2DD2656-7 Datasheet 2DD2656-7 | P1-P3

2DD2656

Document number: DS31638 Rev. 2 - 2

1 of 4

www.diodes.com

December 2008

2DD2656

NEW PRODUCT

LOW V

CE(SAT)

NPN SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Low Collector-Emitter Saturation Voltage

• Ideal for Low Power Amplification and Switching

• Complementary PNP Type Available (2DB1694)

• Ultra-Small Surface Mount Package

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green Device" (Note 2)

Mechanical Data

• Case: SOT-323

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.

Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Marking Information: See Page 3

• Ordering Information: See Page 3

• Weight: 0.006 grams (approximate)

Maximum Ratings @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage

V

CBO

30 V

Collector-Emitter Voltage

V

CEO

30 V

Emitter-Base Voltage

V

EBO

6 V

Collector Current - Continuous

I

C

1 A

Peak Pulse Collector Current

I

CM

2 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 3) @ T

A

= 25°C P

D

300 mW

Thermal Resistance, Junction to Ambient (Note 3) @ T

A

= 25°C

R

θ

JA

417

°C/W

Power Dissipation (Note 4) @ T

A

= 25°C P

D

500 mW

Thermal Resistance, Junction to Ambient (Note 4) @ T

A

= 25°C

R

θ

JA

250

°C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C

Electrical Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Conditions

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

V

(

BR

)

CBO

30

⎯ ⎯

V

I

C

= 10μA, I

E

= 0

Collector-Emitter Breakdown Voltage (Note 5)

V

(

BR

)

CEO

30

⎯ ⎯

V

I

C

= 1mA, I

B

= 0

Emitter-Base Breakdown Voltage

V

(

BR

)

EBO

6

⎯ ⎯

V

I

E

= 10μA, I

C

= 0

Collector Cut-Off Current

I

CBO

⎯ ⎯

0.1

μA

V

CB

= 15V, I

E

= 0

Emitter Cut-Off Current

I

EBO

⎯ ⎯

0.1

μA

V

EB

= 6V, I

C

= 0

ON CHARACTERISTICS (Note 5)

Collector-Emitter Saturation Voltage

V

CE

(

SAT

)

⎯

100 350 mV

I

C

= 500mA, I

B

= 25mA

DC Current Gain

h

FE

270

⎯

680

⎯

V

CE

= 2V, I

C

= 100mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

C

obo

⎯

5

⎯

pF

V

CB

= 10V, I

E

= 0,

f = 1MHz

Current Gain-Bandwidth Product

f

T

⎯

270

⎯

MHz

V

CE

= 2V, I

C

= 100mA,

f = 100MHz

Notes: 1. No purposefully added lead.

2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB with minimum recommended pad layout.

4. Device mounted on FR-4 PCB with 1 inch

2

copper pad layout.

5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

Top View Device Schematic

E

B

C

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2DD2656

Document number: DS31638 Rev. 2 - 2

2 of 4

www.diodes.com

December 2008

2DD2656

NEW PRODUCT

0

0.1

0.2

25

50

75 100 125

150

175

200

P

,

P

O

WE

R

DISSI

P

A

T

I

O

N (W)

D

T , AMBIENT TEMPERATURE (°C)

Fig. 1 Power Dissipation vs. Ambient Temperature

A

0.3

0.4

0.5

0.6

0

(Note 3)

(Note 4)

0

0.2

0.4

0.6

0.8

1.0

01 2 3 45

V , COLLECTOR-EMITTER VOLTAGE (V)

CE

Fig. 2 Typical Collector Current

vs. Collector-Emitter Voltage

I,

C

O

LLE

C

T

O

R

C

U

R

EN

T

(A)

C

I = 1mA

B

I = 2mA

B

I = 3mA

B

I = 4mA

B

I = 5mA

B

0.1 1 10 100 1,000 10,000

I , COLLECTOR CURRENT (mA)

C

Fig. 3 Typical DC Current Gain vs. Collector Current

10

100

10,000

h, D

C

U

R

E

N

T

G

AI

N

FE

1,000

T = 150°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

A

V = 2V

CE

0.1 1 10 100 1,000 10,000

I , COLLECTOR CURRENT (mA)

C

Fig. 4 Typical Collector-Emitter Saturation Voltage

vs. Collector Current

0.01

0.1

1

V,

C

O

LLE

C

T

O

R

-EMI

T

E

R

SATURATION

CE(SAT)

VOLTAGE (V)

I/I = 20

CB

T = 85°C

A

T = 25°C

A

T = -55°C

A

T = 150°C

A

0.1 1 10 100 1,000 10,000

I , COLLECTOR CURRENT (mA)

C

Fig. 5 Typical Base-Emitter Turn-On Voltage

vs. Collector Current

0

0.2

0.4

0.6

0.8

1.0

V , BASE-EMI

T

E

R

T

U

R

N-

O

N V

O

L

T

A

G

E (V)

BE(ON)

1.2

T = 150°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

A

V = 2V

CE

1 10 100 1,000 10,000

I , COLLECTOR CURRENT (mA)

C

Fig. 6 Typical Base-Emitter Saturation Voltage

vs. Collector Current

0.1

0.2

0.4

0.6

0.8

1.0

1.

2

V , BASE-EMI

T

E

R

SA

T

U

R

A

T

I

O

N V

O

L

T

A

G

E (V)

BE(SAT)

0

T = 150°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

A

I = 20

CB

/I

2DD2656

Document number: DS31638 Rev. 2 - 2

3 of 4

www.diodes.com

December 2008

2DD2656

NEW PRODUCT

0.1 1 10 100

V , REVERSE VOLTAGE (V)

R

Fig. 7 Typical Capacitance Characteristics

1

10

1,000

C

A

P

A

C

I

T

A

N

C

E (p

F

)

100

C

ibo

C

obo

f = 1MHz

Ordering Information (Note 6)

Part Number Case Packaging

2DD2656-7 SOT-323 3000/Tape & Reel

Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015

Code V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Package Outline Dimensions

SOT-323

Dim Min Max Typ

A 0.25 0.40 0.30

B 1.15 1.35 1.30

C 2.00 2.20 2.10

D - - 0.65

G 1.20 1.40 1.30

H 1.80 2.20 2.15

J 0.0 0.10 0.05

K 0.90 1.00 1.00

L 0.25 0.40 0.30

M 0.10 0.18 0.11

α

0° 8° -

All Dimensions in mm

RN1 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: V = 2008)

M = Month (ex: 9 = September)

A

M

J

L

D

B

C

H

K

G

RN1

YM

2DD2656-7

2DD2656-7

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