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HSMP-3830-BLKG

P1-P3P4-P6P7-P7
HSMP-383x
Surface Mount RF PIN Diodes
Data Sheet
Features
• Diodes Optimized for:
Low Capacitance Switching
Low Current Attenuator
• Surface Mount SOT-23 Package
Single and Dual Versions
Tape and Reel Options Available
• Low Failure in Time (FIT) Rate
[1]
• Lead-free
Note:
1.
For more information see the Surface Mount PIN Reliability Data Sheet.
Package Lead Code Identication (Top View)
Description/Applications
The HSMP-383x series of general purpose PIN diodes
are designed for two classes of applications. The rst
is attenuators where current consumption is the most
important design consideration. The second application
for this series of diodes is in switches where low
capacitance is the driving issue for the designer.
The HSMP-386x series Total Capacitance (C
T
) and Total
Resistance (R
T
) are typical specications. For applications
that require guaranteed performance, the general
purpose HSMP-383x series is recommended.
A SPICE model is not available for PIN diodes as SPICE
does not provide for a key PIN diode characteristic,
carrier lifetime.
COMMON
CATHODE
#4
COMMON
ANODE
#3
SERIES
#2
SINGLE
#0
2
Absolute Maximum Ratings
[1]
T
C
= 25°C
Symbol Parameter Units Absolute Maximum
I
f
Forward Current (1 ms Pulse) Amp 1
P
t
Total Device Dissipation mW
[2]
250
P
iv
Peak Inverse Voltage — Same as V
BR
T
j
Junction Temperature °C 150
T
STG
Storage Temperature °C -65 to 150
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to
this device.
2. CW Power Dissipation at T
LEAD
= 25°C. Derate to zero at maximum rated temperature.
PIN General Purpose Diodes, Electrical Specications T
C
= 25°C
Minimum Maximum Maximum
Part Package Breakdown Series Total
Number Marking Lead Voltage Resistance Capacitance
HSMP- Code Code Conguration V
BR
(V) R
S
(Ω) C
T
(pF)
3830 K0 0 Single 200 1.5 0.3
3832 K2 2 Series
3833 K3 3 Common Anode
3834 K4 4 Common Cathode
Test Conditions V
R
= V
BR
I
F
= 100 mA V
R
= 50 V
Measure f = 100 MHz f = 1 MHz
I
R
≤ 10 mA
Typical Parameters at T
C
= 25°C
Part Number Series Resistance Carrier Lifetime Reverse Recovery Time Total Capacitance
HSMP- R
S
(Ω) τ (ns) T
rr
(ns) C
T
(pF)
383x 20 500 80 0.20 @ 50 V
Test Conditions I
F
= 1 mA I
F
= 50 mA V
R
= 10 V
f = 100 MHz I
R
= 250 mA I
F
= 20 mA
90% Recovery
3
Typical Parameters at T
C
= 25°C (unless otherwise noted), Single Diode
Figure 2. RF Capacitance vs. Reverse Bias.
0.15
0.30
0.25
0.20
0.35
0 2 64 10 128 1614 18 20
TOTAL CAPACITANCE (pF)
REVERSE VOLTAGE (V)
1 GHz
100 MHz
1 MHz
120
110
100
90
80
70
60
50
40
1000 100 10
Diode Mounted as a
Series Attenuator
in a 50 Ohm Microstrip
and Tested at 123 MHz
DIODE RF RESISTANCE ()
Figure 4. 2nd Harmonic Input Intercept Point vs.
Diode RF Resistance for Attenuators.
INPUT INTERCEPT POINT (dBm)
120
115
110
105
100
95
90
85
1 10 30
I
F
– FORWARD BIAS CURRENT (mA)
Figure 5. 2nd Harmonic Input Intercept Point vs.
Forward Bias Current for Switches.
INPUT INTERCEPT POINT (dBm)
Diode Mounted as a
Series Attenuator in a
50 Ohm Microstrip and
Tested at 123 MHz
100
10
1
0.1
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2
I
F
– FORWARD CURRENT (mA)
V
F
– FORWARD VOLTAGE (mA)
Figure 1. Forward Current vs. Forward Voltage.
125C 25C
–50C
1000
100
10
10 20 30
T
rr
- REVERSE RECOVERY TIME (nS)
FORWARD CURRENT (mA)
Figure 6. Reverse Recovery Time vs. Forward Current
for Various Reverse Voltage.
HSMP-3830
V
R
= 5V
V
R
= 10V
V
R
= 20V
Figure 3. RF Resistance at 25C vs. Forward Bias Current.
1000
100
10
1
0.1
RF RESISTANCE (OHMS)
I
F
– FORWARD BIAS CURRENT (mA)
0.01 0.1 1 10 100
P1-P3P4-P6P7-P7

HSMP-3830-BLKG

Mfr. #:
Buy HSMP-3830-BLKG
Manufacturer:
Broadcom / Avago
Description:
PIN Diodes 200 VBR 0.3 pF
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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