.3V, I
O
= -5mA
V
O
= -0.3V, I
O
= -2mA
V
O
= -0.3V, I
O
= -20mA
V
O
= -0.3V, I
O
= -1mA
V
O
= -0.3V, I
O
= -5mA
V
O
= -0.3V, I
O
= -10mA
Output Voltage
DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
V
O(ON)
-0.1
-0.3
V
I
O
/I
L
= -10mA / -0.5mA
I
O
/I
L
= -10mA / -0.5mA
I
O
/I
L
= -10mA / -0.5mA
I
O
/I
L
= -5mA / -0.25mA
I
O
/I
L
= -5mA / -0.25mA
I
O
/I
L
= -10mA / -0.5mA
Input Current
DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
I
L
-0.36
-0.18
-1.8
-0.88
-3.6
-0.88
mA
V
I
= -5V
Output Current
I
O(OFF)
-0.5
µA
V
CC
= -50V, V
I
= -0V
DC Current Gain
DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
G
L
56
68
20
68
80
30
V
O
= -5V, I
O
= -5mA
V
O
= -5V, I
O
= -5mA
V
O
= -5V, I
O
= -10mA
V
O
= -5V, I
O
= -10mA
V
O
= -5V, I
O
= -10mA
V
O
= -5V, I
O
= -5mA
Gain-Bandwidth Product*
f
T
250
MHz
V
CE
= -10V, I
E
= -5mA, f = 100MHz
* Transistor - For Reference Only
P1-P3P4-P6

DDA143TH-7

Mfr. #:
Buy DDA143TH-7
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - Pre-Biased 150MW 4.7K
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet