IRF530SPBF Datasheet IRF530SPBF, IRF530STRLPBF, IRF530STRRPBF | P1-P3

Document Number: 91020

www.vishay.com

S11-1046-Rev. C, 30-May-11 1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Power MOSFET

IRF530S, SiHF530S

Vishay Siliconix

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• 175 °C Operating Temperature

•Fast Switching

• Ease of Paralleling

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D

2

PAK (TO-263) is a surface mount power package

capable of accommodating die size up to HEX-4. It provides

the highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

D

2

PAK (TO-263) is suitable for high current applications

because of its low internal connection resistance and can

dissipate up to 2.0 W in a typical surface mount application.

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

DD

= 25 V, starting T

J

= 25 °C, L = 528 μH, R

g

= 25 , I

AS

= 14 A (see fig. 12).

c. I

SD

 14 A, dI/dt  140 A/μs, V

DD

 V

DS

, T

J

 175 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

PRODUCT SUMMARY

V

DS

(V) 100

R

DS(on)

()V

GS

= 10 V 0.16

Q

g

(Max.) (nC) 26

Q

gs

(nC) 5.5

Q

gd

(nC) 11

Configuration Single

N-Channel MOSFET

G

D

S

D

2

PAK (TO-263)

G

D

S

ORDERING INFORMATION

Package

D

2

PAK (TO-263) D

2

PAK (TO-263) D

2

PAK (TO-263)

Lead (Pb)-free and Halogen-free SiHF530S-GE3

SiHF530STRL-GE3

a

SiHF530STRR-GE3

a

Lead (Pb)-free

IRF530SPbF

IRF530STRLPbF

a

IRF530STRRPbF

a

SiHF530S-E3

SiHF530STL-E3

a

SiHF530STR-E3

a

ABSOLUTE MAXIMUM RATINGS T

C

= 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage

V

DS

100

V

Gate-Source Voltage

V

GS

± 20

Continuous Drain Current V

GS

at 10 V

T

C

= 25 °C

I

D

14

A

T

C

= 100 °C

10

Pulsed Drain Current

a

I

DM

56

Linear Derating Factor 0.59

W/°C

Linear Derating Factor (PCB Mount)

e

0.025

Single Pulse Avalanche Energy

b

E

AS

69 mJ

Avalanche Current

a

I

AR

14 A

Repetitive Avalanche Energy

a

E

AR

8.8 mJ

Maximum Power Dissipation

T

C

= 25 °C

P

D

88

W

Maximum Power Dissipation (PCB Mount)

e

T

A

= 25 °C

3.7

Peak Diode Recovery dV/dt

c

dV/dt 5.5 V/ns

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to + 175

°C

Soldering Recommendations (Peak Temperature) for 10 s

300

d

* Pb containing terminations are not RoHS compliant, exemptions may apply

www.vishay.com Document Number: 91020

2 S11-1046-Rev. C, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRF530S, SiHF530S

Vishay Siliconix

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width  300 μs; duty cycle  2 %.

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

thJA

-62

°C/W

Maximum Junction-to-Ambient

(PCB Mount)

a

R

thJA

-40

Maximum Junction-to-Case (Drain) R

thJC

-1.7

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0, I

D

= 250 μA 100 - - V

V

DS

Temperature Coefficient V

DS

/T

J

Reference to 25 °C, I

D

= 1 mA - 0.12 - V/°C

Gate-Source Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA 2.0 - 4.0 V

Gate-Source Leakage I

GSS

V

GS

= ± 20 V - - ± 100 nA

Zero Gate Voltage Drain Current I

DSS

V

DS

= 100 V, V

GS

= 0 V - - 25

μA

V

DS

= 80 V, V

GS

= 0 V, T

J

= 150 °C - - 250

Drain-Source On-State Resistance R

DS(on)

V

GS

= 10 V I

D

= 8.4 A

b

- - 0.16 

Forward Transconductance g

fs

V

DS

= 50 V, I

D

= 8.4 A

b

5.1 - - S

Dynamic

Input Capacitance C

iss

V

GS

= 0 V,

V

DS

= 25 V,

f = 1.0 MHz, see fig. 5

- 670 -

pFOutput Capacitance C

oss

- 250 -

Reverse Transfer Capacitance C

rss

-60-

Total Gate Charge Q

g

V

GS

= 10 V

I

D

= 14 A, V

DS

= 80 V,

see fig. 6 and 13

b

--26

nC Gate-Source Charge Q

gs

--5.5

Gate-Drain Charge Q

gd

--11

Turn-On Delay Time t

d(on)

V

DD

= 50 V, I

D

= 14 A,

R

g

= 12 , R

D

= 3.6 , see fig. 10

b

-10-

ns

Rise Time t

r

-34-

Turn-Off Delay Time t

d(off)

-23-

Fall Time t

f

-24-

Internal Drain Inductance L

D

Between lead,

6 mm (0.25") from

package and center of

die contact

-4.5-

nH

Internal Source Inductance L

S

-7.5-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

S

MOSFET symbol

showing the

integral reverse

p - n junction diode

--14

A

Pulsed Diode Forward Current

a

I

SM

--56

Body Diode Voltage V

SD

T

J

= 25 °C, I

S

= 14 A, V

GS

= 0 V

b

--2.5V

Body Diode Reverse Recovery Time t

rr

T

J

= 25 °C, I

F

= 14 A, dI/dt = 100 A/μs

b

- 150 280 ns

Body Diode Reverse Recovery Charge Q

rr

- 0.85 1.7 μC

Forward Turn-On Time t

on

Intrinsic turn-on time is negligible (turn-on is dominated by L

S

and L

D

)

D

S

G

S

D

G

Document Number: 91020 www.vishay.com

S11-1046-Rev. C, 30-May-11 3

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRF530S, SiHF530S

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Fig. 1 - Typical Output Characteristics, T

C

= 25 °C

Fig. 2 - Typical Output Characteristics, T

C

= 175 °C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

91020_01

20 µs Pulse Width

T

C

= 25 °C

4.5 V

V

DS

, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

Bottom

To p

V

GS

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

10

1

10

0

10

-1

10

0

10

1

V

DS

,

Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

4.5 V

20 µs Pulse Width

T

C

= 175 °C

91020_02

Bottom

To p

V

GS

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

10

1

10

0

10

-1

10

0

10

1

20 µs Pulse Width

V

DS

= 50 V

I

D

, Drain Current (A)

V

GS

,

Gate-to-Source Voltage (V)

5678910

4

25 °C

175 °C

91020_03

10

1

10

0

I

D

= 14 A

V

GS

= 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

- 60- 40 - 20 0 20 40 60 80 100120 140 160

T

J

,

Junction Temperature (°C)

R

DS(on)

, Drain-to-Source On Resistance

(Normalized)

91020_04

3.5

180

IRF530SPBF

IRF530SPBF

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