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STP80NF06
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
Electrical ch
aracteristics
STP80NF06 - STB80NF06 - STW80NF06
4/14
2 Electrical
characteristics
(T
CASE
=25°C unless otherwise specified)
T
able 3.
On/off states
Symbol
P
arameter
T
est conditions
Min.
T
yp.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown v
oltage
I
D
= 250 µA, V
GS
= 0
60
V
I
DSS
Zero gate voltage
Drain current (V
GS
= 0)
V
DS
= Max rat
ing
1
µA
V
DS
=Max rating,
T
C
=125°C
10
µA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ±20V
±100
nA
V
GS(th)
Gate threshold v
oltage
V
DS
= V
GS
, I
D
= 250µA
2
3
4
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V
, I
D
= 40A
0.0065
0.008
Ω
T
able 4.
Dynamic
Symbol
P
arameter
T
est conditions
Min.
T
yp.
Max.
Unit
g
fs
(1)
1.
Pulsed: Pulse duration =
300 µs, duty cycle 1.5%
F
orward transconductance
V
DS
= 2.5V
,
I
D
=18A
20
S
C
iss
Input capacitance
V
DS
= 25V
,
f = 1 MHz,
V
GS
= 0
3850
pF
C
oss
Output capacitance
800
pF
C
rss
Re
v
erse transf
er
capacitance
250
pF
Q
g
T
otal g
ate charge
V
DD
= 80V
, I
D
= 80A,
V
GS
= 10V
115
150
nC
Q
gs
Gate-source ch
arge
24
nC
Q
gd
Gate-dra
in charge
46
nC
T
able 5.
Switchi
ng times
Symbol
P
arameter
T
est conditions
Min.
T
yp.
Max.
Unit
t
d(on)
t
r
T
urn-on delay time
Rise time
V
DD
= 27V
, I
D
= 40A
R
G
=4
.
7
Ω
V
GS
= 10V
(see Figure 13)
25
85
ns
ns
t
d(off)
t
f
T
ur
n-off-delay time
F
a
ll time
V
DD
= 27V
, I
D
= 40A,
R
G
=4
.
7
Ω,
V
GS
= 10V
(see Figure 13)
70
25
ns
ns
t
d(off)
t
f
t
c
Off-voltage Rise Time
F
a
ll Time
Cross-o
ver Ti
me
Vclamp =44V
, I
D
=80A
R
G
=4
.
7
Ω,
V
GS
= 10V
(see Figure 15)
85
75
110
ns
ns
ns
STP80NF06 - STB80NF06
- STW80NF06
Electrical character
istics
5/14
T
able 6.
Sourc
e drain diode
Symbol
P
arameter
T
est conditions
Min.
T
yp.
Max
Un
it
I
SD
Source-drain current
80
A
I
SDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current (pulsed)
320
A
V
SD
(2)
2.
Pulsed: Pulse duration =
300 µs, duty cycle 1.5%
F
orward on voltage
I
SD
= 80A, V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Re
verse reco
very time
Rev
erse recovery charge
Re
verse reco
very current
I
SD
= 80A, V
DD
= 50V
di/dt = 100A/µs,
T
j
= 150°C
(see Figure 15)
80
250
6.4
ns
nC
A
Electrical ch
aracteristics
STP80NF06 - STB80NF06 - STW80NF06
6/14
2.1 Electrical
characteri
stics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
Figure 3.
Output charact
eristics
Figu
re 4.
T
ransfer characte
ristics
Figure 5.
T
ransconductance
Figure 6.
Static drain-sour
ce on resistance
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
STP80NF06
Mfr. #:
Buy STP80NF06
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 60 Volt 80 Amp
Lifecycle:
New from this manufacturer.
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Products related to this Datasheet
STP80NF06
STW80NF06