APT10021JFLL

050-7035 Rev C 4-2004
APT10021JFLL
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS) V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC) V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS) I
D
, DRAIN CURRENT (AMPERES)
I
DR
, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)
1 10 100 1000 0 10 20 30 40 50
0 100 200 300 400 500 600 0.3 0.5 0.7 0.9 1.1 1.3 1.5
148
100
50
10
1
16
12
8
4
0
1mS
100µS
T
C
=+25°C
T
J
=+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY R
DS
(ON)
V
DS
=500V
V
DS
=200V
V
DS
=800V
I
D
= 37A
T
J
=+150°C
T
J
=+25°C
C
rss
C
iss
C
oss
10mS
30,000
10,000
1,000
10
300
100
10
1
E
on
E
off
I
D
(A) I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT FIGURE 15, RISE AND FALL TIMES vs CURRENT
I
D
(A) R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD
= 667V
R
G
= 5
T
J
= 125°C
L = 100µH
E
on
E
off
t
r
t
f
SWITCHING ENERGY (µJ) t
d(on)
and t
d(off)
(ns)
SWITCHING ENERGY (µJ) t
r
and t
f
(ns)
5 10 15 20 25 30 35 40 45 50 55 60 5 10 15 20 25 30 35 40 45 50 55 60
5101520 2530354045505560 0 5 10 15 20 25 30 3540 45 50
V
DD
= 667V
I
D
= 37A
T
J
= 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
t
d(on)
t
d(off)
400
300
200
100
0
4000
3500
3000
2500
2000
1500
1000
500
0
V
DD
= 667V
R
G
= 5
T
J
= 125°C
L = 100µH
80
70
60
50
40
30
20
10
0
12,000
10,000
8,000
6,000
4,000
2,000
0
V
DD
= 667V
R
G
= 5
T
J
= 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
050-7035 Rev C 4-2004
Typical Performance Curves
APT10021JFLL
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
I
C
D.U.T.
APT30DF60
V
CE
Figure 20, Inductive Switching Test Circuit
V
DD
G
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
ISOTOP
®
is a Registered Trademark of SGS Thomson.
SOT-227 (ISOTOP
®
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
Drain Current
Drain Voltage
Gate Voltage
T
J
125°C
10%
0
t
d(off)
90%
t
f
Switching Energy
Drain Current
Drain Voltage
Gate Voltage
T
J
125°C
Switching Energy
10%
t
d(on)
90%
t
r
5%
10%
90%
5%

APT10021JFLL

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
Discrete Semiconductor Modules Power FREDFET - MOS7
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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