TIP35CP

P1-P3 P4-P6 P7-P9

September 2008 Rev 2 1/9

9

TIP35CP

TIP36CP

Complementary power transistors

Features

■ Low collector-emitter saturation voltage

■ Complementary NPN-PNP transistors

Applications

■ General purpose

■ Audio amplifier

Description

The devices are manufactured in planar

technology with “base island” layout. The

resulting transistors show exceptional high gain

performance coupled with very low saturation

voltage.

.

Figure 1. Internal schematic diagrams

Table 1. Device summary

TO-3P

1

2

3

Order code Marking Package Packaging

TIP35CP TIP35CP

TO-3P Tube

TIP36CP TIP36CP

ww w.st.com

Electrical ratings TIP35CP - TIP36CP

2/9

1 Electrical ratings

For PNP type voltage and current values are negative.

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

NPN TIP35CP

PNP TIP36CP

V

CBO

Collector-base voltage (I

E

= 0) 100 V

V

CEO

Collector-emitter voltage (I

B

= 0) 100 V

V

EBO

Emitter-base voltage (I

C

= 0) 5 V

I

C

Collector current 25 A

I

CM

Collector peak current (t

P

< 5 ms) 50 A

I

B

Base current 5 A

P

tot

Total dissipation at T

case

= 25 °C 125 W

T

stg

Storage temperature -65 to 150 °C

T

J

Max. operating junction temperature 150 °C

Table 3. Thermal data

Symbol Parameter Value Unit

R

thj-case

Thermal resistance junction-case max 1 °C/W

TIP35CP - TIP36CP Electrical characteristics

3/9

2 Electrical characteristics

(T

case

= 25 °C; unless otherwise specified)

Table 4. Electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

CEO

Collector cut-off current

(I

B

= 0)

V

CE

= 60 V

1mA

I

EBO

Emitter cut-off current

(I

C

= 0)

V

EB

= 5 V

1mA

I

CES

Collector cut-off current

(V

BE

= 0)

V

CE

= 100 V

0.7 mA

V

CEO(sus)

(1)

1. Pulsed duration = 300 ms, duty cycle ≥ 1.5%.

For PNP type voltage and current are negative.

Collector-emitter

sustaining voltage

(I

B

= 0)

I

C

= 30 mA

100 V

V

CE(sat)

(1)

Collector-emitter

saturation voltage

I

C

= 15 A __ I

B

= 1.5 A

I

C

= 25 A _ I

B

= 5 A

1.8

4

V

V

V

BE(on)

(1)

Base-emitter voltage

I

C

= 15 A __ V

CE

= 4 V

I

C

= 25 A _ V

CE

= 4 V

2

4

V

V

h

FE

(1)

DC current gain

I

C

= 1.5 A_ V

CE

= 4 V

I

C

= 15 A __ V

CE

= 4 V

25

10

50

f

T

Transition frequency

I

C

= 1 A_ V

CE

= 10 V

f = 1 MHz

3MHz

P1-P3 P4-P6 P7-P9

TIP35CP

Mfr. #:

Manufacturer:

STMicroelectronics

Description:

Bipolar Transistors - BJT Complementary power transistors

Lifecycle:

New from this manufacturer.

Delivery:

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