IRF7456TRPBF Datasheet IRF7456TRPBF, IRF7456PBF | P1-P3

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08/08/08

IRF7456PbF

SMPS MOSFET

HEXFET

®

Power MOSFET

l High Frequency DC-DC Converters

with Synchronous Rectification

Benefits

Applications

l Ultra-Low R

DS(on)

at 4.5V V

GS

l Low Charge and Low Gate Impedance to

Reduce Switching Losses

l Fully Characterized Avalanche Voltage

and Current

V

DSS

R

DS(on)

max I

D

20V 0.0065Ω 16A

Typical SMPS Topologies

l Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers

PD - 95249A

Notes  through  are on page 8

Absolute Maximum Ratings

Symbol Parameter Max. Units

V

DS

Drain-Source Voltage 20 V

V

GS

Gate-to-Source Voltage ± 12 V

I

D

@ T

A

= 25°C Continuous Drain Current, V

GS

@ 10V 16

I

D

@ T

A

= 70°C Continuous Drain Current, V

GS

@ 10V 13 A

I

DM

Pulsed Drain Current 130

P

D

@T

A

= 25°C Maximum Power Dissipation 2.5 W

P

D

@T

A

= 70°C Maximum Power Dissipation 1.6 W

Linear Derating Factor 0.02 W/°C

T

J

, T

STG

Junction and Storage Temperature Range -55 to + 150 °C

Parameter Max. Units

R

θJA

Maximum Junction-to-Ambient 50 °C/W

Thermal Resistance

SO-8

Top View

8

1

2

3

4

5

6

7

D

DG

S

A

S

A

l Lead-Free

IRF7456PbF

2 www.irf.com

S

D

G

Parameter Min. Typ. Max. Units Conditions

I

S

Continuous Source Current MOSFET symbol

(Body Diode)

––– –––

showing the

I

SM

Pulsed Source Current integral reverse

(Body Diode) 

––– –––

p-n junction diode.

V

SD

Diode Forward Voltage ––– ––– 1.2 V T

J

= 25°C, I

S

= 2.5A, V

GS

= 0V 

t

rr

Reverse Recovery Time ––– 48 72 ns T

J

= 25°C, I

F

= 2.5A

Q

rr

Reverse RecoveryCharge ––– 74 110 nC di/dt = 100A/µs



Diode Characteristics

2.5

130

A

Parameter Typ. Max. Units

E

AS

Single Pulse Avalanche Energy ––– 250 mJ

I

AR

Avalanche Current ––– 16 A

E

AR

Repetitive Avalanche Energy ––– 0.25 mJ

Avalanche Characteristics

Parameter Min. Typ. Max. Units Conditions

g

fs

Forward Transconductance 44 ––– ––– S V

DS

= 10V, I

D

= 16A

Q

g

Total Gate Charge ––– 41 62 I

D

= 16A

Q

gs

Gate-to-Source Charge ––– 9.7 15 nC V

DS

= 16V

Q

gd

Gate-to-Drain ("Miller") Charge ––– 18 27 V

GS

= 5.0V, 

t

d(on)

Turn-On Delay Time ––– 20 ––– V

DD

= 10V

t

r

Rise Time ––– 25 ––– I

D

= 1.0A

t

d(off)

Turn-Off Delay Time ––– 50 ––– R

G

= 6.0Ω

t

f

Fall Time ––– 52 ––– V

GS

= 4.5V 

C

iss

Input Capacitance ––– 3640 ––– V

GS

= 0V

C

oss

Output Capacitance ––– 1570 ––– V

DS

= 15V

C

rss

Reverse Transfer Capacitance ––– 330 ––– pF ƒ = 1.0MHz

Dynamic @ T

J

= 25°C (unless otherwise specified)

ns

Static @ T

J

= 25°C (unless otherwise specified)

I

GSS

I

DSS

Drain-to-Source Leakage Current

R

DS(on)

Static Drain-to-Source On-Resistance

Ω

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

Drain-to-Source Breakdown Voltage 20 ––– ––– V V

GS

= 0V, I

D

= 250µA

∆V

(BR)DSS

/∆T

J

Breakdown Voltage Temp. Coefficient

––– 0.024 ––– V/°C Reference to 25°C, I

D

= 1mA

––– 0.00470.0065 V

GS

= 10V, I

D

= 16A 

––– 0.00570.0075 V

GS

= 4.5V, I

D

= 13A 

––– 0.011 0.020 V

GS

= 2.8V, I

D

= 3.5A 

V

GS(th)

Gate Threshold Voltage 0.6 ––– 2.0 V V

DS

= V

GS

, I

D

= 250µA

––– ––– 20

µA

V

DS

= 16V, V

GS

= 0V

––– ––– 100 V

DS

= 16V, V

GS

= 0V, T

J

= 125°C

Gate-to-Source Forward Leakage ––– ––– 200 V

GS

= 12V

Gate-to-Source Reverse Leakage ––– ––– -200

nA

V

GS

= -12V

IRF7456PbF

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Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.1

1

10

100

1000

0.1 1 10 100

20µs PULSE WIDTH

T = 25 C

J

°

TOP

BOTTOM

VGS

15V

10V

4.5V

3.0V

2.7V

2.5V

2.25V

2.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

2.0V

1

10

100

1000

0.1 1 10 100

20µs PULSE WIDTH

T = 150 C

J

°

TOP

BOTTOM

VGS

15V

10V

4.5V

3.0V

2.7V

2.5V

2.25V

2.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

2.0V

Fig 4. Normalized On-Resistance

Vs. Temperature

-60 -40 -20 0 20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature( C)

R , Drain-to-Source On Resistance

(Normalized)

J

DS(on)

°

V =

I =

GS

D

10V

16A

2.0 2.2 2.4 2.6 2.8 3.0 3.2

V

GS

, Gate-to-Source Voltage (V)

0.1

1.0

10.0

100.0

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

Α

)

T

J

= 25°C

T

J

= 150°C

V

DS

= 15V

20µs PULSE WIDTH

IRF7456TRPBF

IRF7456TRPBF

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