BC549C Datasheet BC549C, BC549CG, BC550C | P1-P3

March, 2007 − Rev. 2

1 Publication Order Number:

BC550C/D

BC549C, BC550C

Low Noise Transistors

NPN Silicon

Features

• These are Pb−Free Devices*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage

BC549C

BC550C

V

CEO

30

45

Vdc

Collector−Base Voltage

BC549C

BC550C

V

CBO

30

50

Vdc

Emitter−Base Voltage V

EBO

5.0 Vdc

Collector Current − Continuous I

C

100 Vdc

Total Device Dissipation @ T

A

= 25°C

Derate above = 25°C

P

D

625

5.0

mW

mW/°C

Total Device Dissipation @ T

A

= 25°C

Derate above = 25°C

P

D

1.5

12

W

mW/°C

Operating and Storage Junction

Temperature Range

T

J

, T

stg

−55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient

R

q

JA

200 °C/W

Thermal Resistance, Junction−to−Case

R

q

JC

83.3 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device Package Shipping

ORDERING INFORMATION

BC5xyC = Device Code

x = 4 or 5

y = 9 or 0

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

MARKING DIAGRAM

BC549CG TO−92

(Pb−Free)

5000 Units / Bulk

BC550CG TO−92

(Pb−Free)

5000 Units / Bulk

(Note: Microdot may be in either location)

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BC5x

yC

AYWW G

G

COLLECTOR

1

2

BASE

3

EMITTER

1

2

3

STRAIGHT LEAD

BULK PACK

TO−92

CASE 29

STYLE 17

BC549C, BC550C

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2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(I

C

= 10 mAdc, I

B

= 0)

V

(BR)CEO

45 − −

Vdc

Collector−Base Breakdown Voltage

(I

C

= 10 mAdc, I

E

= 0)

V

(BR)CBO

50 − −

Vdc

Emitter−Base Breakdown Voltage

(I

E

= 10 mAdc, I

C

= 0)

V

(BR)EBO

5.0 − −

Vdc

Collector Cutoff Current

(V

CB

= 30 V, I

E

= 0)

(V

CB

= 30 V, I

E

= 0, T

A

= +125°C)

I

CBO

−

15

5.0

nAdc

mAdc

Emitter Cutoff Current

(V

EB

= 4.0 Vdc, I

C

= 0)

I

EBO

− − 15

nAdc

ON CHARACTERISTICS

DC Current Gain

(I

C

= 10 mAdc, V

CE

= 5.0 Vdc)

(I

C

= 2.0 mAdc, V

CE

= 5.0 Vdc)

h

FE

100

420

270

500

−

800

−

Collector−Emitter Saturation Voltage

(I

C

= 10 mAdc, I

B

= 0.5 mAdc)

(I

C

= 10 mAdc, I

B

= see note 1)

(I

C

= 100 mAdc, I

B

= 5.0 mAdc, see note 2)

V

CE(sat)

−

0.075

0.3

0.25

0.6

Vdc

Base−Emitter Saturation Voltage

(I

C

= 100 mAdc, I

B

= 5.0 mAdc)

V

BE(sat)

− 1.1 −

Vdc

Base−Emitter On Voltage

(I

C

= 10 mAdc, V

CE

= 5.0 Vdc)

(I

C

= 100 mAdc, V

CE

= 5.0 Vdc)

(I

C

= 2.0 mAdc, V

CE

= 5.0 Vdc)

V

BE(on)

−

0.55

0.52

0.55

0.62

−

0.7

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain — Bandwidth Product

(I

C

= 10 mAdc, V

CE

= 5.0 Vdc, f = 100 MHz)

f

T

− 250 −

MHz

Collector−Base Capacitance

(V

CB

= 10 Vdc, I

E

= 0, f = 1.0 MHz)

C

cbo

− 2.5 −

pF

Small−Signal Current Gain

(I

C

= 2.0 mAdc, V

CE

= 5.0 V, f = 1.0 kHz)

h

fe

450 600 900

−

Noise Figure

(I

C

= 200 mAdc, V

CE

= 5.0 Vdc, R

S

= 2.0 kW, f = 1.0 kHz)

(I

C

= 200 mAdc, V

CE

= 5.0 Vdc, R

S

= 100 kW, f = 1.0 kHz)

NF

1

NF

2

−

0.6

−

2.5

10

dB

1. I

B

is value for which I

C

= 11 mA at V

CE

= 1.0 V.

2. Pulse test = 300 ms − Duty cycle = 2%.

R

S

i

n

e

n

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

BC549C, BC550C

http://onsemi.com

3

2.0

1.5

1.0

0.2

0.3

0.4

0.6

0.8

2000.2 0.5 1.0 2.0 5.0 10 20 50 100

I

C

, COLLECTOR CURRENT (mAdc)

Figure 2. Normalized DC Current Gain

h

FE

, NORMALIZED DC CURRENT GAIN

V

CE

= 10 V

T

A

= 25°C

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

0.20.1 0.5 1.0 2.0 5.0 10 20 50 100

I

C

, COLLECTOR CURRENT (mAdc)

Figure 3. “Saturation” and “On” Voltages

V, VOLTAGE (VOLTS)

T

A

= 25°C

V

BE(sat)

@ I

C

/I

B

= 10

V

BE(on)

@ V

CE

= 10 V

V

CE(sat)

@ I

C

/I

B

= 10

400

20

30

40

60

80

100

200

300

0.5 1.00.7 2.0 5.0 7.0 10 20 50

I

C

, COLLECTOR CURRENT (mAdc)

Figure 4. Current−Gain — Bandwidth Product

f

T

, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)

C, CAPACITANCE (pF)

10

1.0

2.0

3.0

5.0

7.0

0.4 0.6 1.0 2.0 4.0 10 20 40

V

R

, REVERSE VOLTAGE (VOLTS)

Figure 5. Capacitance

V

CE

= 10 V

T

A

= 25°C

T

A

= 25°C

C

ib

C

ob

r

b

, BASE SPREADING RESISTANCE (OHMS)

170

160

150

140

130

120

100.1 0.2 0.5 1.0 2.0 5.0

I

C

, COLLECTOR CURRENT (mAdc)

Figure 6. Base Spreading Resistance

V

CE

= 10 V

f = 1.0 kHz

T

A

= 25°C

BC549C

BC549C

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