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IRGS4062DTRLPBF
P1-P3
P4-P6
P7-P9
P10-P12
IRGS/SL4062DPbF
www.irf.com
7
Fig. 26.
Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig 25.
Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-
006
1E-
005
0.0001
0.001
0.
01
0.1
t
1
, R
ectangular
Pul
se Durat
ion (
sec)
0.0001
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D =
0.50
0.02
0.01
0.05
SINGLE PUL
SE
( THERMAL RESPO
NSE )
Notes
:
1. Du
ty Fa
cto
r D = t1
/t2
2. P
eak Tj =
P dm x Zt
hjc +
Tc
Ri (°C/W)
τ
i (sec)
0.2329 0.000234
0.3631 0.007009
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
R
1
R
1
R
2
R
2
τ
τ
C
Ci
i
/
Ri
Ci=
τ
i
/
Ri
1E-
006
1E-
005
0.0001
0.001
0.01
0.
1
1
t
1
, R
ectangular
Pul
se Durat
ion (
sec)
0.0001
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D =
0.50
0.02
0.01
0.05
SINGLE PUL
SE
( THERMAL RESPO
NSE )
Notes
:
1. Du
ty Fa
cto
r D = t1
/t2
2. P
eak Tj =
P dm x Zt
hjc +
Tc
Ri (°C/W)
τ
i (sec)
0.476 0.000763
0.647 0.003028
0.406 0.023686
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
τ
C
Ci
i
/
Ri
Ci=
τ
i
/
Ri
IRGS/SL4062DPbF
8
www.irf.com
1K
VC
C
DU
T
0
L
L
Rg
80
V
DU
T
48
0
V
DC
4x
DUT
3
60V
L
Rg
VC
C
di
ode
c
la
m
p /
DU
T
DU
T /
DR
I
V
E
R
- 5V
Rg
VCC
DU
T
R =
V
CC
I
CM
Fig.C.T.1
- Gate Charge Circuit (turn-off)
Fig.C.T.2
- RBSOA Circuit
Fig.C.T.3
- S.C. SOA Circuit
Fig.C.T.4
- Switching Loss Circuit
Fig.C.T.5
- Resistive Load Circuit
Fig.C.T.6
- BVCES Filter Circuit
V
CC
IRGS/SL4062DPbF
www.irf.com
9
Fig. WF3
- Typ. Diode Recovery Waveform
@ T
J
= 175°C using Fig. CT.4
Fig. WF1
- Typ. Turn-off Loss Waveform
@ T
J
= 175°C using Fig. CT.4
Fig. WF2
- Typ. Turn-on Loss Waveform
@ T
J
= 175°C using Fig. CT.4
Fig. WF4
- Typ. S.C. Waveform
@ T
J
= 25°C using Fig. CT.3
-5
0
-4
0
-3
0
-2
0
-1
0
0
10
20
30
-
0.
15
-0.05
0.05
0.15
0.25
time
(
µ
S)
I
RR
(A)
Pe
a
k
I
RR
Q
RR
t
RR
10%
Pe a
k
I
RR
-100
0
100
200
300
400
500
600
-
5
.00
0
.00
5
.
0
0
1
0
.0
0
tim
e
(
µ
S
)
V
CE
(V
)
-50
0
50
100
150
200
250
300
I
CE
(A)
V
CE
I
CE
-100
0
100
200
300
400
500
600
-
0
.4
0
0
.
1
0
0
.6
0
Tim
e(
µs
)
V
CE
(V)
-5
0
5
1
0
1
5
2
0
2
5
3
0
E
OF
F
Los
s
5% V
CE
5% I
CE
90% I
CE
tf
V
CE
I
CE
-100
0
100
200
300
400
500
600
11.
70
11.
90
12.10
12.
30
Time (µ
s
)
V
CE
(V)
-10
0
10
20
30
40
50
60
E
ON
I
CE
C
90% t
est
10%
I
CE
5% V
CE
tr
V
CE
C
P1-P3
P4-P6
P7-P9
P10-P12
IRGS4062DTRLPBF
Mfr. #:
Buy IRGS4062DTRLPBF
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors IGBT DISCRETES
Lifecycle:
New from this manufacturer.
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