ZTX1149ASTZ

PNP SILICON PLANAR MEDIUM POWER

HIGH GAIN TRANSISTOR

ISSUE 1 - January 1997

FEATURES

*V

CEO

= - 25V

* 3 Amp Continuous Current

* 10 Amp Pulse Current

* Low Saturation Voltage

* High Gain

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL ZTX1149A UNIT

Collector-Base Voltage V

CBO

-30 V

Collector-Emitter Voltage V

CEO

-25 V

Emitter-Base Voltage V

EBO

-5 V

Peak Pulse Current I

CM

-10 A

Continuous Collector Current I

C

-3 A

Base Current I

B

-500 mA

Power Dissipation at T

amb

=25°C P

tot

1W

Operating and Storage Temperature

Range

T

j

:T

stg

-55 to +200 °C

ZTX1149A

C

B

E

E-Line

TO92 Compatible

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER SYMBOL UNIT CONDITIONS.

MIN. TYP. MAX.

Collector-Base

Breakdown Voltage

V

(BR)CBO

-30 -70 V

I

C

=-100µA

Collector-Emitter

Breakdown Voltage

V

(BR)CES

-25 -60 V

I

C

=-100µA

Collector-Emitter

Breakdown Voltage

V

(BR)CEO

-25 -60 V I

C

=-10mA *

Collector-Emitter

Breakdown Voltage

V

(BR)CEV

-25 -60 V

I

C

=-100µA, V

EB

=+1V

Emitter-Base Breakdown

Voltage

V

(BR)EBO

-5 -8.5 V

I

E

=-100µA

Collector Cut-Off Current I

CBO

-0.3 -100 nA V

CB

=-24V

Emitter Cut-Off Current I

EBO

-0.3 -100 nA V

EB

=-4V

Collector Emitter Cut-Off

Current

I

CES

-0.3 -100 nA V

CE

=-20V

Collector-Emitter

Saturation Voltage

V

CE(sat)

-45

-100

-140

-170

-200

-80

-170

-240

-260

-300

mV

mV

mV

mV

mV

I

C

=-0.1A, I

B

=-1.0mA*

I

C

=-0.5A, I

B

=-3mA*

I

C

=-1A, I

B

=-7mA*

I

C

=-2A, I

B

=-30mA*

I

C

=-3A, I

B

=-70mA*

Base-Emitter

Saturation Voltage

V

BE(sat)

-870 -1000 mV I

C

=-3A, I

B

=-70mA*

Base-Emitter Turn-On

Voltage

V

BE(on)

-800 -900 mV I

C

=-3A, V

CE

=-2V*

Static Forward Current

Transfer Ratio

h

FE

270

250

195

115

450

400

320

190

50

800

I

C

=-10mA, V

CE

=-2V*

I

C

=-0.5A, V

CE

=-2V*

I

C

=-2A, V

CE

=-2V*

I

C

=-5A, V

CE

=-2V*

I

C

=-10A, V

CE

=-2V*

Transition Frequency f

T

135 MHz I

C

=-50mA, V

CE

=-10V

f=50MHz

Output Capacitance C

cb

50 pF V

CB

=- 10V, f= 1MHz

Switching Times t

on

150 ns I

C

=-4A, I

B

=-40mA,

V

CC

=-10V

t

off

270 ns

I

C

=-4A, I

B

=±40mA,

V

CC

=-10V

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%.

ZTX1149A

1m 100

1m 100

1m 100 100m 100

1001m

1m 100

I

C

- Collector Current (A)

V

CE(sat)

v I

C

0

1.0

V

CE(sat)

- (V)

IC/IB=10

IC/IB=50

IC/IB=100

+25°C

-55°C

h

FE

- Typical Gain

750

+100°C

0

I

C

- Collector Current (A)

hFE v IC

+25°C

+100°C

V

BE(on)

- (V)

1.2

-55°C

0

I

C

- Collector Current (A)

VBE(on) v IC

+100°C

V

CE(sat)

- (V)

1.0

+25°C

0

I

C

- Collector Current (A)

V

CE(sat)

v I

C

+100°C

V

BE(sat)

- (V)

1.6

0.8

+25°C

0

I

C

- Collector Current (A)

VBE(sat) v IC

1s

100ms

I

C

- Collector Current (A)

10

DC

10m

V

CE

- Collector Emitter Voltage (V)

Safe Operating Area

10ms

1ms

100us

VCE=2V

+25°C

-55°C

IC/IB=100

VCE=2V

-55°C

IC/IB=100

10m 100m 1 10

0.2

0.4

0.6

0.8

IC/IB=200

10m 100m 1 10

0.2

0.4

0.6

0.8

10m 100m 1 10

250

500

10m 100m 1 10

0.4

0.8

10m 100m 1 10

0.4

1.2

110

100m

1

TYPICAL CHARACTERISTICS

ZTX1149A

ZTX1149ASTZ

Mfr. #:

Buy ZTX1149ASTZ

Manufacturer:

Diodes Incorporated

Description:

Bipolar Transistors - BJT PNP High Gain & Crnt

Lifecycle:

New from this manufacturer.

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