DPG60C300HJ

DPG60C300HJ
Low Loss and Soft Recovery
High Performance Fast Recovery Diode
Common Cathode
HiPerFRED²
1 2
3
Part number
DPG60C300HJ
Backside: isolated
FAV
rr
tns35
RRM
30
300
=
V= V
I= A
2x
Features / Advantages: Applications: Package:
Planar passivated chips
Very low leakage current
Very short recovery time
Improved thermal behaviour
Very low Irm-values
Very soft recovery behaviour
Avalanche voltage rated for reliable operation
Soft reverse recovery for low EMI/RFI
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode
Rectifiers in switch mode power
supplies (SMPS)
Uninterruptible power supplies (UPS)
ISOPLUS247
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
Soldering pins for PCB mounting
Backside: DCB ceramic
Reduced weight
Advanced power cycling
Isolation Voltage: V~
3600
IXYS reserves the right to change limits, conditions and dimensions.
20131125aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG60C300HJ
n
s
3
A
T
VJ
C
reverse recovery time
A
8.5
35
65
n
s
I
RM
max. reverse recovery current
I
F
=A;30
25
T=125°C
VJ
-di
F
=A/µs200/dtt
rr
V
R
=V200
T
VJ
C25
T=125°C
VJ
V = V
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
1.26
R 1.05 K/
W
R
min.
30
V
RSM
V
1T = 25°C
VJ
T = °C
VJ
m
A
0.2V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
140
P
tot
145
W
T = 25°C
C
R K/
W
30
300
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions
Uni
t
1.54
T = 25°C
VJ
150
V
F0
V
0.61T = °C
VJ
175
r
F
9.6
m
V
0.96T = °C
VJ
I = A
F
V
30
1.26
I = A
F
60
I = A
F
60
threshold voltage
slope resistance
for power loss calculation only
µ
A
150
V
RRM
V
300
max. repetitive reverse blocking voltage
T = 25°C
VJ
C
J
60
j
unction capacitance
V = V150 T = 25°Cf = 1 MHz
R
VJ
p
F
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current
V = 0 V
R
T = °C
VJ
175
450
A
300
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Fast Diode
300
0.25
IXYS reserves the right to change limits, conditions and dimensions.
20131125aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG60C300HJ
Ratings
Product Mar
k
in
g
Date Code
Part No.
Logo
IXYS
abcd
Assembly Code
Zyyww
Assembly Line
ISOPLUS®
XXXXXXXXX
D
P
G
60
C
300
HJ
Part number
Diode
HiPerFRED
extreme fast
Common Cathode
ISOPLUS247 (3)
=
=
=
DPG60C300QB TO-3P (3) 300
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
T
VJ
°C175
virtual junction temperature
-55
Weight g6
Symbol Definition typ. max.min.Conditions
operation temperature
Unit
F
C
N120
mounting force with clip
20
V V
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
2.7
4.1
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
70 A
per terminal
150-55
terminal to terminal
DPG60C300PC
DPF60C300HB
TO-263AB (D2Pak) (2)
TO-247AD (3)
300
300
DPG80C300HB TO-247AD (3) 300
ISOPLUS247
Similar Part Package Voltage class
DPG60C300HB TO-247AD (3) 300
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
1
)
50/60 Hz, RMS; I 1 mA
ISOL
DPG60C300HJ 505494Tube 30DPG60C300HJStandard
3600
ISOL
T
stg
°C150
storage temperature
-55
3000
threshold voltage
V0.61
m
V
0 max
R
0 max
slope resistance *
7
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Fast
Diode
175 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions.
20131125aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved

DPG60C300HJ

Mfr. #:
Manufacturer:
Littelfuse
Description:
Diodes - General Purpose, Power, Switching 60 Amps 300V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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