Nexperia
S1DR
200 V, 1 A high power density, standard switching time PN-rectifier
S1DR All information provided in this document is subject to legal disclaimers.
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Nexperia B.V. 2018. All rights reserved
Product data sheet 10 January 2018 3 / 13
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
RRM
repetitive peak reverse
voltage
- 200 V
V
R
reverse voltage - 200 V
V
RMS
RMS voltage
T
j
= 25 °C
- 140 V
I
F
forward current δ = 1 ; T
sp
≤ 135 °C - 1.4 A
I
F(AV)
average forward current δ = 0.5 ; f = 20 kHz; square wave; T
sp
≤
140 °C
- 1 A
I
FSM
non-repetitive peak
forward current
t
p
= 8.3 ms; T
j(init)
= 25 °C; single half sine
wave (applied at rated load condition)
- 25 A
[1] - 735 mWP
tot
total power dissipation T
amb
≤ 25 °C
[2] - 1.19 W
T
j
junction temperature - 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - - 170 K/WR
th(j-a)
thermal resistance
from junction to
ambient
in free air
[2] - - 105 K/W
R
th(j-sp)
thermal resistance
from junction to solder
point
[3] - - 15 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[3] Soldering point of cathode tab.
