Io = 500mA
CDBQC0530L-HF
Page 1
QW-G1116
REV:B
A
mA
V
3
500
30
IO
VR
IFSM
O
C
O
C
+125
+125
TSTG
Tj
Storage temperature range
Junction temperature range
Mean rectifying current
DC reverse voltage
Peak forward surge current
Parameter
Conditions
Symbol
Min.
Typ.
Max.
Unit
V
VF
Forward voltage
Parameter
Conditions
Symbol
Min.
Typ.
Max.
Unit
Comchip Technology CO., LTD.
Comchip
S M D D i o d e S p e c i a l i s t
SMD Schottky Barrier Diodes
Maximum Ratings (at TA=25°C unless otherwise noted)
Electrical Characteristics (at T =25°C unless otherwise noted)A
Mechanical data
- Terminals: Gold plated, solderable per
MIL-STD-750, method 2026.
- Mounting position: Any
- Weight: 0.001 grams(approx.).
- Case: 0402C/SOD-923F standard package,
molded plastic.
- Polarity: Color band denotes cathode end.
Circuit Diagram
Features
- Low forward voltage.
- Designed for mounting on small surface.
- Extremely thin package.
- Majority carrier conduction.
-40
IF = 500mA
IF = 10mA
IF = 100mA
VR = 30V, TA=25°C
uA
200
IR
0.25
0.45
0.34
Reverse current
8.3ms single half sine-wave
superimposed on rate load,
1cycle (JEDEC method)
VR = 30V
RoHS Device
Halogen Free
90
-40
Company reserves the right to improve product design , functions and reliability without notice.
V
30
VRRM
Reverse stand-off voltage
°C/W
250
Thermal resistance
R JAθ
Dimensions in inches and (millimeter)
0402C/SOD-923F
0.022(0.55)
0.018(0.45)
0.001(0.02)
Max.
0.041(1.05)
0.037(0.95)
0.026(0.65)
BSC.
0.012(0.30)
0.008(0.20)
0.022(0.55)
0.018(0.45)
0.026(0.65)
0.022(0.55)
Total power dissipation
PD
mW
400
TA ≤ 25°C
VR = 1V, f=1MHZ
pF
CD
Diode capacitance
36
Junction to ambient
