2N7002BK All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 17 June 2010 9 of 16
NXP Semiconductors
2N7002BK
60 V, 350 mA N-channel Trench MOSFET
I
D
= 300 mA; V
DD
=6V; T
amb
=25°C
Fig 14. Gate-source voltage as a function of gate
charge; typical values
Fig 15. Gate charge waveform definitions
V
GS
=0V
(1) T
amb
= 150 °C
(2) T
amb
=25°C
Fig 16. Source current as a function of source-drain voltage; typical values
Q
G
(nC)
0.0 0.80.60.2 0.4
017aaa047
2.0
3.0
1.0
4.0
5.0
V
GS
(V)
0.0
003aaa50
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
V
SD
(V)
0.0 1.20.80.4
017aaa048
0.4
0.8
1.2
I
S
(A)
0.0
(1) (2)
2N7002BK All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 17 June 2010 10 of 16
NXP Semiconductors
2N7002BK
60 V, 350 mA N-channel Trench MOSFET
8. Test information
Fig 17. Duty cycle definition
t
1
t
2
P
t
006aaa812
duty cycle δ =
t
1
t
2
2N7002BK All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 17 June 2010 11 of 16
NXP Semiconductors
2N7002BK
60 V, 350 mA N-channel Trench MOSFET
9. Package outline
Fig 18. Package outline SOT23 (TO-236AB)
UNIT
A
1
max.
b
p
cD
E
e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
0.95
e
1.9
2.5
2.1
0.55
0.45
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
b
p
D
e
1
e
A
A
1
L
p
Q
detail X
H
E
E
w M
v M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT2
3

2N7002BKVL

Mfr. #:
Manufacturer:
Nexperia
Description:
MOSFET 2N7002BK/TO-236AB/REEL 11" Q3/
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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