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NTMS4101PR2

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 1
1 Publication Order Number:
NTMS4101P/D
NTMS4101P
Trench Power MOSFET
20 V, 9.0 A, Single P−Channel, SO−8
Features
• Leading −20 V Trench for Low R
DS(on)
• Surface Mount SO−8 Package Saves Board Space
• Lead−Free Package for Green Manufacturing (G Suffix)
Applications
• Power Management
• Load Switch
• Battery Protection
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage V
DSS
−20 V
Gate−to−Source Voltage V
GS
±8.0 V
Continuous Drain Current
Steady State
I
D
−6.9
A
t ≤ 10 s −9.0
Pulsed Drain Current
t = 10 ms
I
DM
−30 A
Power Dissipation Steady State P
D
1.38 W
Operating Junction and Storage Temperature
Range
T
J
, T
stg
−55 to
150
°C
Continuous Source Current (Body Diode) I
S
−6.9 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 seconds)
T
L
260 °C
THERMAL RESISTANCE RATINGS
Junction−to−Ambient − Steady State (Note 1)
R
q
JA
90
°C/W
Junction−to−Ambient − t ≤ 10 s (Note 1)
R
q
JA
50
1. Surface−mounted on FR4 board using 1″ sq. pad size (Cu. area = 1.127 in.
sq. [1 oz.] including traces).
S
G
D
Device Package Shipping
ORDERING INFORMATION
NTMS4101PR2 SO−8 2500/Reel
P−Channel MOSFET
SO−8
CASE 751
STYLE 12
MARKING DIAGRAM &
PIN ASSIGNMENT
8
1
http://onsemi.com
XXX
ALYW
XXX = Specific Device Code
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
18
Drain
Drain
Drain
Drain
Source
Source
Source
Gate
Top View
−20 V
22 mW @ −2.5 V
16 mW @ −4.5 V
R
DS(on)
TYP
−9.0 A
I
D
MAX
V
(BR)DSS
NTMS4101PR2G SO−8
(Pb−Free)
2500/Reel
NTMS4101P
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter
Test Conditions Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
GS
= 0 V, I
D
= −250 mA
V
(BR)DSS
−20 V
Zero Gate Voltage Drain Current V
GS
= 0 V, V
DS
= −16 V I
DSS
−10
mA
Gate−to−Source Leakage Current V
GS
= ±8.0 V, V
DS
= 0 V I
GSS
±100 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS
= V
DS
, I
D
= −250 mA
V
GS(th)
−0.45 V
Drain−to−Source On−Resistance
V
GS
= −4.5 V, I
D
= −6.9 A
R
DS(on)
16 19 mW
V
GS
= −2.5 V, I
D
= −6.5 A 22 30
Forward Transconductance V
DS
= −15 V, I
D
= −6.9 A g
FS
70 S
CHARGES AND CAPACITANCES
Input Capacitance
V
GS
= 0 V, f = 1 MHz,
V
DS
= −10 V
C
iss
3200 pF
Output Capacitance C
oss
320
Reverse Transfer Capacitance C
rss
192
Total Gate Charge
V
GS
= −4.5 V, V
DS
= −10 V,
I
D
= −6.9 A
Q
G(TOT)
29.5 32
nC
Gate−to−Source Charge Q
GS
6.0
Gate−to−Drain Charge Q
GD
7.5
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
V
GS
= −4.5 V, V
DD
= −10 V,
I
D
= −1.0 A, R
G
= 6.0 Ω
t
d(on)
12.5
ns
Rise Time t
r
9.0
Turn−Off Delay Time t
d(off)
144
Fall Time t
f
38.5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V
GS
= 0 V, I
S
= −6.9 A V
SD
0.72 0.95 V
Reverse Recovery Time
V
GS
= 0 V, V
DS
= −10 V,
dI
S
/dt = 100 A/ms, I
S
= −6.9 A
t
rr
28 35
ns
Charge Time t
a
12
Discharge Time t
b
15
Reverse Recovery Charge Q
rr
.017 nC
2. Pulse Test: Pulse Width ≤300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
NTMS4101P
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
−2 V
125°C
0
25
5
20
632
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−I
D,
DRAIN CURRENT (AMPS)
15
5
0
1
Figure 1. On−Region Characteristics
0
25
1.512
15
10
5
0.5
0
2.5
Figure 2. Transfer Characteristics
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.1
810
0.3
0.2
0
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
−I
D,
DRAIN CURRENT (AMPS)
525
0.01
Figure 4. On−Resistance vs. Drain Current and
Temperature
−I
D,
DRAIN CURRENT (AMPS)
−50 0−25 25
1.3
1.1
0.9
0.7
0.3
50 125100
Figure 5. On−Resistance vs. Drain Current and
Gate Voltage
T
J
, JUNCTION TEMPERATURE (°C)
T
J
= 25°C
0.6
24
T
J
= −55°C
I
D
= −1.45 A
T
J
= 25°C
0.03
0
75
150
T
J
= 25°C
V
GS
= −4.5 V
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
4
25°C
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
1.5
V
GS
= −4 V
−1.2 V
012
−1.4 V
−1.6 V
−1.8 V
0.025
0.005
0.02
78
0.4
10 15 20
0.15
V
GS
= −10 V to −2.4 V
Figure 6. On−Resistance Variation with
Temperature
319
0.01
−I
D,
DRAIN CURRENT (AMPS)
0.03
0
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
V
GS
= −4.5 V
0.025
0.005
0.02
V
GS
= −2.5 V
11 15 17
0.015
10
20
0.5
6
T
J
= 100°C
T
J
= −55°C
51379
0.5
P1-P3P4-P5

NTMS4101PR2

Mfr. #:
Buy NTMS4101PR2
Manufacturer:
ON Semiconductor
Description:
MOSFET P-CH 20V 6.9A 8-SOIC
Lifecycle:
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