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MV2109G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 4
1 Publication Order Number:
MMBV2101LT1/D
MMBV2101LT1 Series,
MV2105, MV2101, MV2109,
LV2209
Preferred Device
Silicon Tuning Diodes
These devices are designed in popular plastic packages for the high
volume requirements of FM Radio and TV tuning and AFC, general
frequency control and tuning applications. They provide solid−state
reliability in replacement of mechanical tuning methods. Also
available in a Surface Mount Package up to 33 pF.
Features
• High Q
• Controlled and Uniform Tuning Ratio
• Standard Capacitance Tolerance − 10%
• Complete Typical Design Curves
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
R
30 Vdc
Forward Current I
F
200 mAdc
Forward Power Dissipation
@ T
A
= 25°C MMBV21xx
Derate above 25°C
@ T
A
= 25°C MV21xx
Derate above 25°C LV2209
P
D
225
1.8
280
2.8
mW
mW/°C
mW
mW/°C
Junction Temperature T
J
+150 °C
Storage Temperature Range T
stg
−55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(I
R
= 10 mAdc)
MMBV21xx, MV21xx
LV2209
V
(BR)R
30
25
−
−
−
−
Vdc
Reverse Voltage Leakage Current
(V
R
= 25 Vdc, T
A
= 25°C)
I
R
− − 0.1
mAdc
Diode Capacitance Temperature Co-
efficient (V
R
= 4.0 Vdc, f = 1.0 MHz)
TC
C
− 280 − ppm/°C
Preferred devices are recommended choices for future use
and best overall value.
3
Cathode
1
Anode
2
Cathode
1
Anode
SOT−23
TO−92
1
2
3
1
2
yy
yyyy
AYWW G
G
TO−92 (TO−226AC)
CASE 182
STYLE 1
SOT−23 (TO−236)
CASE 318−08
STYLE 8
yyyyyy = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
6.8−100 pF, 30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODES
1
xxx M G
G
xxx = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
MARKING
DIAGRAMS
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209
http://onsemi.com
2
C
T
, Diode Capacitance
V
R
= 4.0 Vdc, f = 1.0 MHz
pF
Q, Figure of Merit
V
R
= 4.0 Vdc,
f = 50 MHz
TR, Tuning Ratio
C
2
/C
30
f = 1.0 MHz
Device Marking Package Shipping
†
Min Nom Max Typ Min Typ Max
MMBV2101LT1 M4G SOT−23 3,000 / Tape & Reel 6.1 6.8 7.5 450 2.5 2.7 3.2
MMBV2101LT1G M4G SOT−23
(Pb−Free)
3,000 / Tape & Reel 6.1 6.8 7.5 450 2.5 2.7 3.2
MMBV2101L M4G SOT−23 Bulk (Note 1) 6.1 6.8 7.5 450 2.5 2.7 3.2
MV2101 MV2101 TO−92 1,000 per Box 6.1 6.8 7.5 450 2.5 2.7 3.2
MV2101G MV2101 TO−92
(Pb−Free)
1,000 per Box 6.1 6.8 7.5 450 2.5 2.7 3.2
MMBV2103LT1 4H SOT−23 3,000 / Tape & Reel 9.0 10 11 400 2.5 2.9 3.2
MMBV2105LT1 4U SOT−23 3,000 / Tape & Reel 13.5 15 16.5 400 2.5 2.9 3.2
MMBV2105LT1G 4U SOT−23
(Pb−Free)
3,000 / Tape & Reel 13.5 15 16.5 400 2.5 2.9 3.2
MMBV2105L 4U SOT−23 Bulk (Note 1) 13.5 15 16.5 400 2.5 2.9 3.2
MV2105 MV2105 TO−92 1,000 per Box 13.5 15 16.5 400 2.5 2.9 3.2
MV2105G MV2105 TO−92
(Pb−Free)
1,000 per Box 13.5 15 16.5 400 2.5 2.9 3.2
MMBV2107LT1 4W SOT−23 3,000 / Tape & Reel 19.8 22 24.2 350 2.5 2.9 3.2
MMBV2107LT1G 4W SOT−23
(Pb−Free)
3,000 / Tape & Reel 19.8 22 24.2 350 2.5 2.9 3.2
MMBV2107L 4W SOT−23 Bulk (Note 1) 19.8 22 24.2 350 2.5 2.9 3.2
MMBV2108LT1 4X SOT−23 3,000 / Tape & Reel 24.3 27 29.7 300 2.5 3.0 3.2
MMBV2108LT1G 4X SOT−23
(Pb−Free)
3,000 / Tape & Reel 24.3 27 29.7 300 2.5 3.0 3.2
LV2209 LV2209 TO−92 1,000 per Box 29.7 33 36.3 200 2.5 3.0 3.2
MMBV2109LT1 4J SOT−23 3,000 / Tape & Reel 29.7 33 36.3 200 2.5 3.0 3.2
MMBV2109LT1G 4J SOT−23
(Pb−Free)
3,000 / Tape & Reel 29.7 33 36.3 200 2.5 3.0 3.2
MMBV2109L 4J SOT−23 Bulk (Note 1) 29.7 33 36.3 200 2.5 3.0 3.2
MV2109 MV2109 TO−92 1,000 per Box 29.7 33 36.3 200 2.5 3.0 3.2
MV2109G MV2109 TO−92
(Pb−Free)
1,000 per Box 29.7 33 36.3 200 2.5 3.0 3.2
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
1. MMBV2101LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk. Use the device title and drop the “T1”
suffix when ordering any of these devices in bulk.
PARAMETER TEST METHODS
1. C
T
, DIODE CAPACITANCE
(C
T
= C
C
+ C
J
). C
T
is measured at 1.0 MHz using a capacitance
bridge (Boonton Electronics Model 75A or equivalent).
2. TR, TUNING RATIO
TR is the ratio of C
T
measured at 2.0 Vdc divided by C
T
measured at 30 Vdc.
3. Q, FIGURE OF MERIT
Q is calculated by taking the G and C readings of an admittance
bridge at the specified frequency and substituting in the
following equations:
Q +
2pfC
G
(Boonton Electronics Model 33AS8 or equivalent). Use Lead
Length [ 1/16″.
4. TC
C
, DIODE CAPACITANCE TEMPERATURE
COEFFICIENT
TC
C
is guaranteed by comparing C
T
at V
R
= 4.0 Vdc, f = 1.0
MHz, T
A
= −65°C with C
T
at V
R
= 4.0 Vdc, f = 1.0 MHz, T
A
= +85°C in the following equation, which defines TC
C
:
TC
C
+
Ť
C
T
() 85°C) – C
T
(–65°C)
85 ) 65
Ť
·
10
6
C
T
(25°C)
Accuracy limited by measurement of C
T
to ±0.1 pF.
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209
http://onsemi.com
3
TYPICAL DEVICE CHARACTERISTICS
Figure 1. Diode Capacitance versus Reverse Voltage
Figure 2. Normalized Diode Capacitance versus
Junction Temperature
Figure 3. Reverse Current versus Reverse Bias
Voltage
Figure 4. Figure of Merit versus Reverse Voltage
V
R
, REVERSE VOLTAGE (VOLTS)
1.0 2.00.2 10
3020
1.0
2.0
5.0
10
1000
50
20
100
500
5.0
0.5
0.1
200
C
T
, DIODE CAPACITANCE (pF)
T
A
= 25°C
f = 1.0 MHz
MMBV2109LT1/MV2109
1.040
1.030
1.020
1.010
1.000
0.990
0.980
T
J
, JUNCTION TEMPERATURE (°C)
+125−75 −25 0 +25 +50−50 +75
NORMALIZED DIODE CAPACITANCE
+100
0.970
0.960
V
R
= 2.0 Vdc
V
R
= 4.0 Vdc
V
R
= 30 Vdc
100
50
20
10
5.0
0.01
V
R
, REVERSE VOLTAGE (VOLTS)
5.0 10 2015 25
I
30
, REVERSE CURRENT (nA)
R
0.02
0.05
0.10
0.20
0.50
1.0
2.0
T
A
= 125°C
T
A
= 75°C
T
A
= 25°C
100
200
500
1000
5000
2000
1.0 2.0 5.0 7.0
10
3.0
20
V
R
, REVERSE VOLTAGE (VOLTS)
Q, FIGURE OF MERIT
2000
1000
200
500
300
100
f, FREQUENCY (MHz)
10
30 50 70
Q, FIGURE OF MERIT
100
3000
50
30
20
10
20 200 250
T
A
= 25°C
f = 50 MHz
T
A
= 25°C
V
R
= 4.0 Vdc
Figure 5. Figure of Merit versus Frequency
MMBV2105LT1/MV2105
MMBV2101LT1/MV2101
3.00.3
0
10
20
50
300
3000
30
30
MMBV2101LT1/MV2101
MMBV2109LT1
5000
MMBV2101LT1/MV2101
MMBV2109LT1/MV2109
NORMALIZED TO C
T
at T
A
= 25°C
V
R
= (CURVE)
P1-P3P4-P5

MV2109G

Mfr. #:
Buy MV2109G
Manufacturer:
ON Semiconductor
Description:
Varactor Diodes 30V 29.7pF
Lifecycle:
New from this manufacturer.
Delivery:
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