VQ3001J/P
Vishay Siliconix
Document Number: 70221
S-04279—Rev. D, 16-Jul-01
www.vishay.com
11-5
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED) P-CHANNEL
0 1000 2000 3000 4000 5000
Gate Charge
Q
g
– Total Gate Charge (pC)
V
DS
= –15 V
I
D
= –1 A
V
DS
= –24 V
I
D
= –1 A
–18
–15
–12
–9
–6
–3
0
0.75
0.90
1.05
1.20
1.35
1.50
1.65
–50 –25 0 25 50 75 100 125 150
On-Resistance vs. Junction Temperature
V
GS
= –4.5 V
I
D
= –0.5 A
T
J
– Junction Temperature (_C)
V
GS
= –10 V
I
D
= –0.1 A
–2.0
–1.6
–1.2
–0.8
–0.4
0
0 –1 –2 –3 –4 –5
Output Characteristics Transfer Characteristics
V
DS
– Drain-to-Source Voltage (V)
V
GS
= –10 V
–5 V
–8 V
–7 V
–6 V
V
GS
– Gate-to-Source Voltage (V)
–1000
–800
–600
–400
–200
0
0 –2 –4 –6 –8 –10
T
J
= –55_C
25_C
125_C
–4 V
–9 V
Source-Drain Diode Forward Voltage
–1.0 –2.0 –3.0 –4.0
–10 K
–1 K
–1
–100
–10
V
SD
– Source-to-Drain Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
Capacitance
175
150
125
100
75
50
25
0
0 –5 –10 –15 –20 –25 –30
C
rss
C
oss
C
iss
V
GS
= 0 V
f = 1 MHz
0
T
J
= 25_C
T
J
= 150_C
I
D
– Drain Current (A)
I
D
– Drain Current (mA)
C – Capacitance (pF)
V
GS
– Gate-to-Source Voltage (V)
r
DS(on)
– On-Resistance ( Ω )
(Normalized)
I
S
– Source Current (mA)
