NCP1361, NCP1366
www.onsemi.com
19
When the primary power MOSFET is turned on, the
primary current is illustrated by the green curve of
Figure 42. When the power MOSFET is turned off the
primary side current drops to zero and the current into the
secondary winding immediately rises to its peak value equal
to the primary peak current divided by the primary to
secondary turns ratio. This is an ideal situation in which the
leakage inductance action is neglected.
The output current delivered to the load is equal to the
average value of the secondary winding current, thus we can
write:
I
out
+t i
sec
(
t
)
u+
I
p,pk
2N
ps
t
demag
t
sw
(eq. 3)
Where:
t
sw
is the switching period
t
demag
is the demagnetizing time of the transformer
N
ps
is the secondary to primary turns ratio, where N
p
and N
s
are respectively the transformer primary and
secondary turns:
N
ps
+
N
s
N
p
(eq. 4)
I
p,pk
is the magnetizing peak current sensed across the
sense resistor on CS pin:
I
p,pk
+
V
CS
R
sense
(eq. 5)
Internal constant current regulation block is building the
constant current feedback information as follow:
V
FB_CC
+ V
ref_CC
t
sw
t
demag
(eq. 6)
As the controller monitors the primary peak current via the
sense resistor and due to the internal current setpoint divider
(K
comp
) between the CS pin and the internal feedback
information, the output current could be written as follow:
I
out
+
V
ref_CC
8N
ps
R
sense
(eq. 7)
The output current value is set by choosing the sense
resistor value:
R
sense
+
V
ref_CC
8N
ps
I
out
(eq. 8)
When the power MOSFET is released at the end of the on
time, because of the transformer leakage inductance and the
drain lumped capacitance some voltage ringing appears on
the drain node. These voltage ringings are also visible on the
auxiliary winding and could cheat the controller detection
circuits. To avoid false detection operations, two protecting
circuits have been implemented on the V
s
/ZCD pin (see
Figure 43):
1. An internal switch grounds the V
s
/ZCD pin during
t
on
+t
short_ZCD
in order to protect the pin from
negative voltage.
2. In order to prevent any misdetection from the zero
crossing block an internal switch disconnects
V
s
/ZCD pin until t
blank_ZCD
time (1.5 ms typ.)
ends.
NCP1361, NCP1366
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20
Figure 43. V
s
/ZCD Pin Waveforms
Constant−Current and Constant−Voltage Overall
Regulation:
As already presented in the two previous paragraphs, the
controller integrates two different feedback loops: the first
one deals with the constant−current regulation scheme while
the second one builds the constant−voltage regulation with
an opto−based voltage loop. One of the two feedback paths
sets the primary peak current into the transformer. During
startup phase, however, the peak current is controlled by the
soft−start.
Zero Current Detection
The NCP1361/66 integrates a quasi−resonant (QR)
flyback controller. The power switch turn−off of a QR
converter is determined by the peak current whose value
depends on the feedback loop. The switch restart event is
determined by the transformer demagnetization end. The
demagnetization end is detected by monitoring the
transformer auxiliary winding voltage. Turning on the
power switch once the transformer is demagnetized (or
reset) reduces turn−on switching losses. Once the
transformer is demagnetized, the drain voltage starts ringing
at a frequency determined by the transformer magnetizing
inductance and the drain lumped capacitance, eventually
settling at the input voltage value. A QR controller takes
advantage of the drain voltage ringing and turns on the
power switch at the drain voltage minimum or “valley” to
reduce turn−on switching losses and electromagnetic
interference (EMI).
As sketched by Figure 44, a valley is detected once the
ZCD pin voltage falls below the QR flyback
demagnetization threshold, V
ZCD(TH)
, typically 45 mV. The
controller will switch once the valley is detected or
increment the valley counter depending on FB voltage.
R
s1
R
s2
ZCD
Timeout
(t
outSS
or t
out
)
QR multi−mode
Valley lockout &
Valley Switching &
VCO management
Blanking
T
blank_ZCD
S
R
Q
DRV
(Internal)
V
ZCD(TH)
Figure 44. Valley Lockout Detection Circuitry internal Schematic
NCP1361, NCP1366
www.onsemi.com
21
Timeout
The ZCD block actually detects falling edges of the
auxiliary winding voltage applied to the ZCD pin. At
start−up or during other transient phases, the ZCD
comparator may be unable to detect such an event. Also, in
the case of extremely damped oscillations, the system may
not succeed in detecting all the valleys required by valley
lockout operation (VLO, see next section). In this condition,
the NCP1361/66 ensures continued operation by
incorporating a maximum timeout period that resets itself
when a demagnetization phase is properly detected. In case
the ringing signal is too weak or heavily damped, the timeout
signal supersedes the ZCD signal for the valley counter.
Figure 44 shows the timeout period generator circuit
schematic. The timeout duration, t
out
, is set to 5.5 ms (typ.).
During startup, the output voltage is still low, leading to
long demagnetization phase, difficult to detect since the
auxiliary winding voltage is small as well. In this condition,
the t
out
timeout is generally shorter than the inductor
demagnetization period and if used to restart a switching
cycle, it can cause continuous current mode (CCM)
operation for a few cycles until the voltage on the ZCD pin
is high enough for proper valleys detection. A longer
timeout period, t
outSS
, (typically 44 ms) is therefore set
during soft−start to prevent CCM operation.
In VLO operation, the timeout occurrences are counted
instead of valleys when the drain−source voltage
oscillations are too damped to be detected. For instance,
assume the circuit must turn on at the third valley and the
ZCD ringing only enables the detection of:
Valleys #1 to #2: the circuit generates a DRV pulse t
out
(steady−state timeout delay) after valley #2 detection.
Valley #1: the timeout delay must run twice so that the
circuit generates a DRV pulse 10 ms (2*t
out
typ.) after
valley #1 detection.
Valley LockOut (VLO) and Frequency Foldback (FF)
The operating frequency of a traditional Quasi−Resonant
(QR) flyback controller is inversely proportional to the
system load. In other words, a load reduction increases the
operating frequency. A maximum frequency clamp can be
useful to limit the operating frequency range. However,
when associated with a valley−switching circuit,
instabilities can arise because of the discrete frequency
jumps. The controller tends to hesitate between two valleys
and audible noise can be generated
To avoid this issue, the NCP1361/66 incorporates a
proprietary valley lockout circuitry which prevents
so−called valley jumping. Once a valley is selected, the
controller stays locked in this valley until the input level or
output power changes significantly. This technique extends
QR operation over a wider output power range while
maintaining good efficiency and naturally limiting the
maximum operating frequency.
The operating valley (from 1
st
to 4
th
valley) is determined
by the internal feedback level (FB node on Figure 4). As FB
voltage level decreases or increases, the valley comparators
toggle one after another to select the proper valley.
The decimal counter increases each time a valley is
detected. The activation of an “n” valley comparator blanks
the “n−1” or “n+1” valley comparator output depending if
V
FB
decreases or increases, respectively. Figure 45 shows a
typical frequency characteristic obtained at low line in a
10 W charger.
Figure 45. Typical Switching Frequency versus Output Power Relationship in a 10 W Adapter

NCP1361BABAYSNT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Switching Controllers LOW POWER OFFLINE CO
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