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MBR1550CT-E3/45

P1-P3P4-P5
MBR(F,B)1535CT thru MBR(F,B)1560CT
Vishay General Semiconductor
Document Number: 88670
Revision: 08-Nov-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode Schottky Rectifier
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
7.5 A x 2
V
RRM
35 V to 60 V
I
FSM
150 A
V
F
0.57 V, 0.65 V
T
J
max. 150 °C
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR15xxCT
ITO-220AB
MBRB15xxCT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
MBRF15xxCT
PIN 2
PIN 1
PIN 3
TO-263AB
1
2
3
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR1535CT MBR1545CT MBR1550CT MBR1560CT UNIT
Maximum repetitive peak reverse voltage V
RRM
35 45 50 60 V
Working peak reverse voltage V
RWM
35 45 50 60 V
Maximum DC blocking voltage V
DC
35 45 50 60 V
Maximum average forward rectified
current at T
C
= 105 °C
total device
per diode
I
F(AV)
15
7.5
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
150 A
Peak repetitive reverse surge current per diode at
t
p
= 2.0 µs, 1 kHz
I
RRM
1.0 0.5 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/µs
Operating junction temperature range T
J
- 65 to + 150 °C
MBR(F,B)1535CT thru MBR(F,B)1560CT
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88670
Revision: 08-Nov-07
2
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Note:
(1) Automotive grade AEC Q101 qualified
Storage temperature range T
STG
- 65 to + 175 °C
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
V
AC
1500 V
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR1535CT MBR1545CT MBR1550CT MBR1560CT UNIT
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL MBR1535CT MBR1545CT MBR1550CT MBR1560CT UNIT
Maximum instantaneous
forward voltage per diode
(1)
I
F
= 7.5 A
I
F
= 7.5 A
I
F
= 15 A
I
F
= 15 A
T
C
= 25 °C
T
C
= 125 °C
T
C
= 25 °C
T
C
= 125 °C
V
F
-
0.57
0.84
0.72
0.75
0.65
-
-
V
Maximum instantaneous
reverse current at rated DC
blocking voltage per diode
(1)
T
C
= 25 °C
T
C
= 125 °C
I
R
0.1
15
1.0
50
mA
THERMAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR MBRF MBRB UNIT
Maximum thermal resistance per diode
R
θJA
R
θJC
60
3.0
-
5.0
60
3.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB MBR1545CT-E3/45 1.85 45 50/tube Tube
ITO-220AB MBRF1545CT-E3/45 1.99 45 50/tube Tube
TO-263AB MBRB1545CT-E3/45 1.35 45 50/tube Tube
TO-263AB MBRB1545CT-E3/81 1.35 81 800/reel Tape reel
TO-220AB MBR1545CTHE3/45
(1)
1.85 45 50/tube Tube
ITO-220AB MBRF1545CTHE3/45
(1)
1.99 45 50/tube Tube
TO-263AB MBRB1545CTHE3/45
(1)
1.35 45 50/tube Tube
TO-263AB MBRB1545CTHE3/81
(1)
1.35 81 800/reel Tape reel
MBR(F,B)1535CT thru MBR(F,B)1560CT
Vishay General Semiconductor
Document Number: 88670
Revision: 08-Nov-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
0
50
100
150
0
5
10
15
20
25
Average Forward Cu
rrent (A)
Case Temperature (°C)
Resistive or Inductive Load
1
10
100
50
25
75
100
125
150
175
Peak Forward Surge Current (A)
Number of Cycles at 60 Hz
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
0.01
0.1
0.1
0.2
0.3
0.4
0.5
0.6 0.7
0.8
0.9
1.0
1.1
1.2
0
1
10
100
Pulse Width = 300 µs
1 % Duty Cycle
T
J
= 125 °C
T
J
= 25 °C
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
MBR1535CT - MBR1545CT
MBR1550CT & MBR1560CT
Figure 4. Typical Reverse Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
0
20
40
60
80
100
0.001
0.01
0.1
1
10
100
T
J
= 125 °C
T
J
= 25 °C
T
J
= 75 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
MBR1535CT - MBR1545CT
MBR1550CT & MBR1560CT
0.1
1
10
100
10
100
1000
10 000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Reverse Voltage (V)
Junction Capacitance (pF)
MBR1535CT - MBR1545CT
MBR1550CT & MBR1560CT
0.01
0.1
1
10
100
0.1
1
10
100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
P1-P3P4-P5

MBR1550CT-E3/45

Mfr. #:
Buy MBR1550CT-E3/45
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers RECOMMENDED ALT 625-MBR1560CT-E3
Lifecycle:
New from this manufacturer.
Delivery:
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