DSS4240Y-7 Datasheet DSS4240Y-7 | P1-P3

DSS4240Y

Document number: DS31682 Rev. 2 - 2

1 of 5

www.diodes.com

March 2011

ADVANCE INFORMATION

DSS4240Y

40V LOW V

CE(SAT)

NPN SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Ideal for Low Power Amplification and Switching

• Complementary PNP Type Available (DSS5240Y)

• Ultra Small Surface Mount Package

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free "Green" Device (Note 2)

• ESD rating: 400V-MM, 8KV-HBM

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT363

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin annealed over Copper Plated Alloy

42 leadframe. Solderable per MIL-STD-202, Method 208

• Weight: 0.006 grams (approximate)

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DSS4240Y-7 ZN8 7 8mm 3,000

Notes: 1. No purposefully added lead.

2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2010 2011 2012 2013 2014 2015

Code X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Top View

Device Schematic

Top View

Pin Out Configuration

ZN8 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: V = 2008)

M = Month (ex: 9 = September)

ZN8

YM

SOT363

C

B

C

E

C

B

E

DSS4240Y

Document number: DS31682 Rev. 2 - 2

2 of 5

www.diodes.com

March 2011

ADVANCE INFORMATION

DSS4240Y

Maximum Ratings @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage

V

CBO

40 V

Collector-Emitter Voltage

V

CEO

40 V

Emitter-Base Voltage

V

EBO

5 V

Collector Current - Continuous

I

C

2 A

Peak Pulse Collector Current

I

CM

3 A

Peak Base Current

I

BM

0.3 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 4) @ T

A

= 25°C P

D

625 mW

Thermal Resistance, Junction to Ambient (Note 4) @ T

A

= 25°C

R

θ

JA

200

°C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C

Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout.

0

0.2

0.4

0.6

0.8

050100150200

T , AMBIENT TEMPERATURE ( C)

A

°

Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)

P

,

P

O

WE

R

DISSI

P

A

T

I

O

N (W)

D

RC/W

θ

JA

°

= 200

0.1 1 10 100

V , COLLECTOR EMITTER VOLTAGE (V)

Fig. 2 Safe Operating Area

CE

0.001

0.01

0.1

1

100

I,

C

O

LLE

C

T

O

R

C

U

R

E

N

T

(A)

C

10

Pw = 100µs

0.00001 0.0001 0.001 0.01 0.1 1 10 100

1,000

Fig. 3 Transient Thermal Response

t , PULSE DURATION TIME (s)

1

0.001

0.01

0.1

1

r(t),

T

R

ANSIEN

T

H

E

R

MAL

R

ESIS

T

AN

C

E

T - T = P * R (t)

Duty Cycle, D = t /t

JA JA

12

θ

R (t) = r(t) *

θ

JA

R

R = 180°C/W

θ

JA

P(pk)

t

1

t

2

D = 0.7

D = 0.5

D = 0.3

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

D = 0.1

DSS4240Y

Document number: DS31682 Rev. 2 - 2

3 of 5

www.diodes.com

March 2011

ADVANCE INFORMATION

DSS4240Y

Electrical Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage

BV

CBO

40 150

⎯

V

I

C

= 100μA, I

E

= 0

Collector-Emitter Breakdown Voltage (Note 5)

BV

CEO

40 55

⎯

V

I

C

= 10mA, I

B

= 0

Emitter-Base Breakdown Voltage

BV

EBO

5 8.5

⎯

V

I

E

= 100μA, I

C

= 0

Collector Cutoff Current

I

CBO

⎯

100

50

nA

μA

V

CB

= 30V, I

E

= 0

V

CB

= 30V, I

E

= 0, T

A

= 150°C

Emitter Cutoff Current

I

EBO

⎯ ⎯

100 nA

V

EB

= 4V, I

C

= 0

DC Current Gain (Note 5)

h

FE

350

300

150

⎯

V

CE

= 2V, I

C

= 100mA

V

CE

= 2V, I

C

= 500mA

V

CE

= 2V, I

C

= 1A

V

CE

= 2V, I

C

= 2A

Collector-Emitter Saturation Voltage (Note 5)

V

CE(sat)

⎯

45

52

100

105

190

70

100

180

320

mV

I

C

= 100mA, I

B

= 1mA

I

C

= 500mA, I

B

= 50mA

I

C

= 750mA, I

B

= 15mA

I

C

= 1A, I

B

= 50mA

I

C

= 2A, I

B

= 200mA

Collector-Emitter Saturation Resistance

R

CE

(

sat

)

⎯

105 200 mΩ

I

C

= 500mA, I

B

= 50mA

Base-Emitter Saturation Voltage

V

BE

(

sat

)

⎯ ⎯

1.1 V

I

C

= 2A, I

B

= 200mA

Base-Emitter Turn On Voltage

V

BE

(

on

)

⎯ ⎯

0.75 V

V

CE

= 2V, I

C

= 100mA

Output Capacitance

C

obo

⎯ ⎯

20 pF

V

CB

= 10V, f = 1.0MHz

Current Gain-Bandwidth Product

f

T

100 250

⎯

MHz

V

CE

= 10V, I

C

= 50mA, f = 100MHz

Turn-On Time

t

on

⎯

64

⎯

ns

V

CC

= 10V

I

C

= 1A, I

B1

= -I

B2

= 50mA

Delay Time

t

d

⎯

20

⎯

ns

Rise Time

t

r

⎯

44

⎯

ns

Turn-Off Time

t

off

⎯

315

⎯

ns

Storage Time

t

s

⎯

275

⎯

ns

Fall Time

t

f

⎯

40

⎯

ns

Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

0

0.4

0.8

1.2

1.6

2.0

2.4

012345678910

V , COLLECTOR-EMITTER VOLTAGE (V)

CE

Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage

I,

C

O

LLE

C

T

O

R

C

U

R

E

N

T

(A)

C

I = 1mA

B

I = 2mA

B

I = 3mA

B

I = 4mA

B

I = 5mA

B

0

200

400

600

800

1,000

1,200

0.001 0.01 0.1 1 10

I , COLLECTOR CURRENT (A)

C

Fig. 5 Typical DC Current Gain vs. Collector Current

h, D

C

U

R

EN

T

G

AIN

FE

T = -55°C

A

V = -2V

CE

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

DSS4240Y-7

DSS4240Y-7

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