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IR3312S

P1-P3P4-P6P7-P9P10-P12P13-P13
Features
• Load current feedback
• Programmable over current shutdown
• Active clamp
• E.S.D protection
• Input referenced to Vcc
• Over temperatue shutdown
• Reverse battery protection
IR3312(S)
Data Sheet No.PD60211 rev.D
Description
The IR 3312(S) is a Fully Protected 4 terminal high side switch.
The input signal is referenced to Vcc. When the input voltage
Vcc - Vin is higher than the specified Vih threshold, the output
power MOSFET is turned-on. When Vcc - Vin is lower than
the specified Vil threshold, the output MOSFET is turned-off.
A sense current proportional to the current in the power Mosfet
is sourced to the Ifb pin. Over-current shutdown occurs when
Vifb - Vin > 4.5 V. The current shutdown threshold is adjusted
by selecting the proper RIfb. Either over-current and over-tem-
perature latches off the switch. The device is reset by pulling
the input pin high. Other integrated protections ( ESD, reverse
battery, active clamp ) make the IR3312(S) very rugged and
suitable for the automotive environment.
Typical Connection
PROGRAMMABLE CURRENT SENSING HIGH SIDE SWITCH
Product Summary
R
ds(on)
20mΩ
V
cc.op.
6 to 28V
Current ratio 2800
I
shutdown
3 to 30A
Active clamp 35V
Load Dump 40V
Package
www.irf.com 1
VCC
OUT
IN
IR 3312
LOAD
Battery
Power
Ground
System
Ground
off
on
Ifb
10 k
RIfb
5 Lead TO220
IR3312
5 Lead
D
2
Pak (SMD220)
IR3312S
IR3312(S)
2 WWW.IRF.COM
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to Vcc lead. (T
Ambient
= 25
o
C unless otherwise specified).
1) Limited by junction temperature. Pulsed current is also limited by wiring
2) <500 Ohm or shorting Ifb to gnd may damage the part with Isd around 37A
3) >5000 Ohm or leaving Ifb open will shutdown the part. No current will flow in the load.
Symbol Parameter Min. Max. Units
V
cc -
V
in
max Maximum input voltage -16 50
V
cc-
V
Ifb
max Maximum Ifb voltage -0.3 50
Vcc - Vout max. Maximum output voltage -0.3 33
Ids cont. Diode max. permanent current (Rth = 60 °C/W) (1)
— 2.8
Ids1 cont Diode max. permanent current (Rth = 5 °C/W) (1)
—
25
Ids pulsed Diode max. pulsed current (1)
—
100
ESD 1 Electrostatic discharge ( human body model )C=100pF, R=1500Ω,
—
4
ESD 2 Electrostatic discharge (machine model)C=200pF,R=0Ω, L=10µH
—
0.5
Pd Power dissipation ( Rth = 60 °C/W )
—
2 W
TJ max. Max. storage and junction temperature -40 150 °C
Min RIfb Minimum resistor on the Ifb pin 0.3
—
kΩ
Ifb max Max. Ifb current -20 +20 mA
V
A
kV
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter Min. Max. Units
V
cc -
V
in
Continuous input voltage 6 28
V
cc -
V
Ifb
Continuous Ifb pin voltage 0.3 28
Vcc Supply to power ground voltage 6 28
Iout Continuous output current ( Rth/amb < 5 °C/W, Tj = 125°C)
— 14
Iout 85°C amb. Continuous output current ( Rth/amb < 60 °C/W, Tj = 125°C)
— 3.9
RIfb Ifb resistor to program Isd and scale (2 & 3) 0.5 3.5 kΩ
Pulse min. Minimum turn-on pulse width 1
—
ms
Fmax Maximum operating frequency
— 500
Fmax Prot. Maximum frequency with protections activated — 200
V
A
Hz
Thermal Characteristics
Symbol Parameter Typ. Max. Units
R
th
1
Thermal resistance junction to Ambient - TO220
60
—
R
th
2
Thermal resistance junction to case - TO220 0.7
—
R
th
1
Thermal resistance with standard footprint - SMD220
60
—
R
th
2 Thermal resistance with 1" square footprint - SMD220 35
—
R
th
3
Thermal resistance junction to case - SMD220 0.7 —
°C/W
IR3312(S)
WWW.IRF.COM 3
Symbol Parameter Min. Typ. Max. Units Test Conditions
Td
on
Turn-on delay time to Vcc-Vout= 0.9 Vcc
2
9
20
T
r1
Rise time to Vcc-Vout=5V 0.2 1 5
T
r2
Rise time to V
cc
-V
out
= 0.1V
cc
5
15
60
E
on
Turn ON energy
—
0.75
1.5
mJ
Td
off
Turn-off delay to V
cc
-V
out
= 0.1V
cc
5
14
60
T
f
Fall time to Vcc-Vout = 0.9 V
cc
2
7
25
E
off
Turn OFF energy
—
0.5
1
mJ
see figure 2
µs
see figure 3
µs
Switching Electrical Characteristics
V
cc
= 14V, Resistive Load = 0.4Ω, T
j
= 25
o
C, (unless otherwise specified).
4) Input thresholds are measured directly between the input pin and the tab. Any parasitic resistance in common between the load
current path and the input signal path can significantly affect the thresholds.
5) Rds(on) is measured between the Tab and the Out pin, 5mm away from the package.
Protection Characteristics
Tj
= 25
o
C (unless otherwise specified), RIfb = 500 to 5kOhm.
Symbol Parameter Min. Typ. Max. Units Test Conditions
VIfb -Vin
@ Isd Over-current shutdown threshold 4
4.5 5.4 V
Tsd Over-temp. shutdown threshold
—
165 —
°C see Fig. 7
Treset Protection reset time
—
50 300 µS
see Fig. 7
OV Over voltage shutdown (not latched)
33 36 41 V
Isdf Fixed over current shutdown 30 37 45 A VIfb<Vin
Isd_1k Adjustable over current shutdown 1K 9 12 16 A RIfb=1k
Min.Pulse Minimum pulse width (no WAIT state) 200 500 1200 µs see Fig. 6
WAIT WAIT function timer 0.5 1.2 3.5 ms see Figs. 6 and 7
Rev.Rds
on
Rds(on) reverse battery protection 10 16 28 mΩ Vcc-Vin=-12V, Iload=5A
Static Electrical Characteristics
(T
j
= 25
o
C, V
cc
= 14V unless otherwise specified.)
Vout=12V
V
mΩ
V
Symbol Parameter Min. Typ. Max. Units Test Conditions
Iq Total quiescent current (Iout +Ifb)
—
22 50
µ
A Vcc-Vin=0, Vcc-
Vcc-VIfb=12V
Iin Input current
1.5 4 6 mA
Vcc-Vin=14V
Vih High level input threshold voltage (4)
—5
5.5
Vil Low level input threshold voltage (4) 3.5 4 —
Vhys Input hysterisis = Vih-Vil 0.4 1 1.5
Iout qs Output quiescent current — 9 15 µA Vcc-Vin=0; Vcc-VIfb=0;
Vcc-Vout=12V
Rds1 on ON state resistance (5) 10 15 20 Iout=15A, Vcc-Vin=14V
Rds2 on ON state resistance (5) 10 16 28 I
out
=10A,
Vcc -Vin=6
V
Rds3 on ON state resistance (5) 20 28.5 38 I
out
=15A,
Tj = 150
o
C
Vclamp1 Vcc to Vout active clamp voltage 33 35
— Iout = 10mA
Vclamp2 Vcc to Vout active clamp voltage
—
36 40
Iout=30A,
Vcc-VIfb<20V
Vsd Body diode forward voltage — 0.85 1 Iout=5A
Vaval. Vcc to Vout avalanche voltage 40 43 50 Iout=100mA,Vcc-Vfb>
35V
P1-P3P4-P6P7-P9P10-P12P13-P13

IR3312S

Mfr. #:
Buy IR3312S
Manufacturer:
Infineon Technologies
Description:
IC SWITCH HI-SIDE 50V 2.8A D2PAK
Lifecycle:
New from this manufacturer.
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