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NSS1C201LT1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2008
October, 2016 − Rev. 6
1 Publication Order Number:
NSS1C201L/D
NSS1C201L, NSV1C201L
100 V, 3.0 A, Low V
CE(sat)
NPN Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
A
= 25°C)
Rating
Symbol Max Unit
Collector-Emitter Voltage V
CEO
100 Vdc
Collector-Base Voltage V
CBO
140 Vdc
Emitter-Base Voltage V
EBO
7.0 Vdc
Collector Current − Continuous I
C
2.0 A
Collector Current − Peak I
CM
3.0 A
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
P
D
(Note 1) 490
3.7
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
(Note 1)
255 °C/W
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
P
D
(Note 2) 710
4.3
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
(Note 2)
176 °C/W
Junction and Storage
Temperature Range
T
J
, T
stg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ 100 mm
2
, 1 oz. copper traces.
2. FR−4 @ 500 mm
2
, 1 oz. copper traces.
Device Package Shipping
†
ORDERING INFORMATION
NSS1C201LT1G,
NSV1C201LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
MARKING DIAGRAM
COLLECTOR
3
1
BASE
2
EMITTER
SOT−23 (TO−236)
CASE 318
STYLE 6
3
2
1
www.onsemi.com
100 VOLTS, 3.0 AMPS
NPN LOW V
CE(sat)
TRANSISTOR
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
VT MG
G
VT = Specific Device Code
M = Date Code*
G = Pb−Free Package
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
NSS1C201L, NSV1C201L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector− Emitter Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0)
V
(BR)CEO
100
Vdc
Collector− Base Breakdown Voltage
(I
C
= 0.1 mAdc, I
E
= 0)
V
(BR)CBO
140
Vdc
Emitter− Base Breakdown Voltage
(I
E
= 0.1 mAdc, I
C
= 0)
V
(BR)EBO
7.0
Vdc
Collector Cutoff Current
(V
CB
= 140 Vdc, I
E
= 0)
I
CBO
100
nAdc
Emitter Cutoff Current
(V
EB
= 6.0 Vdc)
I
EBO
50
nAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(I
C
= 10 mA, V
CE
= 2.0 V)
(I
C
= 500 mA, V
CE
= 2.0 V)
(I
C
= 1.0 A, V
CE
= 2.0 V)
(I
C
= 2.0 A, V
CE
= 2.0 V)
h
FE
150
120
80
40
240 360
Collector− Emitter Saturation Voltage (Note 3)
(I
C
= 0.1 A, I
B
= 0.01 A)
(I
C
= 0.5 A, I
B
= 0.05 A)
(I
C
= 1.0 A, I
B
= 0.100 A)
(I
C
= 2.0 A, I
B
= 0.200 A)
V
CE(sat)
0.030
0.060
0.090
0.150
V
Base − Emitter Saturation Voltage (Note 3)
(I
C
= 1.0 A, I
B
= 0.100 A)
V
BE(sat)
0.950
V
Base − Emitter Turn−on Voltage (Note 3)
(I
C
= 1.0 A, V
CE
= 2.0 V)
V
BE(on)
0.850
V
Cutoff Frequency
(I
C
= 100 mA, V
CE
= 5.0 V, f = 100 MHz)
f
T
110
MHz
Input Capacitance (V
EB
= 2.0 V, f = 1.0 MHz) Cibo 230 pF
Output Capacitance (V
CB
= 10 V, f = 1.0 MHz) Cobo 14 pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
TYPICAL CHARACTERISTICS
Figure 1. Power Derating
T
A
, AMBIENT TEMPERATURE (°C)
140120100806040200
0
0.1
0.2
0.3
0.4
0.5
0.8
P
D
, POWER DERATING (W)
Note 2
Note 1
0.6
0.7
NSS1C201L, NSV1C201L
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 2. DC Current Gain
I
C
, COLLECTOR CURRENT (A)
1010.10.010.001
0
50
100
150
200
300
350
400
h
FE
, DC CURRENT GAIN
250
V
CE
= 2 V
150°C
−55°C
25°C
Figure 3. DC Current Gain
Figure 4. Collector−Emitter Saturation Voltage
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
1010.10.010.001
0.01
0.1
1
Figure 5. Collector−Emitter Saturation Voltage
Figure 6. Base−Emitter Saturation Voltage
I
C
, COLLECTOR CURRENT (A)
1010.10.010.001
0.2
0.4
0.6
0.8
1.0
1.2
Figure 7. Base−Emitter Saturation Voltage
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION (V)
V
CE(sat)
, COLLECTOR−EMITTER SATURATION (V)
V
BE(sat)
, BASE−EMITTER SATURATION (V)
1010.10.010.001
0
50
100
150
200
300
350
400
h
FE
, DC CURRENT GAIN
250
V
CE
= 4 V
150°C
−55°C
25°C
I
C
/I
B
= 10
150°C
−55°C
25°C
I
C
, COLLECTOR CURRENT (A)
1010.10.010.001
0.01
0.1
1
I
C
/I
B
= 20
150°C
−55°C
25°C
I
C
/I
B
= 10
150°C
−55°C
25°C
I
C
, COLLECTOR CURRENT (A)
1010.10.010.001
0.2
0.4
0.6
0.8
1.0
1.2
V
BE(sat)
, BASE−EMITTER SATURATION (V)
I
C
/I
B
= 50
150°C
−55°C
25°C
P1-P3P4-P6

NSS1C201LT1G

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Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT NPN 100V LOW V-SAT SOT23
Lifecycle:
New from this manufacturer.
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