USBUF01P6

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USBUF01P6
Current FCC regulations requires that class B computing devices meet specified maximum levels for both
radiated and conducted EMI.
- Radiated EMI covers the frequency range from 30MHz to 1GHz.
- Conducted EMI covers the 450kHz to 30MHz range.
For the types of devices utilizing the USB, the most difficult test to pass is usually the radiated EMI test. For
this reason the USBUF01P6 device is aiming to minimize radiated EMI.
The differential signal (D+ and D-) of the USB does not contribute significantly to radiated or conducted
EMI because the magnetic field of both conductors cancels each other.
The inside of the PC environment is very noisy and designers must minimize noise coupling from the
different sources. D+ and D- must not be routed near high speed lines (clocks spikes).
Induced common mode noise can be minimized by running pairs of USB signals parallel to each other and
running grounded guard trace on each side of the signal pair from the USB controller to the USBUF device.
If possible, locate the USBUF device physically near the USB connectors. Distance between the USB con-
troller and the USB connector must be minimized.
The 47pF (Ct) capacitors are used to bypass high frequency energy to ground and for edge control, and
are placed between the driver chip and the series termination resistors (Rt). Both Ct and Rt should be
placed as close to the driver chip as is practicable.
The USBUF01P6 ensures a filtering protection against ElectroMagnetic and RadioFrequency Interferences
thanks to its low-pass filter structure. This filter is characterized by the following parameters :
- cut-off frequency
- Insertion loss
- high frequency rejection.
EMI FILTERING
f/Hz
1.0M 3.0M 10.0M 30.0M 100.0M 300.0M 1.0G 3.0G
-25.00
-22.50
-20.00
-17.50
-15.00
-12.50
-10.00
-7.50
-5.00
-2.50
0.00
dB
-
-
-
-
-
-
-
-
-
-
Fig. A3: USBUF01P6 typical attenuation curve.
TEST BOARD
50
Vg
50
UUx
Fig. A4: Measurement configuration
In addition to the requirements of termination and EMC compatibility, computing devices are required to be
tested for ESD susceptibility. This test is described in the IEC 61000-4-2 and is already in place in Europe.
This test requires that a device tolerates ESD events and remains operational without user intervention.
The USBUF01P6 is particularly optimized to perform ESD protection. ESD protection is based on the use
of device which clamps at:
VV RI
cl BR d PP
=+.
This protection function is splitted in 2 stages. As shown in figure A5, the ESD strikes are clamped by the
first stage S1 and then its remaining overvoltage is applied to the second stage through the resistor Rt.
Such a configuration makes the output voltage very low at the output.
ESD PROTECTION
USBUF01P6
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ESD Surge
Vinput
Voutput
Rload
Rg
Rt
S1
Rd
V
BR
V
BR
V
PP
Device
to be
protected
USBUF01P6
Rd
S2
Fig. A5: USBUF01P6 ESD clamping behavior
TEST BOARD
ESD
SURGE
15kV
Air
Discharge
Vin Vout
U
Fig. A6: Measurement board
To have a good approximation of the remaining voltages at both Vin and Vout stages, we give the typical
dynamical resistance value Rd. By taking into account these following hypothesis : Rt>Rd, Rg>Rd and
Rload>Rd, it gives these formulas:
Vinput
RV RV
R
gBR dg
g
=
+..
Voutput
R V R Vinput
R
tBR d
t
=
+..
The results of the calculation done for Vg=8kV, Rg=330 (IEC61000-4-2 standard), V
BR
=7V (typ.)
and Rd = 2 (typ.) give:
Vinput = 55.48 V
Voutput = 10.36 V
This confirms the very low remaining voltage across the device to be protected. It is also important to note
that in this approximation the parasitic inductance effect was not taken into account. This could be few
tenths of volts during few ns at the Vinput side. This parasitic effect is not present at the Voutput side due
the low current involved after the resistance Rt.
The measurements done hereafter show very clearly (Fig. A7) the high efficiency of the ESD protection :
- no influence of the parasitic inductances on Voutput stage
- Voutput clamping voltage very close to V
BR
(breakdown voltage) in the positive way
and -V
F
(forward voltage) in the negative way
USBUF01P6
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Fig. A7: Remaining voltage at both stages S1 (Vinput) and S2 (Voutput) during ESD surge.
a. Positive surge
b.Negative surge
Please note that the USBUF01P6 is not only acting for positive ESD surges but also for negative ones. For
these kinds of disturbances it clamps close to ground voltage as shown in Fig. A7b.

USBUF01P6

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Lifecycle:
New from this manufacturer.
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