MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN)
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3
0.04 0.2 2.00.1
0.06
0.4 1.0
4.0
I
C
, COLLECTOR CURRENT (AMP)
t, TIME (s)μ
2.0
1.0
0.8
0.6
0.4
0.2
t
s
Figure 2. Switching Times Test Circuit
t
r
t
d
@ V
BE(off)
= 0
PNP
NPN
4.00.6
Figure 3. Switching Times
V
2
APPROX
+8.0 V
0
≈ 6.0 k
SCOPE
V
CC
-30 V
R
C
51
For t
d
and t
r
, D
1
id disconnected
and V
2
= 0, R
B
and R
C
are varied
to obtain desired test currents.
For NPN test circuit, reverse diode,
polarities and input pulses.
25 ms
t
r
, t
f
≤ 10 ns
DUTY CYCLE = 1.0%
+ 4.0 V
R
B
& R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE I
B
≈ 100 mA
MSD6100 USED BELOW I
B
≈ 100 mA
V
1
APPROX
-12 V
TUT
R
B
D
1
≈ 150
t
f
V
CC
= 30 V
I
C
/I
B
= 250
I
B1
= I
B2
T
J
= 25°C
t, TIME (ms)
1.0
0.01
0.01
0.5
0.2
0.1
0.05
0.02
r(t), TRANSIENT THERMAL RESISTANCE
0.05 1.0 2.0 5.0 10 20 50 100 200 1000500
q
JC
(t) = r(t) q
JC
q
JC
= 3.12°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
q
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
0.2
0.05
0.01
SINGLE PULSE
0.1
0.7
0.3
0.07
0.03
0.02 0.1 0.50.2
Figure 4. Thermal Response (MJE700, 800 Series)
0.03 3.0 30 3000.3
(NORMALIZED)
10
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1
100
2.0
5.0
0.5
Figure 5. MJE700 Series
MJE702, 703
MJE700
dc
1.0
3.0
1.0ms
70503020107.05.0
100ms
T
J
= 150°C
I
C
, COLLECTOR CURRENT (AMP)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1
Figure 6. MJE800 Series
I
C
, COLLECTOR CURRENT (AMP)
10070503020107.05.0
0.2
0.7
0.3
7.0
10
2.0
5.0
0.5
1.0
3.0
0.2
0.7
0.3
7.0
5.0ms
BONDING WIRE LIMITED
THERMALLY LIMITED
@ T
C
= 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
100ms
1.0ms
5.0ms
dc
T
J
= 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ T
C
= 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
MJE802, 803
MJE800
ACTIVE−REGION SAFE−OPERATING AREA
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 5 and 6 are based on T
J(pk)
= 150_C;
T
C
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided T
J(pk)
< 150_C. T
J(pk)
may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
