IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area
Fig.9 Capacitance Curves Fig.10 Source Current vs. Source to Drain Voltage
Fig.11 Transient Thermal Impedance
V
DS
- Volts
1 10 100
I
D
- Amperes
0.1
1
10
100
Gate Charge - nCoulombs
0 25 50 75 100 125 150 175 200
V
GE
- Volts
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Volt
0.00 0.25 0.50 0.75 1.00 1.25 1.50
I
D
- Amperes
0
5
10
15
20
25
30
35
40
45
50
V
DS
- Volts
0 5 10 15 20 25
Capacitance - pF
0
500
1000
1500
2000
2500
3000
3500
4000
4500
Time - Seconds
0.00001 0.0001 0.001 0.01 0.1 1 10
Thermal Response - K/W
0.001
0.01
0.1
1
D=0.2
D=0.02
D=0.5
D=0.1
D=0.05
D=0.01
Single pulse
C
rss
C
oss
V
DS
= 250V
I
D
= 12.5A
I
G
= 10mA
500
10µs
100µs
1ms
10ms
100ms
Limited by R
DS(on)
C
iss
T
J
= 25°C
T
J
= 125°C
f = 1 Mhz
V
DS
= 25V
IXFH21N50 IXFH24N50 IXFH26N50
IXFM21N50 IXFM24N50 IXFM26N50
IXFT24N50 IXFT26N50
