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RF601B2DTL

P1-P3P4-P4
RF601B2D
Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Fast recovery diodes
RF601B2D
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
General rectification
Features
1)Power mold type.(CPD)
2)Ultra Low V
F
3)Very fast recovery
4)Low switching loss Structure
Construction
Silicon epitaxial planer Structure
Taping dimensions (Unit : mm)
Absolute maximum ratings (Ta=25C)
Symbol Unit
V
RM
V
V
R
V
Io A
I
FSM
A
Tj
C
Tstg
C
Electrical characteristic (Ta=25°C)
Symbol Min. Typ. Max. Unit
Forward voltage
V
F
- 0.87 0.93 V
I
F
=3A
Reverse current
I
R
- 0.01 10
A
V
R
=200V
Reverse recovery time
trr - 14 25 ns
I
F
=0.5A,I
R
=1A,Irr=0.25*I
R
Thermal impedance
jc
--6
C/W
JUNCTION TO CASE
Storage temperature
55 to 150
(*1) Business frequencies, Rating of R-load, Tc=128C, 1/2 Io per diode
ConditionsParameter
Forward current surge peak (60Hz/1cyc) 40
Junction temperature 150
Parameter Limits
Reverse voltage (repetitive peak) 200
Reverse voltage (DC) 200
Average rectified forward current (*1) 6
CPD
1.
6
2.3
1.6
2.3
3.0 2.0 6.0
6.0
(1) (3)
(2)
1/3
2011.05 - Rev.F
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB601B2D
　
Electrical characteristic curves
0.001
0.01
0.1
1
10
0 100 200 300 400 500 600 700 800 900 1000
Ta=150C
Ta=125C
Ta=75
C
Ta=25C
Ta=-25
C
0
5
10
15
20
25
30
AVE:13.7ns
Ta=25°C
I
F
=0.5A
I
R
=1A
Irr=0.25*I
R
n=10pcs
0
10
20
30
40
50
60
70
80
90
100
1
10
100
1000
110100
8.3m
Ifsm
1cyc
8.3m
840
850
860
870
880
890
0.1
1
10
100
1000
10000
0 50 100 150 200
Ta=150
C
Ta=125C
Ta=75
C
Ta=25°C
Ta=-25C
z
50
60
70
80
90
100
110
120
130
140
150
AVE:99.4pF
Ta=25°C
f=1MHz
V
R
=0V
n=10pcs
0
50
100
150
200
250
300
AVE:126.0A
8.3m
Ifsm
1cyc
FORWARD VOLTAGE : V
F
(mV)
V
F
-I
F
CHARACTERISTICS
FORWARD CURRENT : I
F
(A)
REVERSE CURRENT:I
R
(nA)
REVERSE VOLTAGE : V
R
(V)
V
R
-I
R
CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:V
R
(V)
V
R
-Ct CHARACTERISTICS
V
F
DISPERSION MAP
FORWARD VOLTAGE:V
F
(mV)
REVERSE CURRENT:I
R
(nA)
I
R
DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
1
10
100
0 102030
f=1MHz
AVE:4.60nA
AVE:859.4mV
Ta=25°C
V
R
=0pcs
n=30pcs
Ta=25
C
I
F
=3A
n=30pcs
I
FSM
DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
trr DISPERSION MAP
REVERSE RECOVERY TIME:trr(ns)
2/3
2011.05 - Rev.F
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB601B2D
　
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
1ms
IM=100mA I
F
=3A
300us
tim
Mounted on a epoxy board
0
2
4
6
8
10
0246810
Sin(
=180)
D=1/2
DC
AMBIENT TEMPERATURE:Ta(
C)
DETATING CURVE
ﾞ
(Io-Ta)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
CASE TEMPARATURE:Tc(
C)
DETATING CURVE
ﾞ
(Io-Tc)
0
5
10
15
0 25 50 75 100 125 150
DC
D=1/2
Sin(180)
0
5
10
15
0 25 50 75 100 125 150
D=1/2
Sin(180)
DC
T
D=t/T
t
VR
Io
VR=100V
0A
0V
T
Tj=150
C
D=t/T
t
V
R
Io
V
R
=100V
0A
0V
0
5
10
15
20
25
30
No break at 30kV
C=100pF
R=1.5k
C=200pF
R=0
No break at 30kV
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
T
Tj=150C
D=t/T
t
V
R
Io
V
R
=100V
0A
0V
10
100
1000
110100
t
Ifsm
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
TIME:t(ms)
I
FSM
-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT
：
Io(A)
Io-Pf CHARACTERISTICS
3/3
2011.05 - Rev.F
P1-P3P4-P4

RF601B2DTL

Mfr. #:
Buy RF601B2DTL
Manufacturer:
ROHM Semiconductor
Description:
Rectifiers RECOMMENDED ALT 755-RF601BM2DTL
Lifecycle:
New from this manufacturer.
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