DSM80101M-7 Datasheet DSM80101M-7 | P1-P3

DSM80101M

Document number: DS37318 Rev. 2 - 2

1 of 6

www.diodes.com

November 2014

DSM80101M

ADVANCE INFO R MA T I O N

NPN TRANSISTOR WITH DUAL SERIES SWITCHING DIODE

Features

 Integrates one NPN Transistor (Q1) and two Switching Diodes

(D1, D2) in a Single Compact Package

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

Mechanical Data

 Case: SOT26

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Matte Tin Finish Annealed over Copper Leadframe

(Lead-Free Plating). Solderable per MIL-STD-202, Method 208

 Terminal Connections: See Diagram

 Weight: 0.01 grams (Approximate)

Ordering Information (Note 4)

Part Number

Case

Packaging

DSM80101M-7

SOT26

3,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year

2014

2015

2016

2017

2018

2019

2020

2021

Code

B

C

D

E

F

G

H

I

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

Top View

Pin Configuration

Device Schematic

101M = Product Type Marking Code

(See Electrical Characteristics Table)

YM = Date Code Marking

Y = Year (ex: B = 2014)

M = Month (ex: 9 = September)

1 2 3

6 5 4

Q1

D1 D2

1 2

3

6 5 4

Q1

D1 D2

e3

101M

YM

DSM80101M

Document number: DS37318 Rev. 2 - 2

2 of 6

www.diodes.com

November 2014

DSM80101M

ADVANCE INFO R MA T I O N

Maximum Ratings – Q1 (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

80

V

Collector-Emitter Voltage

V

CEO

80

V

Emitter-Base Voltage

V

EBO

6.0

V

Continuous Collector Current

I

C(MAX)

500

mA

Peak Pulse Collector Current @ DC Increment for I

C

;

I

B

= 300mA; Test Duration >10s for each Step

I

CM

0.8

A

Base Current

I

B

200

mA

Maximum Ratings – D1, D2 (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Non-Repetitive Peak Reverse Voltage

V

RM

100

V

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V

RRM

V

RWM

V

R

75

V

RMS Reverse Voltage

V

R(RMS)

53

V

Forward Continuous Current (Note 5)

I

FM

300

mA

Average Rectified Output Current (Note 5)

I

O

200

mA

Non-Repetitive Peak Forward Surge Current @ t = 1.0µs

I

FSM

20

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5)

P

D

600

mW

Thermal Resistance, Junction to Ambient Air (Note 5)

R



JA

208

°C/W

Operating and Storage Temperature Range

T

J,

T

STG

-65 to +150

°C

Electrical Characteristics – Q1 (@T

A

= +25°C, unless otherwise specified.)

Characteristic (Note 6)

Symbol

Min

Typical

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BV

CBO

80

—

V

IC = 100µA, IE = 0

Collector-Emitter Breakdown Voltage

BV

CEO

80

—

V

IC = 1.0mA, IB = 0

Emitter-Base Breakdown Voltage

BV

EBO

6.0

—

V

IE = 100µA, IC = 0

Collector Cutoff Current

I

CBO

—

100

nA

VCB = 80V, IE = 0

Collector-Emitter Saturation Voltage

V

CE(SAT)

—

0.3

V

IC = 100mA, IB = 10mA

DC Current Transfer Ratio

h

FE

120

180

350

—

IC = 10mA, VCE = 1.0V

Electrical Characteristics – D1, D2 (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 6)

V

(BR)R

75

—

V

I

R

= 100µA

Forward Voltage

V

F

—

0.715

V

I

F

= 5.0mA

—

0.855

I

F

= 10mA

—

1.0

I

F

= 50mA

—

1.25

I

F

= 150mA

Leakage Current (Note 6)

I

R

—

0.1

µA

V

R

= 75V

—

25

nA

V

R

= 20V

Total Capacitance

C

T

—

2.0

pF

V

R

= 0V, f = 1.0MHz

Reverse Recovery Time

t

rr

—

4

ns

I

F

= I

R

= 10mA,

I

rr

= 0.1 x I

R

, R

L

= 100Ω

Notes: 5. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

DSM80101M

Document number: DS37318 Rev. 2 - 2

3 of 6

www.diodes.com

November 2014

DSM80101M

ADVANCE INFO R MA T I O N

0

100

-25 0

25 50 75

100

125

150

P , POWER DISSIPATION (mW)

D

T , AMBIENT TEMPERATURE (°C)

Fig. 1 Power Derating Curve

A

-50

200

300

400

500

600

700

800

R = 208°C/W

(Note 5)

JA

1

10 100

1,000

I , COLLECTOR CURRENT (mA)

Fig. 2 Typical DC Current Gain vs. Collector Current

C

100

1,000

10

h , DC CURRENT GAIN

FE ,

T =

A

-55 C°

T = 8

A

5C°

T =

A

150 C°

T =

A

25 C°

V = V

CE

5

0

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

0.45

0.50

0.55

0.60

0

2

4 6

8 10

V , COLLECTOR-EMITTER VOLTAGE (V)

Fig. 3 Typical Collector Current vs. Collector-Emitter Voltage

CE

I , COLLECTOR CURRENT (A)

C

I = 1mA

B

I = 0.1mA

B

I = 2mA

B

I = 3mA

B

I = 4mA

B

I = 5mA

B

I = 8mA

B

0

0.2

0.4

0.6

0.8

1.0

1.2

0.1

1 10

100

I , COLLECTOR CURRENT (mA)

Fig. 4 Typical Base Emitter Voltage vs. Collector Current

C

1,000

V , BASE EMITTER VOLTAGE (V)

BE(ON)

V = V

CE

5

T = 150°C

A

T = 25°C

A

T = 5°C

A

-5

T = 5°C

A

8

I , COLLECTOR CUTOFF CURRENT (nA)

CBO

0.1

1

10

100

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

Fig. 5 Collector Cutoff Current

vs. Ambient Temperature

A

V = 80V

I = 0

CB

E

0.40

0.45

0.50

0.55

0.60

0 8 16 24 32 40

V , REVERSE VOLTAGE (V)

Fig. 6 Typical Capacitance Characteristics - D1, D2

R

CAPACITANCE (pF)

f = 1MHz

DSM80101M-7

DSM80101M-7

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