Characteristics STPS30H60C
4/11 Doc ID 12123 Rev 3
Figure 7. Relative variation of thermal
impedance junction to case versus
pulse duration
Figure 8. Relative variation of thermal
impedance junction to case versus
pulse duration
Z/R
th(j-c) th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00
δ=0.1
δ=0.2
δ=0.5
Single pulse
T
δ
=tp/T
tp
t (s)
p
TO-220AB,TO-247 D PAK, I PAK
22
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
δ=0.1
δ=0.2
δ=0.5
Single pulse
T
δ
=tp/T
tp
TO-220FPAB
t (s)
p
Z/R
th(j-c) th(j-c)
Figure 9. Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
Figure 10. Junction capacitance versus
reverse voltage applied
(typical values, per diode)
I (mA)
R
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
0 5 10 15 20 25 30 35 40 45 50 55 60
T
j
=125°C
T
j
=100°C
T
j
=75°C
T
j
=50°C
T
j
=25°C
T
j
=150°C
V (V)
R
C(nF)
0.1
1.0
10.0
1 10 100
F=1MHz
V
osc
=30mV
RMS
T
j
=25°C
V (V)
R
Figure 11. Forward voltage drop versus
forward current (per diode)
Figure 12. Thermal resistance junction to
ambient versus copper surface
under tab
I (A)
FM
1
10
100
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
T
J
=25 °C
Maximum values
T
J
=125 °C
Maximum values
T
J
=125 °C
Maximum values
T
J
=125 °C
Typical values
T
J
=125 °C
Typical values
V (V)
FM
0
10
20
30
40
50
60
70
80
0 5 10 15 20 25 30 35 40
S(cm²)
R (°C/W)
th(j-a)
epoxy printed board FR4, copper thickness = 35 µm
D PAK
2
