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MMBT2907AWT1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. 8
1 Publication Order Number:
MMBT2907AWT1/D
MMBT2907AWT1G,
NSVMMBT2907AWT1G
General Purpose Transistor
PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−70/SOT−323 package which
is designed for low power surface mount applications.
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
−60 Vdc
Collector−Base Voltage V
CBO
−60 Vdc
Emitter−Base Voltage V
EBO
−5.0 Vdc
Collector Current − Continuous I
C
−600 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) T
A
= 25°C
P
D
150 mW
Thermal Resistance Junction−to−Ambient
R
q
JA
833 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
www.onsemi.com
Device Package Shipping
†
ORDERING INFORMATION
MARKING DIAGRAM
1
2
3
SC−70/SOT−323
CASE 419−04
STYLE 3
COLLECTOR
3
1
BASE
2
EMITTER
MMBT2907AWT1G SC−70
(Pb−Free)
3000 Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
20 MG
G
20 = Specific Device Code
M = Date Code
G = Pb−Free Package
1
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
NSVMMBT2907AWT1G SC−70
(Pb−Free)
3000 Tape &
Reel
MMBT2907AWT1G, NSVMMBT2907AWT1G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 2)
(I
C
= −10 mAdc, I
B
= 0)
V
(BR)CEO
−60 − Vdc
Collector−Base Breakdown Voltage
(I
C
= −10 mAdc, I
E
= 0)
V
(BR)CBO
−60 − Vdc
Emitter−Base Breakdown Voltage
(I
E
= −10 mAdc, I
C
= 0)
V
(BR)EBO
−5.0 − Vdc
Base Cutoff Current
(V
CE
= −30 Vdc, V
EB(off)
= −0.5 Vdc)
I
BL
− −50 nAdc
Collector Cutoff Current
(V
CE
= −30 Vdc, V
EB(off)
= −0.5 Vdc)
I
CEX
− −50 nAdc
ON CHARACTERISTICS
(3)
DC Current Gain (Note 2)
(I
C
= −0.1 mAdc, V
CE
= −10 Vdc)
(I
C
= −1.0 mAdc, V
CE
= −10 Vdc)
(I
C
= −10 mAdc, V
CE
= −10 Vdc)
(I
C
= −150 mAdc, V
CE
= −10 Vdc)
(I
C
= −500 mAdc, V
CE
= −10 Vdc)
H
FE
75
100
100
100
50
−
−
−
340
−
−
Collector−Emitter Saturation Voltage (Note 2)
(I
C
= −150 mAdc, I
B
= −15 mAdc)
(I
C
= −500 mAdc, I
B
= −50 mAdc)
V
CE(sat)
−
−
−0.4
−1.6
Vdc
Base−Emitter Saturation Voltage (Note 2)
(I
C
= −150 mAdc, I
B
= −15 mAdc)
(I
C
= −500 mAdc, I
B
= −50 mAdc)
V
BE(sat)
−
−
−1.3
−2.6
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= −50 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
f
T
200 − MHz
Output Capacitance
(V
CB
= −10 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
− 8.0 pF
Input Capacitance
(V
EB
= −2.0 Vdc, I
C
= 0, f = 1.0 MHz)
C
ibo
− 30 pF
SWITCHING CHARACTERISTICS
Turn−On Time
(V
CC
= −30 Vdc,
I
C
= −150 mAdc, I
B1
= −15 mAdc)
t
on
− 45
ns
Delay Time t
d
− 10
Rise Time t
r
− 40
Storage Time
(V
CC
= −6.0 Vdc, I
C
= −150 mAdc,
I
B1
= I
B2
= 15 mAdc)
t
s
− 80
Fall Time t
f
− 30
Turn−Off Time t
off
− 100
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
0
0
-16 V
200 ns
50
1.0 k
200
-30 V
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
+15 V -6.0 V
1.0 k 37
50
1N916
1.0 k
200 ns
-30 V
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
INPUT
Z
o
= 50 W
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
INPUT
Z
o
= 50 W
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit
MMBT2907AWT1G, NSVMMBT2907AWT1G
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 3. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
100
1000
10
1.0
T
J
= 150°C
25°C
-55°C
h
FE
, DC CURRENT GAIN
10 100 1000
V
CE
= 10 V
Figure 4. Collector Saturation Region
I
B
, BASE CURRENT (mA)
-0.4
-0.6
-0.8
-1.0
-0.2
V , COLLECTOR-EMITTER VOLTAGE (VOLTS)
0
CE
I
C
= -1.0 mA
-0.005
-10 mA
-0.01
-100 mA
-500 mA
-0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0
-2.0
-3.0
-5.0 -7.0 -10 -20
-30
-50
Figure 5. Turn−On Time
I
C
, COLLECTOR CURRENT
300
-5.0
Figure 6. Turn−Off Time
I
C
, COLLECTOR CURRENT (mA)
-5.0
t, TIME (ns)
t, TIME (ns)
200
100
70
50
30
20
10
7.0
5.0
3.0
-7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500
t
r
2.0 V
t
d
@ V
BE(off)
= 0 V
V
CC
= -30 V
I
C
/I
B
= 10
T
J
= 25°C
500
300
100
70
50
30
20
10
7.0
5.0
-7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500
200
t
f
t′
s
= t
s
- 1/8 t
f
V
CC
= -30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
P1-P3P4-P5

MMBT2907AWT1G

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Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 600mA 60V PNP
Lifecycle:
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